We propose integrated photonic sources based on spontaneous four-wave mixing (SFWM) in dispersion engineered silicon nitride (SiN) nanowaveguides capable of generating spectrally-pure polarization-entangled photon-pairs bridging the visible-NIR and telecom bands. A simple silica-clad SiN waveguide design with height 640 nm and width in the range 860–960 nm can generate polarization-entangled photon pairs that simultaneously offers high heralded single photon purity of$>
99\sim
736–740nmand\sim
1460–1560nm,respectively,employingapulsedpump(BW\gtrsim
0.25–3THz)ofwavelengthnear\sim
1−\mu
m.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsof\sim$775–800 nm with a telecom band interface. Such CMOS-compatible on-chip sources of spectrally-pure polarization-entangled photon pairs can potentially be employed in a scalable manner for various optical quantum technologies.
We propose silicon nitride (
Si3N4) nanowaveguide-based CMOS-compatible integrated sources of spectrally pure visible-telecom photon pairs. Our designs are intrinsically devoid of spectral correlations, eradicating the need for narrow-band filtering that reduces the source brightness. Further, the signal photons lie in the visible--near-infrared (vis-NIR) band, which can provide increased heralding efficiency of the idler photon in the telecom band using high-efficiency single-photon detectors. For example, a rectangular-cross-section silica-clad
Si3N4 nanowaveguide with dimensions $680\text{~nm}\ifmmode\times\else\texttimes\fi{}840\text{~nm}$ and length 7 cm provides a heralded single-photon purity of approximately $91\mathrm{%}$ for a pump wavelength of 956.8 nm and a pump bandwidth of 1200 GHz, with the signal and idler lying in the visible and telecom bands at approximately
701 nm and approximately
1505 nm, respectively, demonstrating a peak spectral brightness of approximately $1.2\ifmmode\times\else\texttimes\fi{}{10}^{4}$ photon
pairs/s/nm/mW2 for a linear propagation loss of 0.5 dB/cm. The effect of propagation losses on the purity is also studied for such source designs. We also propose some designs capable of generating high-purity photon pairs to address various specific vis-NIR quantum memory transitions with telecom-band interfacing for long-distance hybrid quantum networks. Such compact on-chip sources could have potential applications in various quantum technologies, such as sensing, simulation, computing, communication, and networking.
Abstract Broadband frequency-correlated photon-pair sources could enable the realization of various quantum information technologies especially WDM-QKD (wavelength division multiplexed quantum key distribution) accommodating multiple users with enhanced data transmission rates. The wide transparency window, negligible nonlinear losses, and con- siderable refractive index contrast of silicon nitride (SiN) on insulator (SiO2) platform makes it an ideal material system for designing CMOS- compatible integrated photon sources based on spontaneous four-wave mixing (SFWM). We propose simple rectangular cross-section, few- cm long SiN waveguide designs capable of generating ultra-broadband frequency-correlated photon pairs via SFWM, exceeding an octave in bandwidth spanning the visible-to-telecom wavelengths (∼700-1700nm for ∼1-μm pump) with a spectral brightness of >2.5×104 photon pairs/s/nm/mW2. Such compact sources, spanning the entire telecom spectrum (across O, E, S, C, L, and U bands) on one side and cover- ing most of the major atomic transitions used in ultracold gases and solid-state based quantum memories on the other side, could poten- tially be employed in large-scale multi channel hybrid (free space + fiber) quantum networking schemes in addition to the heralding of telecom single photons by utilizing high efficiency visible detectors.
Developing a high-quality, bright source of polarization-entangled photon pairs on CMOS-compatible integrated platforms, such as silicon or silicon nitride, remains a significant challenge. Here, a novel silicon chip-based nonlinear Sagnac interferometer, which mainly integrates a bidirectionally pumped microring resonator with a polarization-splitting rotator, was proposed to generate polarization-entangled photon pairs. By pumping the system with a pulsed laser at 1550 nm and a power of 78 μW, polarization-entangled photon pairs in the telecom C-band were produced through spontaneous four-wave mixing, achieving a state-of-the-art brightness of 1.6 × 107 pairs s−1 GHz−1 mW−2. Using an off-chip polarization analyzer, the visibility of polarization-correlation interference fringe was measured to be 96.6%. Quantum state tomography revealed a fidelity of 0.958 for the maximally entangled state produced by the source. These exceptional performance metrics, combined with the integrability of the device, make it highly suitable for advanced quantum applications, particularly in multi-user entanglement-based quantum communication networks.
We report on a source of ultranarrow-band photon pairs generated by widely nondegenerate cavity-enhanced spontaneous down-conversion. The source is designed to be compatible with Pr(3+) solid state quantum memories and telecommunication optical fibers, with signal and idler photons close to 606 nm and 1436 nm, respectively. Both photons have a spectral bandwidth around 2 MHz, matching the bandwidth of Pr(3+) doped quantum memories. This source is ideally suited for long distance quantum communication architectures involving solid state quantum memories.