A transmission line with TSVs was fabricated and characterized at room temperature and 10 mK. The extracted average loss per TSV is ~ 0.4 dB at 10mK within 4-6 GHz. That means TSVs can be used to carry microwave signals between the different chip surfaces in our future superconducting quantum processor. The frequency shift Δfrfor dense TSV resonator chip is much larger than for sparse TSV chip, which creates a method to optimize the resonator frequency.
A transmission line with TSVs was fabricated and characterized at room temperature and 10 mK. The extracted average loss per TSV is ~ 0.4 dB at 10mK within 4-6 GHz. That means TSVs can be used to carry microwave signals between the different chip surfaces in our future superconducting quantum processor. The frequency shift Δfrfor dense TSV resonator chip is much larger than for sparse TSV chip, which creates a method to optimize the resonator frequency.
Since superconducting quantum computers use microwave signals to control and readout their qubits, microwave transmission lines and circuits that can be used under cryogenic conditions are required. For microwave transmission lines, thermal insulation is essential to enhance wiring density and to prevent parasitic heating that can lead to increased computational errors. Thus, here we design and characterize a scalable, thermally insulated microwave transmission line. The transmission line designed for superconducting qubit readout at 5 GHz band achieves both thermal insulation and low loss, by employing resonator-based impedance matching in a microstripline structure. A flexible cable including eight planar transmission lines was designed, fabricated and characterized using S-parameter measurement, demonstrating low crosstalk below 40dB and signal attenuation of -23.5±0.07dB; this coincides with electromagnetic simulations. These microwave properties remained stable across a wide temperature range from room temperature down to 4 K, including steep gradients. The integration of chip attenuators further reduces thermal noise and protects sensitive cryogenic components. Our approach offers a promising solution for compact, high-density microwave wiring using flat cables under thermal gradients, necessary for large scale quantum computing.
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 μm wide by 20 μm long by 200 μm deep\textemdash with densities of 100 electrically isolated TSVs per square millimeter. We characterize the DC and microwave performance of superconducting TSVs at cryogenic temperatures and demonstrate superconducting critical currents greater than 20 mA. These high-aspect-ratio, high critical current superconducting TSVs will enable high-density vertical signal routing within superconducting quantum processors.
An advanced quantum processor requires millions of qubits but is at present limited in scalability due to limitations in the wiring of qubits. A 2.5D silicon (Si) interposer provides an attractive solution in enabling the scalability of the qubit devices. However, some qubits, like the superconducting qubits and solid-state spin-orbit qubits, operate in cryogenic temperatures below 1K. Copper (Cu) interconnects in conventional Si interposers are not superconductive in nature. As such, these metals contribute to losses and result in resistive heating, which can undesirably increase the temperature of the qubits during operation. This paper reports the full demonstration and electrical characterization of a cryogenic interposer with superconducting interconnects and TSV, using CMOS compatible materials like Aluminium (Al), Titanium (Ti), Titanium Nitride (TiN) and Tantalum (Ta).
Flexible interconnects with superconducting (SC) traces and polyimide dielectric can provide low signal loss and low thermal conductivity at cryogenic temperatures, and are expected to find use in densely integrated cryogenic electronics systems. The ultra-low loss of SC interconnects at microwave frequencies can be accurately characterized through the use of weakly coupled SC resonators. The high-quality factor resonators provide sensitive measurements of the aggregate loss properties of the conductor and dielectric, as functions of frequency, temperature, and signal power. In this work, resonators with different linewidths were fabricated and tested to study how the linewidth impacts the overall internal resonator loss, in order to better characterize and separate the individual loss components (i.e., dielectric loss vs. conductor loss). The results of this work are important for understanding loss and transmission properties of similarly designed and fabricated transmission line interconnects.
The development of superconducting quantum computing has seen a rapid acceleration in recent years. The number of controllable qubits fabricated on-chip has steadily increased in the pursuit of more computational power. 3D integration has become a key enabling technology for the scalability of these larger systems due to the architectural flexibility it offers, mirroring its impact on conventional electronics. As part of this development, superconducting throughsilicon vias (TSVs) have recently emerged as a method of breaking the wiring plane and routing signals through the substrate as well as for other, more novel, applications such as acting as the capacitive component of a new type of superconducting qubit. This thesis will discuss the simulation, fabrication and measurement of superconducting TSVs. Using ANSYS HFSS electromagnetic simulation software, the geometric parameters of TSV-integrated co-planar waveguides were optimised for the transmission of microwave signals. In addition, a TSV-integrated tunable qubit coupler was simulated and the effect of the device’s geometry on the various capacitances within the device, and in turn on the device’s parameters, such as the charging and Josephson energies, was investigated. As a leading cause of signal degradation in electronic devices, crosstalk should be removed from devices as far as possible. Varying the number and arrangement of grounding TSVs was explored as a strategy for the mitigation of crosstalk between adjacent TSVs and it was found that using 4 ground TSVs to shield the signal TSV resulted in a dramatic reduction in crosstalk, with values of S41 <−140dB at 4GHz. For the fabricated samples, a comparison was made of different Bosch etches used to define the TSVs and it was determined that the ICP power and total etch time were highly influential in the degree of sidewall roughness. Methods of sidewall smoothing were also investigated, with KOH wet etching found to offer near atomic-level smoothness. Finally, the fabricated samples were characterised using, among other methods, cryogenic spectroscopy. A novel application of the method of calibrated cryogenic S-parameter measurement to superconducting TSVs is also presented, with the TSV-integrated co-planar waveguide structure under test exhibiting a peak transmission of -1.44dB.
Abstract As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays—provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs—10 μm wide by 20 μm long by 200 μm deep—with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.