Optics Express

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

Varun Boehm Verma, Martin J. Stevens, Kevin L. Silverman, Neville L. Dias, A. Garg, J. J. Coleman, Richard P. Mirin

Published Feb 17, 2011• 20 citations

Abstract

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.

DOI: 10.1364/oe.19.004182

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Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

We demonstrate photon antibunching from a single lithographically defined quantum dot. Measurement of the second order autocorrelation function indicates g (2) (0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.

IEEE/LEOS Winter Topicals Meeting Series (WTM)Jan 1, 20110 citations

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot | NIST

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Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

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Physical Review AJun 25, 201522 citations

Optics Express

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

Varun Boehm Verma, Martin J. Stevens, Kevin L. Silverman, Neville L. Dias, A. Garg, J. J. Coleman, Richard P. Mirin

Published Feb 17, 2011• 20 citations

Publisher

Abstract

DOI: 10.1364/oe.19.004182

Related papers

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

IEEE/LEOS Winter Topicals Meeting Series (WTM)Jan 1, 20110 citations

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot | NIST

Varun Boehm Verma, Martin J. Stevens, Kevin L. Silverman +4 more

Applied Physics LettersFeb 28, 20110 citations

Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

Richard P. Mirin

We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.

Applied Physics LettersFeb 12, 200448 citations

Nonclassical Radiation from a Single Quantum Dot

Peter Michler, Ataç İmamoğlu, Alper Kıraz +7 more

We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a single self-assembled InAs/GaAs QD at 4 K. These results prove that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. Using the quantum regression theorem, we find that the normalized second-order correlation function g(2)(τ) can be described by a single exponential function in the weak-laser excitation regime. From this model we derive that the time constant of the photon antibunching signal is determined by the effective incoherent pump and recombination rates of the nonresonant optically pumped QD.We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a single self-assembled InAs/GaAs QD at 4 K. These results prove that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. Using the quantum regression theorem, we find that the normalized second-order correlation function g(2)(τ) can be described by a single exponential function in the weak-laser excitation regime. From this model we derive that the time constant of the photon antibunching signal is determined by the effective incoherent pump and recombination rates of the nonresonant optically pumped QD.

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Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band

Rabbia Tahir, Paweł Wyborski, Artur Tuktamyshev +4 more

Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In $_{0.7}$ Ga $_{0.3}$ As/In $_{0.7}$ Al $_{0.3}$ As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In $_{0.7}$ Al $_{0.3}$ As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C $_{3v}$ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of $\approx$ 1.3--1.9 ns and linewidths as low as $\approx$ 300 $μ$ eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a $g^{(2)}(0)$ value of $0.141 \pm 0.027$ Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C$_{3v}$ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of $\approx$ 1.3--1.9 ns and linewidths as low as $\approx$ 300 $μ$eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a $g^{(2)}(0)$ value of $0.141 \pm 0.027$

quant-pharXiv:2605.17332May 19, 2026

Photon antibunching from few quantum dots in a cavity

Christopher Gies, F. Jahnke, Weng W. Chow

Single quantum dots (QDs) are frequently used as single-photon sources, taking advantage of the final exciton decay in a cascade that produces energetically detuned photons. We propose and analyze a new concept of single-photon source, namely, a few-QD microcavity system driven close to, but below the lasing threshold under strong excitation. Surprisingly, even for two or three QDs inside a cavity, antibunching is observed. To quantify the results, we find that a classification of single-photon emission in terms of antibunching in the autocorrelation function ${g}^{(2)}(0)$ is insufficient and more details of the photon statistics are required. Our investigations are based on a quantum-optical theory that we solve to obtain the density operator for the quantum-mechanical active medium and radiation field.Single quantum dots (QDs) are frequently used as single-photon sources, taking advantage of the final exciton decay in a cascade that produces energetically detuned photons. We propose and analyze a new concept of single-photon source, namely, a few-QD microcavity system driven close to, but below the lasing threshold under strong excitation. Surprisingly, even for two or three QDs inside a cavity, antibunching is observed. To quantify the results, we find that a classification of single-photon emission in terms of antibunching in the autocorrelation function ${g}^{(2)}(0)$ is insufficient and more details of the photon statistics are required. Our investigations are based on a quantum-optical theory that we solve to obtain the density operator for the quantum-mechanical active medium and radiation field.

Physical Review AJun 25, 201522 citations

_{0.7}

_{0.3}

As/In

_{0.7}

_{0.3}

As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In

_{0.7}

_{0.3}

As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C

_{3v}

symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of

\approx

1.3--1.9 ns and linewidths as low as

\approx

300

μ

eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a

g^{(2)}(0)

value of

0.141 \pm 0.027

{g}^{(2)}(0)

is insufficient and more details of the photon statistics are required. Our investigations are based on a quantum-optical theory that we solve to obtain the density operator for the quantum-mechanical active medium and radiation field.