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Физика и техника полупроводников

Влияние процесса образования единичного кластера радиационных дефектов на переключение состояния транзисторной ячейки памяти

I. Yu. Zabavichev, А.С. Пузанов, С.В. Оболенский

Published Jan 1, 2023• 0 citations
Publisher

Abstract

The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.

DOI
10.21883/ftp.2023.04.55897.15k

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The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
Abstract The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.
In the fields of quantum communications and quantum computing, the transmission of information using single photons guarantees the security of the communication and enables calculations that would be impossible with our "classical" computers. One of the key elements in implementing such protocols is the photon source. It must emit, on demand, one and only one photon with specific quantum properties.The aim of this project is to characterise a source of single and indistinguishable photons, designed and manufactured at CEA-Grenoble, and consisting of an indium arsenide (InAs) semiconductor quantum dot integrated into a gallium arsenide (GaAs) nanocavity. With its low quality factor, the nanocavity enables photons to be extracted efficiently over a wide range of wavelengths (30nm). In addition, thanks to its small mode volume, the spontaneous emission of quantum dots within it can be accelerated by Purcell effect (Purcell factor up to 6).In this manuscript, we first detail the implementation and the optimisation of the experimental setups used to characterise the photons emitted by our sample : microphotoluminescence, radiative lifetime measurement, Hanbury-Brown and Twiss (HBT) experiment and Hong-Ou-Mandel (HOM) experiment. Then, we present the experimental results obtained for photons emitted by two distinct quantum dots : One containing neutral exciton states, and the second, containing a charged exciton state. In order to photo-create these exciton states in the quantum dots, two pulsed optical excitation schemes were implemented: the two-photon resonant excitation of the neutral biexciton, and the phonon-assisted quasi-resonant excitation of the neutral and charged excitons. We present the measurement of the three figures of merit of a single photon source for these two quantum dots : the brightness, the single-photon purity and the indistinguishability of the emitted photons. In a second phase, we will focus on the charged exciton state and measure the profile of its emission line and its autocorrelation function under continuous resonant excitation. These results, achieved within the nano-photonics group of the University of Basel, constitute the first demonstration of continuous excitation on these nanostructures, which is a good surprise given their small size.Finally, we will look at the effects of the application of mechanical stress on the energy separation of the two neutral exciton states, known as the "fine structure splitting" (FSS). During the radiative cascade of the neutral biexciton state, the two photons emitted are entangled in polarisation, and the fidelity of the entanglement depends in particular on the FSS. Here, we will consider a second sample, where the InAs quantum dots are embedded in a GaAs photonic nanowire. By bending the nanowire, mechanical stresses are applied to the quantum dots, which will modify the energy of the exciton states. We will present an experimental study aimed at observing a possible effect on the fine structure splitting.In conclusion, we have developed and optimised various experimental setups for characterising photon sources for applications in the fields of quantum communications and quantum computing. For a first version of these photonic nanostructures, the brightness, the single-photon purity and the indistinguishability of the photons emitted by our quantum dots integrated into nanocavities are very encouraging for the future. The next objectives are to improve the nanocavities and to characterise the decoherence phenomena and the mechanical coupling between the quantum dots and these nanostructures.
The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include self-organized InAs/GaAs quantum dots and have a comparatively low Q factor in the range of 2000–3000, have been studied. It has been shown that a state with a given spin configuration—exciton with a certain polarization or trion—can be initialized in a single quantum dot under the coherent resonant linearly polarized optical pumping by a π pulse. The measurement of two-photon interference by the Hong–Ou–Mandel scheme has demonstrated that the degree of indistinguishability of successively emitted single photons is 97 and 93% at a time delay of 2 and 250 ns, respectively. Prospects of application of such sources in optical quantum computing schemes have been discussed.
We report on emission properties of single-photon sources of visible light, based on InAs/AlGaAs, CdTe/ZnTe, and CdSe/ZnSe quantum dot (QD) heterostructures grown by molecular beam epitaxy. For all types of QDs, the studies performed by micro-photoluminescence and photon correlation spectroscopies demonstrated the single-photon nature of emission with typical values of the second-order correlation function g (2) (0) less than 0.2 and allowed evaluation of sub-microsecond kinetics of blinking governed by local charging effects.
The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is investigated. A single-photon source for the red spectral range with an average emission rate exceeding 5 MHz and a zero-delay second-order correlation function of g (2) (0) = 0.08 is realized on the basis of these photonic nanostructures. The degree of indistinguishability of consecutively emitted photons measured in Hong-Ou-Mandel interferometry under above-barrier excitation is about 30%.