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Quantum Electronics and Laser Science Conference

Persistent photon-gated spectral hole burning in LiF:F/sub 2//sup -/ color center crystal

Vladimir Fedorov, Sergey Mirov, Michael S. Ashenafi, M. Liang

Published Nov 13, 2002• 0 citations
Publisher

Abstract

For the first time a persistent spectral-hole burning stable at room temperature was realized in LiF crystals with F/sub 2//sup -/ color centers. The Huang-Rhys factors and zero-phonon linewidth of F/sub 2//sup -/ color centers were studied at 14-350 K temperature range.
DOI
10.1109/qels.2001.962254

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Luminescence and absorption spectra of LiF crystals with F2− color centers (CCs) were studied in the 14–300 K temperature range. The Huang–Rhys factors measured from absorption and emission spectra were equal in magnitude and calculated to be 3.2 and 2.72 at 77 and 300 K, respectively. It was shown that below 40 K inhomogeneous broadening of the zero phonon line of the F2− CC prevails over homogeneous broadening. Inhomogeneous broadening of the zero phonon line was observed to vary from 5 to 15 cm−1 for different crystal preparations. Persistent spectral hole burning stable at room temperature was realized in LiF:F2− crystals.
Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.
Summary form only given. Using persistent spectral hole burning, rare-earth ions doped in crystalline or glassy matrices may prove useful in optical data storage. In the case of Sm/sup 2+/, persistent spectral hole burning is due to photoionization: the Sm/sup 2+/ is oxidized to form Sm/sup 3+/, and the ejected electron is trapped in the matrix. For applications, it is important to understand the trapping mechanism, to identify the nature of the traps, and to see whether they are stable at room temperature.
For next generation high density optical storage, extensive studies on persistent spectral hole burning (PSHB) have been performed, because they have a large potential for a high density frequency-domain optical data storage. PSHB has been observed at room temperature in Sm-doped crystals and glasses. Among them, glasses are considered to be more favorable than single crystals, due to their wide inhomogeneous line width and easy process for mass production. In the study, we developed a new glass mixture which shows room temperature PSHB with a inhomogeneous line width broadened up to 70 cm/sup -1/. The PSHB was characterized by investigating the time decay pattern of fluorescence and the excitation spectra.