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Acta Optica Sinica

Photon-gated spectral hole burning study on inorganic material BaFCl_(0.5)Br_(0.5) : Sm~(2+)

Hongsheng Qian, Yu Jiaqi

Published Jan 1, 1993• 0 citations
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Abstract

Investigations of photon- gated spectral hole burning and its mechanism for the inorganic material BaFCl0.5Br0.5 : Sm2+ are presented. Multiple holes burning, hole erasing and repeatable hole burning were realized. Gating ratio and hole stability were also measured. The experimental results indicated that more than 1 × 103 persistent spectral holes within an inhomogeneously broadened absorption band of BaFCl0. 5Br0.5 : Sm2+ at low temperature of 4 K could be burned.

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Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.

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Europhysics Letters (EPL)•Oct 7, 1991•173 citations
Investigations of photon- gated spectral hole burning and its mechanism for the inorganic material BaFCl0.5Br0.5 : Sm2+ are presented. Multiple holes burning, hole erasing and repeatable hole burning were realized. Gating ratio and hole stability were also measured. The experimental results indicated that more than 1 × 103 persistent spectral holes within an inhomogeneously broadened absorption band of BaFCl0. 5Br0.5 : Sm2+ at low temperature of 4 K could be burned.
Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.
Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm2+ doped in BaFCl0.5Br0.5 matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl0.5Br0.5:Sm2+ the capacity of data storage was estimated according to the result of multiple hole burning.
Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.
We measured the temperature dependence of the fluorescence of Sm 2+ ions doped into a Mg 0.5 Sr 0.5 FCl 0.5 Br 0.5 mixed crystal and observed the persistent spectral hole burning at 90 K and 300 K. The electrons appearing at the 5 D 0 → 7 F 0 transition mostly come via the 4f5d→ 5 D 1 → 5 D 0 → 7 F 0 route but some of the electrons come directly from the 4f5d band. At 90 K, persistent spectral hole burning was achieved much more efficiently by the photon-gated spectral hole-burning process than by the one-photon hole-burning process, while the one-photon hole-burning process is much more efficient at 300 K.
Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.