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Journal of Physics Conference Series

Entangled-Photon Pair Emission from a Light-Emitting Diode

C. L. Salter, R. M. Stevenson, Ian A. Farrer, Christine A. Nicoll, D. A. Ritchie, Andrew J. Shields

Published Mar 1, 2011• 1 citation
Publisher

Abstract

Electrically-driven entangled-photon generation is demonstrated for the first time using a single InAs/GaAs quantum dot embedded in a light emitting diode structure. Under alternating-current injection, we found that the entanglement fidelity was of sufficient quality for quantum information applications such as quantum key distribution.
DOI
10.1088/1742-6596/286/1/012022

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Existing sources of entangled photons require a laser excitation, imposing a practical limit on their potential for large-scale quantum information applications. For the widely used parametric down-conversion sources, zero or multiple photon-pairs are usually emitted due to the probabilistic nature of the non-linear process. This presents an additional fundamental limitation in the form of efficiency and errors. Here we demonstrate the first electrically driven entangled light source, based on a layer of InAs quantum dots embedded in a p-i-n light emitting diode structure, with potential to operate 'on-demand'.
We report the realization of the first electrically-driven single photon source. The device is based on a GaAs p-i-n diode containing self-assembled InAs quantum dots embedded within the i-region. Time resolved electroluminescence from the device yields information on the radiative lifetimes of the single quantum dots involved. Applying a continuous current a dip is measured in the second-order correlation function at zero time delay indicating that the luminescence is antibunched. Under pulsed excitation by subnanosecond voltage pulses, strong suppression of multi-photon pulses is achieved with respect to a laser of the same average intensity. The results suggest that conventional semiconductor technology can be used to mass-produce a single photon source for applications in quantum information technology.
Sources of entangled pairs of photons can be used for encoding signals in quantum-encrypted communications, allowing a sender, Alice, and a receiver, Bob, to exchange keys without the possibility of eavesdropping. In fact, any quantum information system would require single and entangled photons to serve as qubits. For this purpose, semiconductor quantum dots (QD) have been extensively studied for their ability to produce entangled light and function as single photon sources. The quality of such sources is evaluated based on three criteria: high efficiency, small multi-photon probability, and quantum indistinguishability. In this work, a simple quantum dot-based LED (E-LED) was used as a quantum light source for on-demand emission, indicating the potential for use as quantum information devices. Limitations of the device include the fine-structure splitting of the quantum dot excitons, their coherence lengths and charge carrier interactions in the structure. The quantum dot-based light emitting diode was initially shown to operate in pulsed mode under AC bias frequencies of up to several hundreds of MHz, without compromising the quality of emission. In a Hong-ou-Mandel interference type experiment, the quantum dot photons were shown to interfere with dissimilar photons from a laser, achieving high two-photon interference (TPI) visibilities. Quantum entanglement from a QD photon pair was also measured in pulsed mode, where the QD-based entangled-LED (E-LED) was electrically injected at a frequency of 203 MHz. After verifying indistinguishability and good entanglement properties from the QD photons under the above conditions, a quantum relay over 1km of fibre was demonstrated, using input qubits from a laser source. The average relay fidelity was high enough to allow for error correction for this BB84-type scheme. To improve the properties of the QD emission, an E-LED was developed based on droplet epitaxy (D-E) QDs, using a different QD growth technique. The relevant chapter outlines the process of QD growth and finally demonstration of quantum entanglement from an electrically injected diode, yielding improvements compared to previous E-LED devices. For the same reason, an alternative method of E-LED operation based on resonant two-photon excitation of the QD was explored. Analysis of Rabi oscillations in a quantum dot with a bound exciton state demonstrated coupling of the ground state and the biexciton state by the external oscillating field of a laser, therefore allowing the transition between the two states. The results include a considerable improvement in the coherence length of the QD emission, which is crucial for future quantum network applications. We believe that extending this research can find application in quantum cryptography and in realising the interface of a quantum network, based on semiconductor nanotechnology.
On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.