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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Persistent Spectral Hole-Burning by cw lasers in Defect-Aggregates Induced by Particle Irradiation

R. Bauer, T. Attenberger, Ilmo Sildos, Udo Bogner, Max Maier

Published Jan 1, 1992• 0 citations
Publisher

Abstract

In different color centers of neutron- irradiated and annealed sapphire crystals persistent spectral holes could be burned which were thermoresistant up to 670K [1]. In the 755.6nm zero-phonon line (ZPL) two-color photon-gated persistent spectral hole-burning (PSHB) was obtained with pulsed dye-lasers [2]. Preliminary results of PSHB with a cw laser were reported for the 462.5nm ZPL [3]. The present study concerns a investigation of PSHB with cw-lasers in different ZPL, including the 755.6nm ZPL, which is interesting for potential applications in particular because diode lasers are available in this spectral range.

DOI
10.1364/shbl.1992.tub2

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In different color centers of neutron- irradiated and annealed sapphire crystals persistent spectral holes could be burned which were thermoresistant up to 670K [1]. In the 755.6nm zero-phonon line (ZPL) two-color photon-gated persistent spectral hole-burning (PSHB) was obtained with pulsed dye-lasers [2]. Preliminary results of PSHB with a cw laser were reported for the 462.5nm ZPL [3]. The present study concerns a investigation of PSHB with cw-lasers in different ZPL, including the 755.6nm ZPL, which is interesting for potential applications in particular because diode lasers are available in this spectral range.
With a ring dye laser persistent spectral hole-burning was measured by fluorescence excitation spectroscopy in the zero-phonon lines of the 2llg ↔ 2llu transition in KI:S2 − and of the 3H4 → 3P0 transition of a defect center with three D− ions in SrF2:Pr3+:D−and also in the zero-phonon line at 462.5 nm of a color center in neutron-irradiated and annealed α-Al2O3. In all three lines holes with a width in the order of 1 GHz could be obtained at 1.5 K with single frequency laser. With broad-band laser in KI:S2 − and SrF2:Pr3+:D− spectral redistribution within the full range of inhomogeneous broadening could be observed which are explained by a photophysical model based on barrier crossing in asymmetric double-well-potentials. In the case of sapphire a photobleaching process is dominant which is effective also for nonselective excitation, and the holes are thermoresistant up to 300 K.
A persistent spectral hole-burning technique has been employed to investigate the impact of uniaxial stress on the defects created by neutron irradiation in natural Ia-type diamond. Shifts of the spectral holes in the 649, 681, and 774 nm zero-phonon lines (ZPLs) have been measured. The values of the shifts, 2.2, 1.2, and 0.65 cm−1/kbar, obtained from these measurements have been compared with the stress shifts of the lines of defects with well-known structure. It is suggested that vacancies are present in the defect responsible for the 681 nm ZPL. A combination of the results of polarized luminescence and uniaxial stress experiments leads to the conclusion of rhombic I symmetry of the defects that give rise to the 649 and 681 nm ZPLs.
The persistent spectral hole-burning (PSHB) phenomenon has been known since 1974. It is still an important research area for the study of the intimacy of complex molecular systems in the solid state, revealing high-resolution spectra, photophysics, photochemistry, and dynamics of molecular doped amorphous media, organic as well as inorganic. From another point of view, PSHB allows the engraving of any spectral structures in the inhomogeneous absorption band profile of molecular doped amorphous hosts or ion doped crystals cooled down to liquid helium temperatures. Therefore, a PSHB material is programmable in the spectral domain and consequently it can be transformed in an optical processor capable of achieving user-defined optical functions. Some aspects of both fields are illustrated in the present paper. Concerning the search for efficient PSHB materials, the hole-burning performances and the photophysics of polymer and xerogel based systems are compared. The problem of high-temperature persistent spectral hole-burning materials and the search for new frequency selective photosensitive systems for fast optical pulse processing at 800nm are considered. Regarding the points treated, inorganic hosts based on silicate xerogels or porous glasses have shown the best results. Moreover, by combining inorganic and organic capabilities or by grafting organic species to the host, hybrid xerogels have not yet revealed all possibilities. Also, the interest of two-photon materials for engraving spectral features with near-infrared or infrared light is developed. As an introduction to possible applications of PSHB material, the basics of spectro-temporal holography are remembered and a demonstrative experiment using a naphthalocyanine-doped polymer film is described, proving that the temporal aberration free recompression of ultrashort light pulses is feasible, therefore opening a way for applications in ultrashort light pulse shaping. Aspects for a comparison between cw hole-burning and femtosecond spectro-temporal experiments are considered, and prospects for coherent control of light fields or photochemical processes are also evoked.
Persistent spectral hole burning (PSHB) is a new method in the laser spectroscopy of solids. This method is based on the existence of zero-phonon lines in the spectra of light-absorbing species, such as impurities (molecules, ions, etc.) or color centers in crystalline or amorphous materials. This chapter describes the electric field effects on persistent spectral holes and in particular special applications in electrooptics and photonics. It demonstrates that PSHB is useful not only for digital processes, such as data storage in the electric field domain, but also for analog processes concerning, in particular, the modulation and pulse forming of laser beams and hybrid optical bistability. The chapter also discusses the future prospects of the possible applications of PSHB and electric field effects. For future possible applications involving PSHB techniques in everyday appliances, it is important to provide room-temperature operation.