Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Electron transition process of 5D2→7F0 of Sm2+ in spectral hole-burning

Hongwei Song, Jiahua Zhang, Shihua Huang, Jiaqi Yu

Published Jan 1, 1994• 0 citations
Publisher

Abstract

Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.

DOI
10.1364/shbs.1994.wd24

Related papers

Inhomogeneous Broadening and Persistent Spectral Hole-Burning of Divalent Samarium Ions In Alkaline Earth Metal Halides

Jiahua Zhang, Xiangjun Wang, Shihua Huang +1 more

Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1991•0 citations

Spectral Hole-Burning Between 2 K and Room Temperature in Sm2+ Doped Substitutionally Disordered Microcrystals

Keith Holliday, Changjiang Wei, Mauro Croci +1 more

Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1991•0 citations

Persistent spectral hole burning and optical properties of Sm2+doped into Mg0.5Sr0.5FCl0.5Br0.5mixed crystal

Kiwan Jang, Il-Gon Kim, Hyo-Jin Seo +3 more

We measured the temperature dependence of the fluorescence of Sm 2+ ions doped into a Mg 0.5 Sr 0.5 FCl 0.5 Br 0.5 mixed crystal and observed the persistent spectral hole burning at 90 K and 300 K. The electrons appearing at the 5 D 0 → 7 F 0 transition mostly come via the 4f5d→ 5 D 1 → 5 D 0 → 7 F 0 route but some of the electrons come directly from the 4f5d band. At 90 K, persistent spectral hole burning was achieved much more efficiently by the photon-gated spectral hole-burning process than by the one-photon hole-burning process, while the one-photon hole-burning process is much more efficient at 300 K.

Journal of Physics Condensed Matter•Mar 15, 2001•0 citations

Trap Effect in Spctral Hole Burning of Sm2+ Doped Crystals

Jiahua Zhang, Ling‐Dong Sun, Weiping Qin +2 more

Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1992•0 citations

Room-Temperature Persistent Spectral Hole Burning in Sm2+:SrFCl0.5Br0.5

Raivo Jaaniso, Hans Bill

We report the first observation of spectral hole burning in the spectra of impurity centers at room temperature. The persistent holes are burned in the 5D17F0 (632 nm) and 5D0-7F0 (690 nm) transitions of Sm2+ ions in the title compound.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1991•0 citations

Room-temperature persistent spectral hole burning in SrFCl:Sm2+ films: Temporal and spatial response

Marc Schnieper, F. Trotta, S. Bersier +1 more

Persistent spectral hole burning was performed on the 7F0–5D1 transition of Sm2+ in thin films of SrFCl. Depending on the substrate and the growth conditions, a total hole depth between 47% and 70% was reached. The holes were Lorentzians of width 4(±0.3) cm−1. The time evolution of the hole depth was studied. It is described by two exponentials: a short time decay (t1=0.37 days) and a long time decay (t2=20.4 days) with a 20% infinite time limit. One- and two-photon burning mechanisms act.

Applied Physics Letters•Jul 5, 1999•10 citations
Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.
Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.
Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.
We measured the temperature dependence of the fluorescence of Sm 2+ ions doped into a Mg 0.5 Sr 0.5 FCl 0.5 Br 0.5 mixed crystal and observed the persistent spectral hole burning at 90 K and 300 K. The electrons appearing at the 5 D 0 → 7 F 0 transition mostly come via the 4f5d→ 5 D 1 → 5 D 0 → 7 F 0 route but some of the electrons come directly from the 4f5d band. At 90 K, persistent spectral hole burning was achieved much more efficiently by the photon-gated spectral hole-burning process than by the one-photon hole-burning process, while the one-photon hole-burning process is much more efficient at 300 K.
Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.