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Optical and Quantum Electronics

SiN waveguides for ultra-broadband visible-telecom photon pairs

Vijay, Shivani Sharma, Vivek Venkataraman, Joyee Ghosh

Published May 11, 2023• 5 citations
Publisher

Abstract

Abstract Broadband frequency-correlated photon-pair sources could enable the realization of various quantum information technologies especially WDM-QKD (wavelength division multiplexed quantum key distribution) accommodating multiple users with enhanced data transmission rates. The wide transparency window, negligible nonlinear losses, and con- siderable refractive index contrast of silicon nitride (SiN) on insulator (SiO2) platform makes it an ideal material system for designing CMOS- compatible integrated photon sources based on spontaneous four-wave mixing (SFWM). We propose simple rectangular cross-section, few- cm long SiN waveguide designs capable of generating ultra-broadband frequency-correlated photon pairs via SFWM, exceeding an octave in bandwidth spanning the visible-to-telecom wavelengths (∼700-1700nm for ∼1-μm pump) with a spectral brightness of >2.5×104 photon pairs/s/nm/mW2. Such compact sources, spanning the entire telecom spectrum (across O, E, S, C, L, and U bands) on one side and cover- ing most of the major atomic transitions used in ultracold gases and solid-state based quantum memories on the other side, could poten- tially be employed in large-scale multi channel hybrid (free space + fiber) quantum networking schemes in addition to the heralding of telecom single photons by utilizing high efficiency visible detectors.

DOI
10.1007/s11082-023-04857-y

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Correlated photon pair generation based on spontaneous four-wave-mixing in ultra-silicon-rich nitride waveguides (Conference Presentation)

Ju Won Choi, Byoung‐Uk Sohn, George F. R. Chen +2 more

Correlated single photons provide a means to drive applications such as quantum computing and quantum communications. Correlated single photons can be generated via parametric down conversion in second–order nonlinear media or spontaneous four–wave mixing in third–order nonlinear media. In particular, complementary metal–oxide–semiconductor (CMOS) technology allows for seamless integration with electronics, providing the potential for a completely on-chip solution for quantum information processing. Ultra–silicon–rich nitride platform is a backend CMOS compatible platform, that has already been used to obtain high gain optical parametric amplification, wideband supercontinuum and enhanced nonlinearity in photonic crystal waveguides due to its large nonlinearity. In this work, we demonstrate correlated photon pair generation based on spontaneous four–wave mixing using ultra-silicon-rich nitride waveguides for the application in CMOS–based optical quantum technologies. A CW pump at a wavelength of 1555.747nm amplified using an EDFA is filtered through five wavelength division multiplexers (WDM) with a bandwidth of 1.2nm, providing 175dB suppression of EDFA induced pump sideband noise. The filtered quasi–TE pump, adjusted using a fiber polarization controller, is coupled into an ultra–silicon–rich nitride waveguide using a lensed fiber. A SiO2 cladded waveguide with a width of 550nm and height of 300nm possesses a high nonlinear parameter of 530W^-1/m with anomalous dispersion necessary for spontaneous four-wave mixing. The waveguide output is coupled into a lensed fiber and 7 cascaded WDMs are used to provide 245dB of residual pump filtration. The pump–suppressed output is spectrally separated into signal/idler part using WDMs. We refer to lower (higher) frequency photon as the signal (idler). The spontaneously generated signal and idler photons are filtered using cascaded tunable band pass filters (OTF) centered at 1571.24nm and cascaded WDMs centered at 1540.56nm, respectively. The bandwidth of the tunable OTF and WDM is 0.5nm and 1.2nm, therefore the correlated signal/idler photons are observed within the bandwidth window of 0.5nm induced by the OTF. The signal and idler photons are measured using InGaAs/InP avalanche photodetectors. The time correlation between signal and idler photons is obtained using a time interval analyzer with a detection efficiency of 20% and dead time of 15μs.The time bin is set to 81ps and the photon collection time is 240s. The coincidence peak is located ~11ns in the time–bin histogram due to the optical-path difference between the tunable OTF and WDM at respective signal and idler sides. The experimental raw coincidence counts (Hz), calculated by subtracting the accidental rate from the coincidence peak, show a quadratic increase with respect to coupled pump power. At the maximum coupled power of 5mW, the raw coincidence count is ~1Hz. We achieve a raw coincidence–to–accidental ratio (CAR) of up to 3. Therefore, we succeeded to observe correlated photon pair generation based on spontaneous four–wave mixing using the ultra–silicon–rich-nitride waveguide as a CMOS compatible platform, for future applications in quantum technologies.

SPIE Conference on Nonlinear Optics and its Applications•May 23, 2018•0 citations
Abstract Broadband frequency-correlated photon-pair sources could enable the realization of various quantum information technologies especially WDM-QKD (wavelength division multiplexed quantum key distribution) accommodating multiple users with enhanced data transmission rates. The wide transparency window, negligible nonlinear losses, and con- siderable refractive index contrast of silicon nitride (SiN) on insulator (SiO2) platform makes it an ideal material system for designing CMOS- compatible integrated photon sources based on spontaneous four-wave mixing (SFWM). We propose simple rectangular cross-section, few- cm long SiN waveguide designs capable of generating ultra-broadband frequency-correlated photon pairs via SFWM, exceeding an octave in bandwidth spanning the visible-to-telecom wavelengths (∼700-1700nm for ∼1-μm pump) with a spectral brightness of >2.5×104 photon pairs/s/nm/mW2. Such compact sources, spanning the entire telecom spectrum (across O, E, S, C, L, and U bands) on one side and cover- ing most of the major atomic transitions used in ultracold gases and solid-state based quantum memories on the other side, could poten- tially be employed in large-scale multi channel hybrid (free space + fiber) quantum networking schemes in addition to the heralding of telecom single photons by utilizing high efficiency visible detectors.
We propose integrated photonic sources based on spontaneous four-wave mixing (SFWM) in dispersion engineered silicon nitride (SiN) nanowaveguides capable of generating spectrally-pure polarization-entangled photon-pairs bridging the visible-NIR and telecom bands. A simple silica-clad SiN waveguide design with height 640 nm and width in the range 860–960 nm can generate polarization-entangled photon pairs that simultaneously offers high heralded single photon purity of$>9999% and concurrence upto 0.99, with signal and idler lying in the range99\sim736–740nmand736–740 nm and736–740nmand\sim1460–1560nm,respectively,employingapulsedpump(BW1460–1560 nm, respectively, employing a pulsed pump (BW1460–1560nm,respectively,employingapulsedpump(BW\gtrsim0.25–3THz)ofwavelengthnear0.25–3 THz) of wavelength near0.25–3THz)ofwavelengthnear\sim1−1-1−\mum.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsofm. Slightly different waveguide height of 620 nm and corresponding waveguide widths in the range 1040–1180 nm, offering the same purity and concurrence standards, can also address various quantum memories demonstrated at the visible-NIR wavelengths ofm.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsof\sim$775–800 nm with a telecom band interface. Such CMOS-compatible on-chip sources of spectrally-pure polarization-entangled photon pairs can potentially be employed in a scalable manner for various optical quantum technologies.
We propose silicon nitride (Si3N4\mathrm{S}{\mathrm{i}}_{3}{\mathrm{N}}_{4}Si3​N4​) nanowaveguide-based CMOS-compatible integrated sources of spectrally pure visible-telecom photon pairs. Our designs are intrinsically devoid of spectral correlations, eradicating the need for narrow-band filtering that reduces the source brightness. Further, the signal photons lie in the visible--near-infrared (vis-NIR) band, which can provide increased heralding efficiency of the idler photon in the telecom band using high-efficiency single-photon detectors. For example, a rectangular-cross-section silica-clad Si3N4\mathrm{S}{\mathrm{i}}_{3}{\mathrm{N}}_{4}Si3​N4​ nanowaveguide with dimensions $680\text{~nm}\ifmmode\times\else\texttimes\fi{}840\text{~nm}$ and length 7 cm provides a heralded single-photon purity of approximately $91\mathrm{%}$ for a pump wavelength of 956.8 nm and a pump bandwidth of 1200 GHz, with the signal and idler lying in the visible and telecom bands at approximately 701701701 nm and approximately 150515051505 nm, respectively, demonstrating a peak spectral brightness of approximately $1.2\ifmmode\times\else\texttimes\fi{}{10}^{4}$ photon pairs/s/nm/mW2\mathrm{pairs}/\mathrm{s}/\mathrm{nm}/{\mathrm{mW}}^{2}pairs/s/nm/mW2 for a linear propagation loss of 0.5 dB/cm. The effect of propagation losses on the purity is also studied for such source designs. We also propose some designs capable of generating high-purity photon pairs to address various specific vis-NIR quantum memory transitions with telecom-band interfacing for long-distance hybrid quantum networks. Such compact on-chip sources could have potential applications in various quantum technologies, such as sensing, simulation, computing, communication, and networking.
We demonstrate theoretically the direct (filter-free) generation of spectrally uncorrelated photon pairs, and consequently high-purity heralded single photons at telecommunication wavelengths, in SOI (silicon-on-insulator) nanowaveguides via spontaneous four-wave mixing (SFWM). The inherent strong waveguide dispersion in such high-index contrast structures is employed for discrete-band phase-matching in order to suppress the pair spectral correlations, and to produce photons in the fundamental spatial mode for easy in-out coupling to single-mode optical fibers. Additionally, by optimizing the source parameters like waveguide length, dispersion and pump bandwidth, the group-velocity of generated photons is also engineered to further eliminate spectral correlations. Extensive numerical mode simulations for various waveguide widths are used to design intrinsically pure photon sources via joint spectral amplitude (JSA) engineering. Purity$>9595% is shown to be achievable in a silica-clad SOI waveguide with a cross-section 220 × 600 nm95^{2}fortypicalvaluesoflengthandpumpbandwidth.Thewavelengthoftheseheraldedsinglephotonscanbetunedintherangeof1266–1363nm(for typical values of length and pump bandwidth. The wavelength of these heralded single photons can be tuned in the range of 1266–1363 nm (fortypicalvaluesoflengthandpumpbandwidth.Thewavelengthoftheseheraldedsinglephotonscanbetunedintherangeof1266–1363nm(\sim$O-band) by varying the pump wavelength. Considering the high accuracy provided by silicon nanofabrication techniques, the feasibility of generating single photons across the wavelength range 1333–1425 nm (E-band) and 1437–1510 nm (S-band) for slightly different waveguide widths (625 nm & 650 nm) is also demonstrated. These filter-free integrated photon sources could be important for large-scale linear optical quantum computation (LOQC) and long-distance fiber-optic quantum key distribution (QKD) networks.
Sources of quantum correlated photons pairs bridging the 3um-4um Mid-infrared (MIR) band and Telecom/Near-Infrared/Visible band are of high importance for quantum technologies. Spontaneous Parametric Down Conversion is generally used for realizing such sources, but requires costly implementation platforms with reduced versatility. Here, we explore the potentialities of Spontaneous Four-Wave Mixing (SFWM) in all-solid Silicon On Insulator (SOI) waveguides thanks to an experimentally validated model and propose designs ensuring the production of correlated photon pairs bridging the 3um-4um Mid-infrared band and Telecom C-band. Choosing a pump with a wavelength in the range 2100nm-2210nm and a pulse duration of 5ps, we quantitatively performed simulations targeting a probability of photon pair generation per pulse of 0.05, and we found realistic conditions of utilization (2cm-length straight waveguides, intra-modal Four Wave Mixing with the fundamental TE00 mode) with a pump peak power in between 9.2mW and 32mW. A first design (wCOM) reaches a signal wavelength as high as 3.905um, which is situated in an atmospheric transparency window, while maintaining an idler in the Telecom C-band, making it of high interest for atmospheric Quantum Key Distribution. Two other designs wCH4 and wNO2 aim precise CH4 and NO2 gas sensing with a signal wavelength of 3265nm and 3461nm respectively. In terms of signal/idler wavelength separation, wCOM attains the value of 2364nm which is well above the current record of ~1125nm obtained in quantum regime with SFWM in all-solid SOI waveguides.
Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present what is believed to be the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of complementary metal-oxide-semiconductor (CMOS)-compatible devices in quantum networks.
Correlated single photons provide a means to drive applications such as quantum computing and quantum communications. Correlated single photons can be generated via parametric down conversion in second–order nonlinear media or spontaneous four–wave mixing in third–order nonlinear media. In particular, complementary metal–oxide–semiconductor (CMOS) technology allows for seamless integration with electronics, providing the potential for a completely on-chip solution for quantum information processing. Ultra–silicon–rich nitride platform is a backend CMOS compatible platform, that has already been used to obtain high gain optical parametric amplification, wideband supercontinuum and enhanced nonlinearity in photonic crystal waveguides due to its large nonlinearity. In this work, we demonstrate correlated photon pair generation based on spontaneous four–wave mixing using ultra-silicon-rich nitride waveguides for the application in CMOS–based optical quantum technologies. A CW pump at a wavelength of 1555.747nm amplified using an EDFA is filtered through five wavelength division multiplexers (WDM) with a bandwidth of 1.2nm, providing 175dB suppression of EDFA induced pump sideband noise. The filtered quasi–TE pump, adjusted using a fiber polarization controller, is coupled into an ultra–silicon–rich nitride waveguide using a lensed fiber. A SiO2 cladded waveguide with a width of 550nm and height of 300nm possesses a high nonlinear parameter of 530W^-1/m with anomalous dispersion necessary for spontaneous four-wave mixing. The waveguide output is coupled into a lensed fiber and 7 cascaded WDMs are used to provide 245dB of residual pump filtration. The pump–suppressed output is spectrally separated into signal/idler part using WDMs. We refer to lower (higher) frequency photon as the signal (idler). The spontaneously generated signal and idler photons are filtered using cascaded tunable band pass filters (OTF) centered at 1571.24nm and cascaded WDMs centered at 1540.56nm, respectively. The bandwidth of the tunable OTF and WDM is 0.5nm and 1.2nm, therefore the correlated signal/idler photons are observed within the bandwidth window of 0.5nm induced by the OTF. The signal and idler photons are measured using InGaAs/InP avalanche photodetectors. The time correlation between signal and idler photons is obtained using a time interval analyzer with a detection efficiency of 20% and dead time of 15μs.The time bin is set to 81ps and the photon collection time is 240s. The coincidence peak is located ~11ns in the time–bin histogram due to the optical-path difference between the tunable OTF and WDM at respective signal and idler sides. The experimental raw coincidence counts (Hz), calculated by subtracting the accidental rate from the coincidence peak, show a quadratic increase with respect to coupled pump power. At the maximum coupled power of 5mW, the raw coincidence count is ~1Hz. We achieve a raw coincidence–to–accidental ratio (CAR) of up to 3. Therefore, we succeeded to observe correlated photon pair generation based on spontaneous four–wave mixing using the ultra–silicon–rich-nitride waveguide as a CMOS compatible platform, for future applications in quantum technologies.