We propose SiN waveguide-based intrinsically spectrally-pure visible-telecom photon pair source with biphoton spectral purity of ∼92%. Such compact, on-chip sources could have applications in various quantum technologies such as sensing, simulation, computing, and communication.
Abstract Broadband frequency-correlated photon-pair sources could enable the realization of various quantum information technologies especially WDM-QKD (wavelength division multiplexed quantum key distribution) accommodating multiple users with enhanced data transmission rates. The wide transparency window, negligible nonlinear losses, and con- siderable refractive index contrast of silicon nitride (SiN) on insulator (SiO2) platform makes it an ideal material system for designing CMOS- compatible integrated photon sources based on spontaneous four-wave mixing (SFWM). We propose simple rectangular cross-section, few- cm long SiN waveguide designs capable of generating ultra-broadband frequency-correlated photon pairs via SFWM, exceeding an octave in bandwidth spanning the visible-to-telecom wavelengths (∼700-1700nm for ∼1-μm pump) with a spectral brightness of >2.5×104 photon pairs/s/nm/mW2. Such compact sources, spanning the entire telecom spectrum (across O, E, S, C, L, and U bands) on one side and cover- ing most of the major atomic transitions used in ultracold gases and solid-state based quantum memories on the other side, could poten- tially be employed in large-scale multi channel hybrid (free space + fiber) quantum networking schemes in addition to the heralding of telecom single photons by utilizing high efficiency visible detectors.
We propose silicon nitride (Si3N4) nanowaveguide-based CMOS-compatible integrated sources of spectrally pure visible-telecom photon pairs. Our designs are intrinsically devoid of spectral correlations, eradicating the need for narrow-band filtering that reduces the source brightness. Further, the signal photons lie in the visible--near-infrared (vis-NIR) band, which can provide increased heralding efficiency of the idler photon in the telecom band using high-efficiency single-photon detectors. For example, a rectangular-cross-section silica-clad Si3N4 nanowaveguide with dimensions $680\text{~nm}\ifmmode\times\else\texttimes\fi{}840\text{~nm}$ and length 7 cm provides a heralded single-photon purity of approximately $91\mathrm{%}$ for a pump wavelength of 956.8 nm and a pump bandwidth of 1200 GHz, with the signal and idler lying in the visible and telecom bands at approximately 701 nm and approximately 1505 nm, respectively, demonstrating a peak spectral brightness of approximately $1.2\ifmmode\times\else\texttimes\fi{}{10}^{4}$ photon pairs/s/nm/mW2 for a linear propagation loss of 0.5 dB/cm. The effect of propagation losses on the purity is also studied for such source designs. We also propose some designs capable of generating high-purity photon pairs to address various specific vis-NIR quantum memory transitions with telecom-band interfacing for long-distance hybrid quantum networks. Such compact on-chip sources could have potential applications in various quantum technologies, such as sensing, simulation, computing, communication, and networking.
We propose integrated photonic sources based on spontaneous four-wave mixing (SFWM) in dispersion engineered silicon nitride (SiN) nanowaveguides capable of generating spectrally-pure polarization-entangled photon-pairs bridging the visible-NIR and telecom bands. A simple silica-clad SiN waveguide design with height 640 nm and width in the range 860–960 nm can generate polarization-entangled photon pairs that simultaneously offers high heralded single photon purity of$>99\sim736–740nmand\sim1460–1560nm,respectively,employingapulsedpump(BW\gtrsim0.25–3THz)ofwavelengthnear\sim1−\mum.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsof\sim$775–800 nm with a telecom band interface. Such CMOS-compatible on-chip sources of spectrally-pure polarization-entangled photon pairs can potentially be employed in a scalable manner for various optical quantum technologies.
Photon pair sources are fundamental building blocks for quantum entanglement and quantum communication. Recent studies in silicon photonics have documented promising characteristics for photon pair sources within the telecommunications band, including sub-milliwatt optical pump power, high spectral brightness, and high photon purity. However, most quantum systems suitable for local operation (e.g., storage/computation) support optical transitions in the visible or short nearinfrared bands. In comparison to telecommunications wavelengths, the significantly higher optical attenuation in silica at such wavelengths limits the length scale over which optical-fiber-based quantum communication between such local nodes can take place. One approach to connect such systems over fiber is through a photon pair source that can bridge the visible and telecom bands, but an appropriate source, which should produce narrow-band photon pairs with a high signal-to-noise ratio, has not yet been developed in an integrated platform. Here, we demonstrate a nanophotonic visible-telecom photon pair source for the first time, using high quality factor silicon nitride resonators to generate narrow-band photon pairs with unprecedented purity and brightness, with coincidence-toaccidental ratio (CAR) up to 3,780 ± 140 and detected photon-pair flux up to (18,400 ± 1,000) pairs/s. We further demonstrate visible-telecom time-energy entanglement and its distribution over a 20 km fiber, far exceeding the fiber length over which purely visible wavelength quantum light sources can be transmitted. Finally, we show how dispersion engineering of the microresonators enables the connections of different species of trapped atoms/ions, defect centers, and quantum dots to the telecommunications bands for future quantum communication systems.