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Radiation and Scattering of Electromagnetic Waves (RSEMW)

Superconducting Integrated Microcircuits Based on NbTiN/Al Transmission Lines Operating at Frequencies Above 1 THz

Nickolay V. Kinev, Artem M. Chekushkin, Fedor V. Khan, V. P. Koshelets

Published Jun 26, 2023• 2 citations
Publisher

Abstract

The results of the development and testing of superconducting integrated microcircuits based on NbTiN/Al transmission lines at the frequencies up to 1.1 THz are presented. The integrated circuits consist of a slot planar antenna made of thin film of NbTiN coupled to a NbTiN/Al microstrip line, and a superconductor-insulator-superconductor (SIS) junction based on Nb/AlN/NbN operating as a terahertz (THz) detector. Two different designs having the operating range of 0.9-1.2 THz were numerically simulated, fabricated and experimentally tested. A strong pumping of SIS detector by a signal of the backward wave oscillator (BWO) around frequency of 1.05 THz was observed, which demonstrated the applicability of fabricated transmission lines at frequencies higher than 750 GHz, where the traditionally used Nb/Nb transmission lines cannot operate.

DOI
10.1109/rsemw58451.2023.10202053

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•Jan 1, 2008•0 citations
The results of the development and testing of superconducting integrated microcircuits based on NbTiN/Al transmission lines at the frequencies up to 1.1 THz are presented. The integrated circuits consist of a slot planar antenna made of thin film of NbTiN coupled to a NbTiN/Al microstrip line, and a superconductor-insulator-superconductor (SIS) junction based on Nb/AlN/NbN operating as a terahertz (THz) detector. Two different designs having the operating range of 0.9-1.2 THz were numerically simulated, fabricated and experimentally tested. A strong pumping of SIS detector by a signal of the backward wave oscillator (BWO) around frequency of 1.05 THz was observed, which demonstrated the applicability of fabricated transmission lines at frequencies higher than 750 GHz, where the traditionally used Nb/Nb transmission lines cannot operate.
Superconducting integrated circuits based on NbTiN/Al transmission lines at frequencies up to 1.1 THz have been developed and experimentally studied. Numerical modeling of two microcircuit topologies with an operating frequency range of 0.9…1.2 THz, containing a slot antenna, made in a thin NbTiN film and matched in output to a microstrip transmission line, and a tunnel junction of the “superconductor–insulator–superconductor” (SIS) type with an area of the order of 1 μm^2, acting as a terahertz detector. Experimental samples of the microcircuit were manufactured and tested; in the experimental setup, a backward wave lamp (BWL) with an output frequency of up to 1.1 THz was used as a source. A powerful pumping of the SIS detector was obtained, thereby demonstrating the applicability of the manufactured NbTiN/Al transmission lines for operation in superconducting circuits at frequencies above 750 GHz, where traditionally used Nb/Nb transmission lines do not operate due to high attenuation.
Abstract Superconducting integrated circuits based on NbTiN/Al transmission lines at frequencies of up to 1.1 THz have been developed and experimentally investigated. The numerical simulation has been carried out for two topologies of a microcircuit with an operating frequency range of 0.9‒1.2 THz, which contains a slot antenna formed in the NbTiN thin film and output-matched with a microstrip transmission line and a superconductor‒insulator‒superconductor (SIS) tunnel junction with an area of ~1 µm2 acting as a terahertz detector. Experimental samples of the microcircuit have been fabricated and tested in an experimental setup utilizing a backward-wave oscillator with an output frequency of up to 1.1 THz used as a source. The powerful pumping of the SIS detector has been obtained to demonstrate the applicability of the fabricated NbTiN/Al transmission lines for operation in superconducting circuits at frequencies above 750 GHz, where the conventional Nb/Nb transmission lines cannot operate due to high losses.
Abstract We have elaborated, fabricated and tested a THz source radiating to open space based on the superconducting flux-flow oscillator (FFO). In this concept, the oscillator is integrated with the transmitting lens antenna based on a slot structure in Nb film with a thickness of ~200 nm located on the same chip. The slot planar antenna is matched to the oscillator (by input) and to the semielliptical Si lens with a diameter of 10 mm (by output) providing a narrow output beam of THz emission. A harmonic mixer based on the superconductor-insulator-superconductor junction embedded in the “FFO and antenna” integrated structure has been used for the phase locking of the oscillator. Several designs of antenna coupled with the oscillator by microstrip lines have been numerically simulated, and the batches of experimental samples based on Nb-AlN-NbN superconducting trilayers with Rn ·A ~ 20 Ω·μm2 (jc ~ 10 kA/cm2) have been fabricated and tested. Two different setups were used for experimental study: a THz spectrometer based on the SIS receiver with a high spectral resolution (better than 0.1 MHz) and a Si bolometer. The overall operating range of 250 to 700 GHz is covered by all the developed designs.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
We have designed superconductor-insulator-superconductor (SIS) mixers using Nb/AlN/Nb tunnel junctions integrated with NbTiN/SiO2/NbTiN microstrip tuning circuits for the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (0.78-0.95 THz). In order to design the tuning circuits, we used terahertz time domain spectroscopy to experimentally derive the complex conductivity of relatively thick NbTiN films deposited on quartz substrate directly as a ground plane and on RF-sputtered SiO2as a microstrip. Results showed that the conductivities of both films can be described by a modified Mattis-Bardeen theory. We also investigated the junction heating effects originating from quasi-particle trapping in the Nb electrodes embedded in NbTiN circuits by varying the volume of the electrodes. It was confirmed that current-voltage curves of Nb/AlN/Nb tunnel junctions with thick (~200 nm) counter electrodes contacting NbTiN wirings showed higher gap voltages as well as reduced back-bending than those with thin (~50 nm) electrodes. Making use of these findings, our designed SIS mixers employing Nb/AlN/Nb junctions with a current density of 15 kA/cm2and all-NbTiN tuning circuits may cover the Band 10 with good sensitivity.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.