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IEEE International Conference on Quantum Computing and Engineering (QCE)

Demonstration of a micro-fabricated Penning trap for quantum computing

Tobias Sägesser, Shreyans Jain, Pavel Hrmo, Daniel Kienzler, Jonathan Home

Published Sep 17, 2023• 0 citations
Publisher

Abstract

Trapped-ion quantum information processors are among the leading candidates to realise large-scale quantum computing. In trying to scale the number of confined ions in radio-frequency (rf) traps, several challenges arise due to the use of the rf fields. Ion placement is restricted to the vicinity of the rf null in order to minimise excess micromotion. Miniaturisation of trap geometries is desirable for increased ion density, but is at odds with the need to deliver high-voltage rf and tolerate the resulting power dissipation. We demonstrate a platform based on Penning traps, where ions are radially confined using a strong magnetic field. Static electric fields are then sufficient to provide confinement along the axis. We confine a single9Be + ion in a 3 T magnetic field using a micro-fabricated trap and realise transport to arbitrary positions above the trap chip. Furthermore, we show full quantum control of the spin and motion of the trapped ion. Ground state cooling of all motional modes is achieved and we measure the rate of motional heating due to electric field noise in the absence of an rf drive, obtaining noise levels below those observed in similar rf traps. Since only static fields are required for ion confinement, we can temporarily electrically isolate the trap electrodes from technical noise using switches, further reducing the observed electric field noise.

DOI
10.1109/qce57702.2023.10283

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Trapped-ion quantum information processors are among the leading candidates to realise large-scale quantum computing. In trying to scale the number of confined ions in radio-frequency (rf) traps, several challenges arise due to the use of the rf fields. Ion placement is restricted to the vicinity of the rf null in order to minimise excess micromotion. Miniaturisation of trap geometries is desirable for increased ion density, but is at odds with the need to deliver high-voltage rf and tolerate the resulting power dissipation. We demonstrate a platform based on Penning traps, where ions are radially confined using a strong magnetic field. Static electric fields are then sufficient to provide confinement along the axis. We confine a single9Be + ion in a 3 T magnetic field using a micro-fabricated trap and realise transport to arbitrary positions above the trap chip. Furthermore, we show full quantum control of the spin and motion of the trapped ion. Ground state cooling of all motional modes is achieved and we measure the rate of motional heating due to electric field noise in the absence of an rf drive, obtaining noise levels below those observed in similar rf traps. Since only static fields are required for ion confinement, we can temporarily electrically isolate the trap electrodes from technical noise using switches, further reducing the observed electric field noise.
Abstract Trapped ions in radio-frequency traps are among the leading approaches for realizing quantum computers, because of high-fidelity quantum gates and long coherence times1–3. However, the use of radio-frequencies presents several challenges to scaling, including requiring compatibility of chips with high voltages4, managing power dissipation5 and restricting transport and placement of ions6. Here we realize a micro-fabricated Penning ion trap that removes these restrictions by replacing the radio-frequency field with a 3 T magnetic field. We demonstrate full quantum control of an ion in this setting, as well as the ability to transport the ion arbitrarily in the trapping plane above the chip. This unique feature of the Penning micro-trap approach opens up a modification of the quantum charge-coupled device architecture with improved connectivity and flexibility, facilitating the realization of large-scale trapped-ion quantum computing, quantum simulation and quantum sensing.
We propose the use of two-dimensional Penning trap arrays as a scalable platform for quantum simulation and quantum computing with trapped atomic ions. This approach involves placing arrays of microstructured electrodes defining static electric quadrupole sites in a magnetic field, with single ions trapped at each site and coupled to neighbors via the Coulomb interaction. We solve for the normal modes of ion motion in such arrays and derive a generalized multi-ion invariance theorem for stable motion even in the presence of trap imperfections. We use these techniques to investigate the feasibility of quantum simulation and quantum computation in fixed ion lattices. In homogeneous arrays, we show that sufficiently dense arrays are achievable, with axial, magnetron, and cyclotron motions exhibiting interion dipolar coupling with rates significantly higher than expected decoherence. With the addition of laser fields, these can realize tunable-range interacting spin Hamiltonians. We also show how local control of potentials allows isolation of small numbers of ions in a fixed array and can be used to implement high-fidelity gates. The use of static trapping fields means that our approach is not limited by power requirements as the system size increases, removing a major challenge for scaling which is present in standard radio-frequency traps. Thus, the architecture and methods provided here appear to open a path for trapped-ion quantum computing to reach fault-tolerant scale devices.
We propose the use of two-dimensional Penning trap arrays as a scalable platform for quantum simulation and quantum computing with trapped atomic ions.This approach involves placing arrays of microstructured electrodes defining static electric quadrupole sites in a magnetic field, with single ions trapped at each site and coupled to neighbors via the Coulomb interaction.We solve for the normal modes of ion motion in such arrays and derive a generalized multi-ion invariance theorem for stable motion even in the presence of trap imperfections.We use these techniques to investigate the feasibility of quantum simulation and quantum computation in fixed ion lattices.In homogeneous arrays, we show that sufficiently dense arrays are achievable, with axial, magnetron, and cyclotron motions exhibiting interion dipolar coupling with rates significantly higher than expected decoherence.With the addition of laser fields, these can realize tunable-range interacting spin Hamiltonians.We also show how local control of potentials allows isolation of small numbers of ions in a fixed array and can be used to implement highfidelity gates.The use of static trapping fields means that our approach is not limited by power requirements as the system size increases, removing a major challenge for scaling which is present in standard radio-frequency traps.Thus, the architecture and methods provided here appear to open a path for trapped-ion quantum computing to reach fault-tolerant scale devices.
We discuss the potential of the Penning ion trap for quantum information processing. An ion plasma in a Penning trap rotates about the trap (or magnetic field) axis. We have demonstrated phase-locked control of this rotation by a rotating electric field perturbation (a “rotating wall”). This precise control enables the formation of planar arrays of ions that could potentially be used for quantum computation with the Cirac-Zoller scheme, mimicking a “hard disk” geometry. Current experiments with miniature rf traps observe significant heating and decoherence which is believed to be due to fluctuating patch fields on the trap electrodes. This heating should be several orders of magnitude less in the larger Penning trap.
We introduce an ion trap platform based on a 3D-printed micro-junction array, designed to implement quantum charge-coupled device (QCCD) architectures for large-scale quantum information processing (QIP). The integration of three-dimensionally structured micro Radio-Frequency (RF) electrodes above a surface-electrode trap enables flexible control of electric field profiles across both linear and junction regions. Through simulations, we demonstrate that the linear region exhibits deeper and more harmonic ion confinement with reduced RF drive power compared to conventional planar traps. Crucially, we identify a junction geometry that maintains uniform ion confinement during transport while substantially reducing the pseudopotential barrier. This reduction facilitates low-heating, high-fidelity transport of single- and multi-species ion crystals. Our results establish a viable route toward fault-tolerant quantum computing by enabling modular and scalable QCCD systems based on the state-of-the-art 3D-printing technologies.
Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40Ca+ ions. The similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.