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Single- and entangled-photon emission from strain tunable quantum dots devices

Jiaxiang Zhang

Published Apr 30, 2015• 0 citations
OpenAlex

Abstract

On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.

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On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.
Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.
Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform, a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but a fine-structure splitting (FSS) between the bright exciton states lowers dramatically the degree of entanglement of the sources and hampers severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of photon pairs featuring the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75 ± 0.02. Furthermore, we study the evolution of Bell's parameters as a function of FSS and demonstrate for the first time that filtering-free violation of Bell's inequalities requires the FSS to be smaller than 1 μeV. This upper limit for the FSS also sets the tuning range of exciton energies (∼1 meV) over which our device operates as an energy-tunable source of highly entangled photons. A moderate temporal filtering further increases the concurrence and the tunability of exciton energies up to 0.82 and 2 meV, respectively, though at the expense of 60% reduction of count rate.
Abstract Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.
Sources of entangled pairs of photons can be used for encoding signals in quantum-encrypted communications, allowing a sender, Alice, and a receiver, Bob, to exchange keys without the possibility of eavesdropping. In fact, any quantum information system would require single and entangled photons to serve as qubits. For this purpose, semiconductor quantum dots (QD) have been extensively studied for their ability to produce entangled light and function as single photon sources. The quality of such sources is evaluated based on three criteria: high efficiency, small multi-photon probability, and quantum indistinguishability. In this work, a simple quantum dot-based LED (E-LED) was used as a quantum light source for on-demand emission, indicating the potential for use as quantum information devices. Limitations of the device include the fine-structure splitting of the quantum dot excitons, their coherence lengths and charge carrier interactions in the structure. The quantum dot-based light emitting diode was initially shown to operate in pulsed mode under AC bias frequencies of up to several hundreds of MHz, without compromising the quality of emission. In a Hong-ou-Mandel interference type experiment, the quantum dot photons were shown to interfere with dissimilar photons from a laser, achieving high two-photon interference (TPI) visibilities. Quantum entanglement from a QD photon pair was also measured in pulsed mode, where the QD-based entangled-LED (E-LED) was electrically injected at a frequency of 203 MHz. After verifying indistinguishability and good entanglement properties from the QD photons under the above conditions, a quantum relay over 1km of fibre was demonstrated, using input qubits from a laser source. The average relay fidelity was high enough to allow for error correction for this BB84-type scheme. To improve the properties of the QD emission, an E-LED was developed based on droplet epitaxy (D-E) QDs, using a different QD growth technique. The relevant chapter outlines the process of QD growth and finally demonstration of quantum entanglement from an electrically injected diode, yielding improvements compared to previous E-LED devices. For the same reason, an alternative method of E-LED operation based on resonant two-photon excitation of the QD was explored. Analysis of Rabi oscillations in a quantum dot with a bound exciton state demonstrated coupling of the ground state and the biexciton state by the external oscillating field of a laser, therefore allowing the transition between the two states. The results include a considerable improvement in the coherence length of the QD emission, which is crucial for future quantum network applications. We believe that extending this research can find application in quantum cryptography and in realising the interface of a quantum network, based on semiconductor nanotechnology.
We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a microstructured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of self-assembled quantum dots (QDs) via anisotropic strain engineering. Theoretical models based on k·p theory in combination with finite-element calculations show that the energy of the polarization-entangled photons emitted by QDs can be tuned in a range larger than 100 meV without affecting the degree of entanglement of the quantum source. These results pave the way towards the deterministic implementation of QD entanglement resources in all-electrically-controlled solid-state-based quantum relays.
Deterministic sources of entangled photon pairs and indistinguishable photons are expected to play a key role in photonic quantum technologies. Semiconductor quantum dots are promising candidates due to their on-demand emission and compatibility with nanophotonic structures. However, current implementations face trade-offs between extraction efficiency, Purcell enhancement, as well as charge noise that causes blinking and degrades indistinguishability. Here we demonstrate a tunable nano-optoelectronic device based on a quantum dot embedded in a p-i-n diode circular-Bragg-grating-resonator and featuring extraction efficiencies up to 0.55(6) and Purcell-factor of $\sim$8. The device generates wavelength-tunable entangled photon pairs with suppressed blinking and raw (corrected) concurrence > 0.89 (0.91) over a range of 1.6 nm. The very same source also emits single, nearly Fourier-limited and highly indistinguishable photons with raw (corrected) VHOM\mathcal{V}_{\text{HOM}}VHOM​ = 0.951(4) (0.988(6)). These results demonstrate a viable platform for semiconductor quantum photonics.