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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

The Study on Spectral Hole Burning Rate in BaFCl0.5Br0.5: Sm2+

Jiahua Zhang, Hongwei Song, Yu Zhao, Ming Tian, Kai Dou, Shihua Huang, Jiaqi Yu

Published Jan 1, 1994• 0 citations
Publisher

Abstract

In Sm2+ doped alkline earth halides, hole burning process is two step photoionization of Sm2+ following electron trapping [1]. The first step is using burning laser to excite electron of Sm2+ from the ground state 7F0 to the excited energy level 5DJ. The second step is using gating laser to excite the electron from the 5DJ level to the conduction band, where the free electron will be captured either by trap or by the ionized Sm2+ ion again. The overall process depends on the factors: excitation rate, the trapping rate and the recombination rate.

DOI
10.1364/shbs.1994.wd25

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PHOTON GATED HOLE BURNING IN THE7F0?5D2ABSORPTION OF BaCIF : Sm2+

J. C. Vial, R. M. Macfarlane

Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F0→5D0 and 7F0→5D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F0→5D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.

Le Journal de Physique Colloques•Dec 1, 1987•1 citation

Trap Effect in Spctral Hole Burning of Sm2+ Doped Crystals

Jiahua Zhang, Ling‐Dong Sun, Weiping Qin +2 more

Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1992•0 citations

Electron transition process of 5D2→7F0 of Sm2+ in spectral hole-burning

Hongwei Song, Jiahua Zhang, Shihua Huang +1 more

Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1994•0 citations

Spectral hole burning and excited electrons in Sm2+ -doped Al2O3−SiO2 glasses

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Persistent spectral hole burning in the $f\ensuremath{\rightarrow}f$ transition and changes in the $f\ensuremath{\rightarrow}d$ transition spectra upon laser irradiation were investigated in ${\mathrm{Sm}}^{2+}$-doped ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses prepared by a sol-gel process. The hole was burned in the ${}^{7}{F}_{0}{\ensuremath{\rightarrow}}^{5}{D}_{0}$ line of ${\mathrm{Sm}}^{2+}$ ions using a DCM dye laser at 77 K and the dependence of the burning efficiency on laser power and burning time was measured. The hole depth increased with increasing laser irradiation time, reaching up to $\ensuremath{\sim}12%$ of the total intensity within a few hundred seconds. Neither an antihole around the burned hole nor a change in the fluorescence line narrowing spectrum were observed after hole burning. The hole depth linearly increased with increasing the incident laser power up to $\ensuremath{\sim}1{\mathrm{W}/\mathrm{m}\mathrm{m}}^{2},$ indicating a single-photon hole-burning process. On the other hand, laser irradiation with a wavelength corresponding to the energy of the ${4f}^{6}\ensuremath{\rightarrow}{4f}^{5}5d$ transition resulted in a decrease of both the absorption and fluorescence intensities but no formation of a hole. It was concluded that the electrons excited in the ${4f}^{5}5d$ level were further excited into the conduction band of the host matrix by a two-photon absorption process and then captured in the trapping center.

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Photon-gated spectral hole burning study on inorganic material BaFCl_(0.5)Br_(0.5) : Sm~(2+)

Hongsheng Qian, Yu Jiaqi

Investigations of photon- gated spectral hole burning and its mechanism for the inorganic material BaFCl0.5Br0.5 : Sm2+ are presented. Multiple holes burning, hole erasing and repeatable hole burning were realized. Gating ratio and hole stability were also measured. The experimental results indicated that more than 1 × 103 persistent spectral holes within an inhomogeneously broadened absorption band of BaFCl0. 5Br0.5 : Sm2+ at low temperature of 4 K could be burned.

Acta Optica Sinica•Jan 1, 1993•0 citations

ELECTRON TRANSITION PROCESS OF MyM′1-yFClxBr1-x:Sm2+ AND SPECTRAL HOLE-BURNING EFFICIENCY

Hongwei Song, ZHANG JIA-HUA, ZHAO YU +3 more

By measuring the excitation spectra of the 4f5d bands and the fluorescent decays of the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability depending on temperature in MyM′1-yFClxBr1-x:Sm2+(M=Mg,Ca,Sr,Ba)series, we have studied the dependence of the energy separation between the 4f5d bands and the 5ＤJ level, the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability on the composition grade(x) and (y) and the effect on hole-burning efficiency. We draw conclusions as below: In MyM′1-yFClxBr1-x:Sm2+ series, the 4f5d bands will be more close to the 5ＤJ level with the increase of the Br concentration and the concentration if snakk radium alkaline earth ion, and this situation makes the 5ＤJ—7Ｆ0 electron transition probability increase. By reasoning, the hole-burning efficiency of Sm2+ are expected to by enhanced.

Acta Physica Sinica•Jan 1, 1996•0 citations
In Sm2+ doped alkline earth halides, hole burning process is two step photoionization of Sm2+ following electron trapping [1]. The first step is using burning laser to excite electron of Sm2+ from the ground state 7F0 to the excited energy level 5DJ. The second step is using gating laser to excite the electron from the 5DJ level to the conduction band, where the free electron will be captured either by trap or by the ionized Sm2+ ion again. The overall process depends on the factors: excitation rate, the trapping rate and the recombination rate.
Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F0→5D0 and 7F0→5D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F0→5D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.
Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.
Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.
Persistent spectral hole burning in the $f\ensuremath{\rightarrow}f$ transition and changes in the $f\ensuremath{\rightarrow}d$ transition spectra upon laser irradiation were investigated in Sm2+{\mathrm{Sm}}^{2+}Sm2+-doped ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses prepared by a sol-gel process. The hole was burned in the ${}^{7}{F}_{0}{\ensuremath{\rightarrow}}^{5}{D}_{0}$ line of Sm2+{\mathrm{Sm}}^{2+}Sm2+ ions using a DCM dye laser at 77 K and the dependence of the burning efficiency on laser power and burning time was measured. The hole depth increased with increasing laser irradiation time, reaching up to $\ensuremath{\sim}12%$ of the total intensity within a few hundred seconds. Neither an antihole around the burned hole nor a change in the fluorescence line narrowing spectrum were observed after hole burning. The hole depth linearly increased with increasing the incident laser power up to $\ensuremath{\sim}1{\mathrm{W}/\mathrm{m}\mathrm{m}}^{2},$ indicating a single-photon hole-burning process. On the other hand, laser irradiation with a wavelength corresponding to the energy of the ${4f}^{6}\ensuremath{\rightarrow}{4f}^{5}5d$ transition resulted in a decrease of both the absorption and fluorescence intensities but no formation of a hole. It was concluded that the electrons excited in the 4f55d{4f}^{5}5d4f55d level were further excited into the conduction band of the host matrix by a two-photon absorption process and then captured in the trapping center.
By measuring the excitation spectra of the 4f5d bands and the fluorescent decays of the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability depending on temperature in MyM′1-yFClxBr1-x:Sm2+(M=Mg,Ca,Sr,Ba)series, we have studied the dependence of the energy separation between the 4f5d bands and the 5ＤJ level, the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability on the composition grade(x) and (y) and the effect on hole-burning efficiency. We draw conclusions as below: In MyM′1-yFClxBr1-x:Sm2+ series, the 4f5d bands will be more close to the 5ＤJ level with the increase of the Br concentration and the concentration if snakk radium alkaline earth ion, and this situation makes the 5ＤJ—7Ｆ0 electron transition probability increase. By reasoning, the hole-burning efficiency of Sm2+ are expected to by enhanced.