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Physical review. B, Condensed matter

Nonclassical radiation from a single self-assembled InAs quantum dot

Christoph Becher, Alper Kıraz, Peter Michler, Ataç İmamoğlu, Winston Vaughan Schoenfeld, Pierre M. Petroff, Lidong Zhang, Evelyn L. Hu

Published Mar 13, 2001• 126 citations
Publisher

Abstract

We report the experimental observation of photon antibunching in fluorescence from a single self-assembled InAs quantum dot. The nonclassical photon statistics proves the atomlike nature of a single quantum dot at cryogenic temperatures. Pump-power-dependent measurements of the correlation function ${g}^{(2)}(\ensuremath{\tau})$ provide a method to determine the recombination time of the single exciton ground-state transition that does not require pulsed lasers. Using this method, we investigate the influence of photonic environment on a single quantum dot exciton lifetime.

DOI
10.1103/physrevb.63.121312

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We report the experimental observation of photon antibunching in fluorescence from a single self-assembled InAs quantum dot. The nonclassical photon statistics proves the atomlike nature of a single quantum dot at cryogenic temperatures. Pump-power-dependent measurements of the correlation function g(2)(\ensuremathτ){g}^{(2)}(\ensuremath{\tau})g(2)(\ensuremathτ) provide a method to determine the recombination time of the single exciton ground-state transition that does not require pulsed lasers. Using this method, we investigate the influence of photonic environment on a single quantum dot exciton lifetime.
We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a single self-assembled InAs/GaAs QD at 4 K. These results prove that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. Using the quantum regression theorem, we find that the normalized second-order correlation function g(2)(τ) can be described by a single exponential function in the weak-laser excitation regime. From this model we derive that the time constant of the photon antibunching signal is determined by the effective incoherent pump and recombination rates of the nonresonant optically pumped QD.
We report the observation of antibunched emission from single self-assembled InAs quantum dots under various conditions. We have measured the correlation function of the photon emission pertaining to single emission lines from single quantum dots under continuous and pulsed laser excitation, as well as under continuous white light excitation. The measurements were performed under different excitation intensities at liquid helium temperatures on two samples with distinct structures. At higher temperatures (30 K), an antibunching dip was still observed. We have also observed antibunching on a second emission line in the quantum dot spectrum, attributed to the biexciton, demonstrating the possibility of generating photon pairs with a single quantum dot. Polarization correlations on the biexciton and exciton line were also measured in an attempt to generate entangled photon pairs.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
We have studied the photoluminescence correlation from a single InAs/GaAs self-assembled Stranski–Krastanow quantum dot under continuous, as well as under pulsed excitation. Under weak continuous excitation, where the single dot luminescence is due primarily to single exciton recombinations, antibunching is observed in the single dot emission correlation. Under weak pulsed excitation, the number of photons emitted by the quantum dot per pulse is close to one. We present data obtained under both conditions and are able to show that devices based on single quantum dots can be used to generate single photons.
We report photon correlation measurements that reveal unique signatures of biexciton and charged exciton emissions in a single self-assembled InAs quantum dot. Biexciton emission exhibits both bunching and antibunching under continuous-wave excitation and only antibunching under pulsed excitation. Cross correlation between biexciton and single-exciton emissions reveals highly asymmetric features due to cascaded emission. Under our excitation conditions, no polarization correlations between the exciton and biexciton emissions were observed.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.