We describe a million-pixel-scale multiplexed readout for superconducting Transition Edge Sensor (TES) microcalorimeters, using Rapid Single Flux Quantum (RSFQ) digital circuits. Depending on the application and the power dissipation requirements, the readout circuits may be either fabricated on the same wafer as the TES or integrated with the TES wafer using a multichip module, thereby integrating the TES and readout circuits. A data reduction scheme in the RSFQ circuits is described, using integrating counters to measure the TES pulse area. Power and clock requirements for measuring a large number of TES channels per readout line are discussed. Basic components of the ISTER readout circuit have been fabricated in the SFQ5ee process at MIT Lincoln Laboratory and operated at 4 K. The fabrication process has eight fully planarized Nb layers and one layer of Nb/Al-AlOx/Nb Josephson junctions with 100$\mu$A/$\mu$m$^{2}$critical current density. Simulations of a TES read out are performed to investigate possible limits on energy resolution using ISTER.
We describe a million-pixel-scale multiplexed readout for superconducting Transition Edge Sensor (TES) microcalorimeters, using Rapid Single Flux Quantum (RSFQ) digital circuits. Depending on the application and the power dissipation requirements, the readout circuits may be either fabricated on the same wafer as the TES or integrated with the TES wafer using a multichip module, thereby integrating the TES and readout circuits. A data reduction scheme in the RSFQ circuits is described, using integrating counters to measure the TES pulse area. Power and clock requirements for measuring a large number of TES channels per readout line are discussed. Basic components of the ISTER readout circuit have been fabricated in the SFQ5ee process at MIT Lincoln Laboratory and operated at 4 K. The fabrication process has eight fully planarized Nb layers and one layer of Nb/Al-AlOx/Nb Josephson junctions with 100μA/μm2critical current density. Simulations of a TES read out are performed to investigate possible limits on energy resolution using ISTER.
We propose a single-flux-quantum (SFQ) based readout circuit for a transition edge sensor (TES) array for X-ray radiation detection. Utilization of SFQ circuits for this purpose enables large-scale integration of TESs due to very high speed processing ability of the received signals and using an already established integrated circuit design environment. We utilize the cooling time dependence of the TES on the incident X-ray energy. Time to digital conversion is made by using an SFQ based quasi-one-junction SQUID (QOS), which works as a 1-bit comparator with an adjustable current threshold level, and an SFQ based high speed counter. The readout system is composed of two separate chips that are connected to each other with flexible superconducting wiring. The QOS-multiplexer chip is directly connected to the TES array and it performs the digital conversion of the TES output. The demultiplexer-counter chip, which will be placed at elevated temperatures, receives the multiplexed SFQ pulses and determines the duration of the TES output which is above the predetermined threshold level. Final goal of this work is to readout more than 10 k TES pixels and in this paper, feasibility of the system and current status of the development process is demonstrated.
We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more commonly used silicon nitride membranes, is compatible with monolithic fabrication of integrated TES and SQUID circuits. The all-silicon architecture additionally allows efficient use of focal plane area; the readout circuitry may be positioned out of the focal plane by bending a thinned portion of the chip. Compatibility with integrated fabrication and efficient use of focal plane area provide a path to an efficient soft X-ray spectrometer.
This work is motivated by our goal to develop a 10,000-pixel TES spectrometer to overcome critical measurement limitations in catalysis research. The characterization of fragile, carbon-based intermediates via techniques like Resonant Inelastic X-ray Scattering (RIXS) is often precluded by the slow, high-flux nature of existing technologies. The new instrument will allow for fast RIXS measurements to be made without causing sample damage. We verify the detector models and measure the energy resolution using a pulsed optical laser, demonstrating the viability of this approach for the final instrument to be deployed at the National Synchrotron Light Source II (NSLS-II).
Using a fully automated cryogenic wafer prober, we measured superconductor fabrication process control monitors and simple integrated circuits on 200 mm wafers at 4.2 K, including Nb/Al-AlOx/Nb Josephson junctions, SQUID-based circuits for measuring inductors, test structures for measuring critical current of superconducting wires and vias, resistors, etc., to demonstrate the feasibility of using the system for characterizing niobium superconducting devices and integrated circuits on a wafer scale. The data on the wafer-scale distributions of the junction tunnel resistance, energy gap, inductance of Nb layers, critical currents of interlayer vias are presented. The wafers were fabricated in the SFQ5ee process, the fully planarized process with eight niobium layers and a layer of kinetic inductors, developed for superconductor electronics at MIT Lincoln Laboratory. The cryogenic wafer prober was developed at HPD/ FormFactor, Inc.
We report very-low-noise, fast-response, middle-scale multiplexing in a microwave superconducting quantum interference device multiplexer (MW-Mux) as a transition-edge sensor (TES) readout. Our MW-Mux is able to read 40 channels with 500 kHz sampling and has a low readout noise of 0.9 μΦ0/Hz (where Φ0 is the magnetic flux quantum), equivalent to 9 pA/Hz. By contrast, a multiplexer of less than 10 pixels with 500 kHz sampling and ∼2 μΦ0/Hz readout noise has so far been reported in the literature. Owing to the 500 kHz sampling, our MW-Mux exhibits a fast response to detect a TES pulse with a rise time around 12 μs. We demonstrated simultaneous readout of 38 pixels from an array of x-ray TES microcalorimeters. The measured full-width values at half-maximum spectral resolution ranged from 2.79 to 4.56 eV, with a median value of 3.30 eV at 5.9 keV, including a ∼10% contribution of readout noise, i.e., 0.9–1.7 eV.
Using a fully automated cryogenic wafer prober, we measured superconductor fabrication process control monitors and simple integrated circuits on 200-mm wafers at 4.4 K, including SQIF-based magnetic field sensors, SQUID-based circuits for measuring inductors, Nb/Al-AlOx/Nb Josephson junctions, test structures for measuring critical current of superconducting wires and vias, resistors, etc., to demonstrate the feasibility of using the system for characterizing niobium superconducting devices and integrated circuits on a wafer scale. Data on the wafer-scale distributions of the residual magnetic field, junction tunnel resistance, energy gap, inductance of multiple Nb layers, and critical currents of interlayer vias are presented. A comparison with existing models is made. The wafers were fabricated in the SFQ5ee process, the fully planarized process with eight niobium layers and a layer of kinetic inductors, developed for superconductor electronics at MIT Lincoln Laboratory, Lexington, MA, USA. The cryogenic wafer prober was developed at HPD/FormFactor, Inc., Boulder, CO, USA.
Abstract We review the existing fabrication processes for superconductor digital electronics and describe approaches to increasing the scale of integration of superconducting digital circuits from the current level of about one million Josephson junctions (JJs) on a 1-cm 2 chip toward ten million JJs per chip. We present designs of ac-clocked Single Flux Quantum (SFQ) shift registers, convenient benchmarking circuits, in a 250-nm-linewidth superconductor electronics fabrication process developed recently at MIT Lincoln Laboratory (MIT LL). For shift registers using resistively shunted JJs with Josephson critical current density, J c of 100 μA/μm 2 , we achieved a record-high circuit density of 4.2·10 6 JJs per cm 2 , a factor of three higher than the previous record obtained in the MIT LL 350-nm-linewidth SFQ5ee process. Using self-shunted JJs with J c of 600 μA/μm 2 , we increased this record circuit density to 7.4·10 6 JJs per cm 2 .