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Applied Physics Letters

Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

Richard P. Mirin

Published Feb 12, 2004• 48 citations
Publisher

Abstract

We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.

DOI
10.1063/1.1650032

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We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation,g(2)g^{(2)}g(2)(0), is less than 0.260$\pm0.024fortemperaturesupto100K.At120K,0.024 for temperatures up to 100 K. At 120 K,0.024fortemperaturesupto100K.At120K,g^{(2)}(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. In addition, we characterize the performance of a superconducting single photon detector (SSPD) based on a nanopatterned niobium nitride wire that exhibits 68(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68\pm3−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto23-ps timing jitter and less than 100-Hz dark count rate with a detection efficiency (DE) of up to 2% at 902 nm. This detector is used to measure spontaneous emission lifetimes of semiconductor quantum wells (QWs) emitting light at wavelengths of 935 and 1245 nm. The sensitivity to wavelengths longer than 13−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto2\mumandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandam and the Gaussian temporal response of this superconducting detector present clear advantages over the conventional detector technologies. We also use this detector to characterize the emission from a single InGaAs QD embedded in a micropillar cavity, measuring a spontaneous emission lifetime of 370 ps and amandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandag^{(2)}(0)of0.24(0) of 0.24(0)of0.24\pm$0.03.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
We report the observation of antibunched emission from single self-assembled InAs quantum dots under various conditions. We have measured the correlation function of the photon emission pertaining to single emission lines from single quantum dots under continuous and pulsed laser excitation, as well as under continuous white light excitation. The measurements were performed under different excitation intensities at liquid helium temperatures on two samples with distinct structures. At higher temperatures (30 K), an antibunching dip was still observed. We have also observed antibunching on a second emission line in the quantum dot spectrum, attributed to the biexciton, demonstrating the possibility of generating photon pairs with a single quantum dot. Polarization correlations on the biexciton and exciton line were also measured in an attempt to generate entangled photon pairs.
We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a single self-assembled InAs/GaAs QD at 4 K. These results prove that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. Using the quantum regression theorem, we find that the normalized second-order correlation function g(2)(τ) can be described by a single exponential function in the weak-laser excitation regime. From this model we derive that the time constant of the photon antibunching signal is determined by the effective incoherent pump and recombination rates of the nonresonant optically pumped QD.