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Applied Physics Letters

Single-photon-emitting diode at liquid nitrogen temperature

Xiuming Dou, X. Y. Chang, Baoquan Sun, Y. H. Xiong, Zhichuan Niu, Siyi Huang, H. Q. Ni, Yihang Du, J. B. Xia

Published Sep 8, 2008• 22 citations
Publisher

Abstract

We report on the study of a single-photon-emitting diode at 77K. The device is composed of InAs∕GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g(2)(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g(2)(0), and provided some useful information for the future application.

DOI
10.1063/1.2980517

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We report on the study of a single-photon-emitting diode at 77K. The device is composed of InAs∕GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g(2)(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g(2)(0), and provided some useful information for the future application.
We report the realization of the first electrically-driven single photon source. The device is based on a GaAs p-i-n diode containing self-assembled InAs quantum dots embedded within the i-region. Time resolved electroluminescence from the device yields information on the radiative lifetimes of the single quantum dots involved. Applying a continuous current a dip is measured in the second-order correlation function at zero time delay indicating that the luminescence is antibunched. Under pulsed excitation by subnanosecond voltage pulses, strong suppression of multi-photon pulses is achieved with respect to a laser of the same average intensity. The results suggest that conventional semiconductor technology can be used to mass-produce a single photon source for applications in quantum information technology.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
An electrically driven ∼1.3μm single-photon source is demonstrated. The source contains InAs quantum dots within a planar cavity light-emitting diode. Electroluminescence (EL) spectra show clear emission lines and from time resolved EL we estimate a primary decay time of ∼1ns. Time-varying Stark shifts are studied and proposed for truncating the emission in jitter-sensitive applications (optimization for 2ns detector gate width demonstrated) and for relaxing excitation pulse-length requirements. A correlation measurement demonstrates suppression of multiphoton emission to below 28% of the Poissonian level before correction for detector dark counts, suggesting g(2)(0)∼0.19 for the source itself.
Modeling and design of a single photon detector and its various characteristics are presented. It is a type of avalanche photo diode (APD) designed to suit the requirements of a Quantum Key Distribution (QKD) detection system. The device is modeled to operate in a gated mode at liquid nitrogen temperature for minimum noise and maximum gain. Different types of APDs are compared for best performance. The APD is part of an optical communication link, which is a private channel to transmit the key signal. The encrypted message is sent via a public channel. The optical link operates at a wavelength of 1.55μm. The design is based on InGaAs with a quantum efficiency of more than 75% and a multiplication factor of 1000. The calculated dark current is below 10-12A with an overall signal to noise ratio better than 18 dB. The device sensitivity is better than -40 dBm, which is more than an order of magnitude higher than the dark current, corresponding to a detection sensitivity of two photons in pico-second pulses.
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources.However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots.Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased.Here we develop a theoretical framework to study single-photon emission from color centers in diamond under electrical pumping.The proposed model comprises electron and hole trapping and releasing, transitions between the ground and excited states of the color center as well as structural transformations of the center due to carrier trapping.It provides the possibility to predict both the photon emission rate and the wavelength of emitted photons.Self-consistent numerical simulations of the single-photon emitting diode based on the proposed model show that the photon emission rate can be as high as 100 kcounts s -1 at standard conditions.In contrast to most optoelectronic devices, the emission rate steadily increases with the device temperature achieving of more than 100 Mcount s -1 at 500 K, which is highly advantageous for practical applications.These results demonstrate the potential of color centers in diamond as electrically driven non-classical light emitters and provide a foundation for the design and development of single-photon sources for optical quantum computation and quantum communication networks operating at room and higher temperatures.