Thin-film heterostructures are necessary building blocks for superconducting and phononic quantum computing devices. Many new generations of quantum hardware demand extensive materials research to optimize performances at cryogenic temperatures (below 10 K). Here, we demonstrate compact cryogenic measurement systems capable of reaching sub-10K temperatures in less than three hours with the ability to measure AC/DC resistance and dielectric properties of thin-film materials. Our platform utilizes Gifford-McMahon (GM) cryocoolers as effective tools for providing high throughput cooling-warming cycles. We successfully used the GM-based measurement systems to measure 1) the superconducting transition temperature for Nb thin films (Tc ~7.8 K), and 2) the temperature dependence of the dielectric constant in SiO2 thin films down to 10 K. The fast electrical characterization feedback will be critical in developing robust materials and components for cryogenic computing devices.
Thin-film heterostructures are necessary building blocks for superconducting and phononic quantum computing devices. Many new generations of quantum hardware demand extensive materials research to optimize performances at cryogenic temperatures (below 10 K). Here, we demonstrate compact cryogenic measurement systems capable of reaching sub-10K temperatures in less than three hours with the ability to measure AC/DC resistance and dielectric properties of thin-film materials. Our platform utilizes Gifford-McMahon (GM) cryocoolers as effective tools for providing high throughput cooling-warming cycles. We successfully used the GM-based measurement systems to measure 1) the superconducting transition temperature for Nb thin films (Tc ~7.8 K), and 2) the temperature dependence of the dielectric constant in SiO2 thin films down to 10 K. The fast electrical characterization feedback will be critical in developing robust materials and components for cryogenic computing devices.
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work, we present a probe station that can be operated from room temperature down to below 2 K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization toward building scalable quantum circuits.
A noncontact cryogenic microwave measurement system has been developed for the characterization of passive and active superconducting devices by means of an unloaded quality factor measurement technique. The measurement system was designed specifically for the characterization of planar thin film resonant structures as a function of temperature (4–300 K), frequency (100 MHz–26.5 GHz), and dc voltage bias (≤100 V). It has been used for basic device studies of novel active superconducting lumped components made of metal-oxide superconductor/insulator heterostructures.
Rapid thermal cycling is a central bottleneck in the development of superconducting quantum devices: conventional dilution refrigerators require cooldowns of a day or more and substantial cryogenic infrastructure, which throttles the fabricate-measure-redesign loop. We present an ultracompact dilution refrigerator (3 kg in mass and 100 mm in diameter) that completes a full cooldown-warm-up cycle to a base temperature of 70 mK in 1.2 hours when unloaded, and in 2.1 hours when fully equipped with the microwave wiring required for qubit measurements, while delivering 20 microW of cooling power at 100 mK. We validate the platform through a complete characterization of a two-fluxonium device: we extract the full circuit Hamiltonian by two-tone spectroscopy, measure energy-relaxation and coherence times, and benchmark single-qubit control. Although the relaxation time is limited by the base temperature of the system, we reach a single-qubit gate fidelity of up to 99%, at the coherence limit set by our operating temperature. These results demonstrate that compact, fast-cycling dilution refrigeration can support state-of-the-art quantum-device characterization without sacrificing measurement quality, offering a practical route to high-throughput quantum-hardware development.
Low-temperature refrigerators cool systems down to cryogenic temperatures near absolute zero, where thermal noise and decoherence are suppressed. This allows quantum phases, such as superconductivity, to emerge in certain materials and enables the harnessing of individual quantum states for scientific and high-performance applications. However, the refrigerators used for these purposes are large and rely on cryoliquids, such as scarce and expensive 3He, which can be a limiting factor depending on the technological application. To enable more scalable, costeffective cryogenic platforms, new refrigeration technologies must be developed. To this end, chip-scale coolers based on superconducting tunnel junctions have been envisioned to provide a fully solid-state alternative. Proof-of-principle operation of these coolers has been demonstrated at temperatures below 1.5 K, but to link them with commercially available 4He pulse tube cryocoolers, stage operating above 2.0 K is required. Additionally, thermally isolating and electrically conducting methods are needed to cascade coolers operating at different temperature ranges. In this thesis, the fundamental components of a multi-stage chip-scale cooler operating at temperatures compatible with 4He pulse tube cryocoolers are developed. A superconducting flipchip assembly fabricated with In-bumps was characterized in the sub-kelvin temperature range, and the inter-chip thermal resistance was found to be suitable for chip-scale cooling applications. A through-chip signal routing method utilizing ALD TiN-based TSVs was developed, and the demonstrated critical temperature of 2.0 K enables dissipationless DC transport for multi-chip assemblies, such as cascaded coolers. Additionally, ALD MoCx was shown to exhibit a superconducting transition temperature up to 4.4 K and high conformality, showing promise as a TSV-compatible material. The key achievement of electronic cooling of Al thin film from a bath temperature of 2.4 K down to 1.6 K was demonstrated using Nb-based superconducting tunnel junctions, probed by an onchip junction thermometer. Thermal model calculations highlighted the emergence of superconductivity in the Al beneath the cooler junctions, persisting up to a bath temperature of 2.4 K: one kelvin higher than the nominal critical temperature of the Al thin film. The single-stage cooler operating above 2.0 K enables solid-state on-chip cooling from 4He pulse-tube compatible temperature without the use of magnetic fields. Additionally, Al- and V-based tunnel junctions were fabricated at the wafer scale using degenerately doped Si as the normal electrode. The junctions exhibited suitable low-temperature electrical characteristics for cooling applications. From superconducting interconnects to tunnel-junction components supporting high cooling power density above 1 K, the achievements presented in this thesis enable modular design of chip-scale cascade coolers. This technology is envisioned to support the scaling of several superconducting quantum devices from proof-of-principle to multi-component systems beyond experimental lab environments.
Integrated semiconductor circuits operating at cryogenic temperatures can play a crucial role in scaling quantum computing architectures based on trapped-ion and superconducting qubits. Other technologies, such as low-temperature detectors, can also benefit significantly from these circuits. These applications demand high-frequency, cryogenic temperature measurement systems for the thorough characterization of semiconductor components and circuits. This work presents a customizable, high-frequency, fast, and reliable cryogenic measurement setup for measurement temperatures ranging from room temperature to 4.2 K. It features up to two dc probes or two ground-signal-ground probes for frequencies of up to 67 GHz, which can be configured in a 180° or 90° configuration. In addition, up to 48 BeCu wires configured as twisted pairs provide supply and control signals. Furthermore, up to four rf connections can be mounted directly to a printed circuit board. The setup features an optical microscope in the vacuum chamber to position the probes, which is further utilized by a machine vision algorithm, allowing the detection of pads and automatic positioning of the probes over the pads. The hardware is located in a 550 × 500 × 500 mm3 large vacuum chamber with two independent pulse tube cryocoolers with cooling powers of up to 0.9 and 0.4 W at 4.2 K. Exemplary room temperature and cryogenic S-parameter, transient frequency (fT), time-domain, capacitance-voltage, and dc measurements of single transistors and integrated circuits fabricated by Infineon are presented, demonstrating the system's measurement capability for quantum computing and other applications.
Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.