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Optical Fiber Communication Conference

An integrated photonic-electronic quantum coherent receiver for sub-shot-noise-limited optical links

Volkan Gurses, Debjit Sarkar, Samantha I. Davis, Ali Hajimiri

Published Jan 1, 2024• 3 citations
Publisher

Abstract

We demonstrate an integrated quantum-limited coherent receiver with co-packaged silicon photonics and electronics. The fully integrated receiver has 2.57 GHz bandwidth, 14.5 dB shot noise clearance, 587 µW knee power, and 2.7 × 0.8 mm2 footprint. With this system, we measure squeezed vacuum showing 0.156 ± 0.039 dB sub-shot-noise-level sensitivity.

DOI
10.1364/ofc.2024.tu2c.1

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We demonstrate an integrated quantum-limited coherent receiver with co-packaged silicon photonics and electronics. The fully integrated receiver has 2.57 GHz bandwidth, 14.5 dB shot noise clearance, 587 µW knee power, and 2.7 × 0.8 mm2 footprint. With this system, we measure squeezed vacuum showing 0.156 ± 0.039 dB sub-shot-noise-level sensitivity.
The Holevo limit bounds the channel capacity of a communication channel in which information is encoded in quantum states in a Hilbert space at the transmitter and decoded using quantum measurements at the receiver. Saturating the Holevo limit requires quantum-limited transceivers that either generate quantum states of light or employ quantum-limited measurements. Here, we demonstrate an integrated photonic-electronic quantum-limited coherent receiver (QRX) achieving 14.0 dB shot noise clearance (SNC), 520 μμμW knee power, 2.57 GHz 3-dB bandwidth, 3.50 GHz shot-noise-limited bandwidth, and 90.2 dB common-mode rejection ratio (CMRR\mathrm{CMRR}CMRR). We scale this design to a 32-channel QRX array with median 26.6 dB SNC\mathrm{SNC}SNC, and automatic CMRR\mathrm{CMRR}CMRR correction yielding a median 76.8 dB CMRR\mathrm{CMRR}CMRR at minimum. Using the integrated QRX and fiber-optic transmitter, we measure 0.15±0.010.15\pm0.010.15±0.01 dB of squeezing below the shot noise limit, limited by off-chip losses. We propose a squeezed light communication scheme that can surpass the Shannon limit, with a path toward the Holevo limit.
Optical homodyne detection is used in numerous quantum and classical applications that demand high levels of sensitivity. However, performance is typically limited due to the use of bulk optics and discrete receiver electronics. To address these performance issues, in this work we present a co-integrated balanced homodyne detector consisting of a silicon photonics optical front end and a custom integrated transimpedance amplifier designed in a 100 nm GaAs pHEMT technology. The high level of co-design and integration provides enhanced levels of stability, bandwidth, and noise performance. The presented detector shows a linear operation up to 28 dB quantum shot noise clearance and a high degree of common-mode rejection, at the same time achieving a shot-noise-limited bandwidth of more than 20 GHz. The high performance of the developed devices provide enhanced operation to many sensitive quantum applications such as continuous variable quantum key distribution, quantum random number generation, or high-speed quantum tomography.
The rapid development of continuous-variable quantum communication has driven an increasing demand for high-performance quantum signal processing modules. Among these, the balanced homodyne detector (BHD) has emerged as a leading solution for practical quantum state measurement due to its capability to provide complete quantum mechanical characterization. However, its performance is often constrained by limited bandwidth and high noise levels, primarily due to the reliance on bulk optical components and discrete receiver electronics. The dominant noise source in these systems typically stems from electronic noise, while imbalances in the optical path further degrade the signal-to-noise ratio (SNR) of the BHD. In this work, we present an adjustable integrated optical path to enhance the balance within the BHD system, along with a low-noise transimpedance amplifier (TIA) by employing optoelectronic co-design. Our design achieves a bandwidth of 2.5 GHz, an input-referred noise current of only 2 pA/√Hz in 180 nm CMOS technology, and a measured quantum shot noise clearance of 15 dB generated from a 700 μA photocurrent. This is the maximum quantum shot noise clearance at the same BHD photocurrent reported to date above the GHz bandwidth.
A low-noise, high-speed balanced homodyne detector is demonstrated, combining a capacitive-feedback transimpedance amplifier implemented in 28 nm CMOS with a custom photonic integrated circuit fabricated in imec's iSiPP200 silicon photonics platform. The receiver achieves a 3-dB bandwidth of 7.6 GHz, a maximum shot noise clearance of 27 dB, a shot noise-limited bandwidth of 13.7 GHz and a common-mode rejection ratio up to 54.8 dB. These results demonstrate the suitability of CMOS capacitive-feedback transimpedance amplifiers for demanding quantum and coherent sensing optical applications, including continuous-variable quantum key distribution, quantum random number generation, and optical coherence tomography.
Complimentary metal-oxide semiconductor (CMOS) integration of quantum technology provides a route to manufacture at volume, simplify assembly, reduce footprint, and increase performance. Quantum noise-limited homodyne detectors have applications across quantum technologies, and they comprise photonics and electronics. Here, we report a quantum noise-limited monolithic electronic-photonic integrated homodyne detector, with a footprint of 80 micrometers by 220 micrometers, fabricated in a 250-nanometer lithography bipolar CMOS process. We measure a 15.3-gigahertz 3-decibel bandwidth with a maximum shot noise clearance of 12 decibels and shot noise clearance out to 26.5 gigahertz, when measured with a 9-decibel-milliwatt power local oscillator. This performance is enabled by monolithic electronic-photonic integration, which goes below the capacitance limits of devices made up of separate integrated chips or discrete components. It exceeds the bandwidth of quantum detectors with macroscopic electronic interconnects, including wire and flip chip bonding. This demonstrates electronic-photonic integration enhancing quantum photonic device performance.