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Chinese Physics Letters

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

Dou Xiu-Ming, Baoquan Sun, Chang Xiu-Ying, Xiong Yong-Hua, Huang She-Song, Ni Hai-Qiao, Zhichuan Niu

Published Sep 1, 2008• 2 citations
Publisher

Abstract

We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

DOI
10.1088/0256-307x/25/9/037

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We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
We have studied the photoluminescence correlation from a single InAs/GaAs self-assembled Stranski–Krastanow quantum dot under continuous, as well as under pulsed excitation. Under weak continuous excitation, where the single dot luminescence is due primarily to single exciton recombinations, antibunching is observed in the single dot emission correlation. Under weak pulsed excitation, the number of photons emitted by the quantum dot per pulse is close to one. We present data obtained under both conditions and are able to show that devices based on single quantum dots can be used to generate single photons.
We report the observation of antibunched emission from single self-assembled InAs quantum dots under various conditions. We have measured the correlation function of the photon emission pertaining to single emission lines from single quantum dots under continuous and pulsed laser excitation, as well as under continuous white light excitation. The measurements were performed under different excitation intensities at liquid helium temperatures on two samples with distinct structures. At higher temperatures (30 K), an antibunching dip was still observed. We have also observed antibunching on a second emission line in the quantum dot spectrum, attributed to the biexciton, demonstrating the possibility of generating photon pairs with a single quantum dot. Polarization correlations on the biexciton and exciton line were also measured in an attempt to generate entangled photon pairs.
我们从单个 InAs/GaAs 自我装配的 Stranski-Krastanow 量点在单个光子排放上报导直到 80 K 在下面搏动并且连续波浪刺激。在温度 80 K，在零次延期的秒顺序关联功能， g (2 )(0 ) ，被测量为搏动的刺激是 0.422。在在连续波浪刺激下面的一样的温度，光子 antibunching 效果被观察。因此，我们的试验性的结果在液体氮温度在单个光子排放演示自我装配的 InAs/GaAs 量点的一个有希望的潜在的应用程序。[从作者抽象]
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
We report the experimental observation of photon antibunching in fluorescence from a single self-assembled InAs quantum dot. The nonclassical photon statistics proves the atomlike nature of a single quantum dot at cryogenic temperatures. Pump-power-dependent measurements of the correlation function ${g}^{(2)}(\ensuremath{\tau})$ provide a method to determine the recombination time of the single exciton ground-state transition that does not require pulsed lasers. Using this method, we investigate the influence of photonic environment on a single quantum dot exciton lifetime.
We report on the study of a single-photon-emitting diode at 77K. The device is composed of InAs∕GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g(2)(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g(2)(0), and provided some useful information for the future application.