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Acta Physica Sinica

ELECTRON TRANSITION PROCESS OF MyM′1-yFClxBr1-x:Sm2+ AND SPECTRAL HOLE-BURNING EFFICIENCY

Hongwei Song, ZHANG JIA-HUA, ZHAO YU, Huang Shi-Hua, Jiaqi Yu, 中国科学院长春物理研究所激发态物理开放研究实验室

Published Jan 1, 1996• 0 citations
Publisher

Abstract

By measuring the excitation spectra of the 4f5d bands and the fluorescent decays of the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability depending on temperature in MyM′1-yFClxBr1-x:Sm2+(M=Mg,Ca,Sr,Ba)series, we have studied the dependence of the energy separation between the 4f5d bands and the 5ＤJ level, the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability on the composition grade(x) and (y) and the effect on hole-burning efficiency. We draw conclusions as below: In MyM′1-yFClxBr1-x:Sm2+ series, the 4f5d bands will be more close to the 5ＤJ level with the increase of the Br concentration and the concentration if snakk radium alkaline earth ion, and this situation makes the 5ＤJ—7Ｆ0 electron transition probability increase. By reasoning, the hole-burning efficiency of Sm2+ are expected to by enhanced.

DOI
10.7498/aps.45.1479

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By measuring the excitation spectra of the 4f5d bands and the fluorescent decays of the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability depending on temperature in MyM′1-yFClxBr1-x:Sm2+(M=Mg,Ca,Sr,Ba)series, we have studied the dependence of the energy separation between the 4f5d bands and the 5ＤJ level, the 5ＤJ—7Ｆ0（Ｊ＝２，１，０） transition probability on the composition grade(x) and (y) and the effect on hole-burning efficiency. We draw conclusions as below: In MyM′1-yFClxBr1-x:Sm2+ series, the 4f5d bands will be more close to the 5ＤJ level with the increase of the Br concentration and the concentration if snakk radium alkaline earth ion, and this situation makes the 5ＤJ—7Ｆ0 electron transition probability increase. By reasoning, the hole-burning efficiency of Sm2+ are expected to by enhanced.
We measured the temperature dependence of the fluorescence of Sm 2+ ions doped into a Mg 0.5 Sr 0.5 FCl 0.5 Br 0.5 mixed crystal and observed the persistent spectral hole burning at 90 K and 300 K. The electrons appearing at the 5 D 0 → 7 F 0 transition mostly come via the 4f5d→ 5 D 1 → 5 D 0 → 7 F 0 route but some of the electrons come directly from the 4f5d band. At 90 K, persistent spectral hole burning was achieved much more efficiently by the photon-gated spectral hole-burning process than by the one-photon hole-burning process, while the one-photon hole-burning process is much more efficient at 300 K.
Materials of MyM’1-yFClxBr1-x:Sm2+ have been widely applied in spectral hole-burning since the first observation of persistent spectral hole-burning in BaFCl:Sm2+ at 2K was reported by A. Winnaker, etc. in 1985[1]. From then on, hole-burning in BaFCl0.5Br0.5:Sm2+ at 77K[2] in SrFCl and Mg0.5Sr0.5FCl0.5Br0.5:Sm2+ at room temperature[3, 4] were reported. Room temperature hole-buring of Sm2+ in fluorohafnate glasses[5,6] were reported in recent years also. These materials are of potential use in high temperature hole- burning. But comparing to organic materials, they have lower hole- burning efficiency and narrower inhomogenous line width. In order to apply spetral hole- buring in frequency domain optical storage, it is important to improve these materials.
In Sm2+ doped alkline earth halides, hole burning process is two step photoionization of Sm2+ following electron trapping [1]. The first step is using burning laser to excite electron of Sm2+ from the ground state 7F0 to the excited energy level 5DJ. The second step is using gating laser to excite the electron from the 5DJ level to the conduction band, where the free electron will be captured either by trap or by the ionized Sm2+ ion again. The overall process depends on the factors: excitation rate, the trapping rate and the recombination rate.
Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.
Persistent spectral hole burning in the $f\ensuremath{\rightarrow}f$ transition and changes in the $f\ensuremath{\rightarrow}d$ transition spectra upon laser irradiation were investigated in Sm2+{\mathrm{Sm}}^{2+}Sm2+-doped ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses prepared by a sol-gel process. The hole was burned in the ${}^{7}{F}_{0}{\ensuremath{\rightarrow}}^{5}{D}_{0}$ line of Sm2+{\mathrm{Sm}}^{2+}Sm2+ ions using a DCM dye laser at 77 K and the dependence of the burning efficiency on laser power and burning time was measured. The hole depth increased with increasing laser irradiation time, reaching up to $\ensuremath{\sim}12%$ of the total intensity within a few hundred seconds. Neither an antihole around the burned hole nor a change in the fluorescence line narrowing spectrum were observed after hole burning. The hole depth linearly increased with increasing the incident laser power up to $\ensuremath{\sim}1{\mathrm{W}/\mathrm{m}\mathrm{m}}^{2},$ indicating a single-photon hole-burning process. On the other hand, laser irradiation with a wavelength corresponding to the energy of the ${4f}^{6}\ensuremath{\rightarrow}{4f}^{5}5d$ transition resulted in a decrease of both the absorption and fluorescence intensities but no formation of a hole. It was concluded that the electrons excited in the 4f55d{4f}^{5}5d4f55d level were further excited into the conduction band of the host matrix by a two-photon absorption process and then captured in the trapping center.