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Физика и техника полупроводников

Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs

I. A. Derebezov, В.А. Гайслер, A. V. Gaisler, Д.В. Дмитриев, А.И. Торопов, Sven Rodt, Martin von Helversen, S. Reitzenstein

Published Jan 1, 2023• 0 citations
Publisher

Abstract

The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.

DOI
10.21883/ftp.2023.04.55897.12k

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The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
Abstract The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In0.7_{0.7}0.7​Ga0.3_{0.3}0.3​As/In0.7_{0.7}0.7​Al0.3_{0.3}0.3​As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In0.7_{0.7}0.7​Al0.3_{0.3}0.3​As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C3v_{3v}3v​ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of ≈\approx≈ 1.3--1.9 ns and linewidths as low as ≈\approx≈ 300 μμμeV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a g(2)(0)g^{(2)}(0)g(2)(0) value of 0.141±0.0270.141 \pm 0.0270.141±0.027
The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include self-organized InAs/GaAs quantum dots and have a comparatively low Q factor in the range of 2000–3000, have been studied. It has been shown that a state with a given spin configuration—exciton with a certain polarization or trion—can be initialized in a single quantum dot under the coherent resonant linearly polarized optical pumping by a π pulse. The measurement of two-photon interference by the Hong–Ou–Mandel scheme has demonstrated that the degree of indistinguishability of successively emitted single photons is 97 and 93% at a time delay of 2 and 250 ns, respectively. Prospects of application of such sources in optical quantum computing schemes have been discussed.
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is investigated. A single-photon source for the red spectral range with an average emission rate exceeding 5 MHz and a zero-delay second-order correlation function of g (2) (0) = 0.08 is realized on the basis of these photonic nanostructures. The degree of indistinguishability of consecutively emitted photons measured in Hong-Ou-Mandel interferometry under above-barrier excitation is about 30%.