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Conference on Lasers and Electro-Optics

Studies of persistent spectral hole burning in the CaF/sub 2/:Sm/sup 2+/ system

W. Beck, Vladimir Fedorov, D. Ricard, Christos Flytzanis

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Summary form only given. Using persistent spectral hole burning, rare-earth ions doped in crystalline or glassy matrices may prove useful in optical data storage. In the case of Sm/sup 2+/, persistent spectral hole burning is due to photoionization: the Sm/sup 2+/ is oxidized to form Sm/sup 3+/, and the ejected electron is trapped in the matrix. For applications, it is important to understand the trapping mechanism, to identify the nature of the traps, and to see whether they are stable at room temperature.

DOI
10.1109/iqec.1998.680501

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Summary form only given. Using persistent spectral hole burning, rare-earth ions doped in crystalline or glassy matrices may prove useful in optical data storage. In the case of Sm/sup 2+/, persistent spectral hole burning is due to photoionization: the Sm/sup 2+/ is oxidized to form Sm/sup 3+/, and the ejected electron is trapped in the matrix. For applications, it is important to understand the trapping mechanism, to identify the nature of the traps, and to see whether they are stable at room temperature.
Summary form only given. Persistent spectral hole burning (PSHB) of rare-earth-doped inorganic materials has attracted much attention in view of application to high-density optical memories. In particular, it seems that the glass materials are advantageous for application in wavelength-selective optical devices, as well as the memory devices, because of their large inhomogeneous linewidth. The wavelength-selective devices are key components in the wavelength-division multiplexing system, which is important for the next-generation optical communication technology. The problem for practical application lies in the fact that PSHB of rare-earth ions in glasses is usually observed only at temperature below 20 K. However, room-temperature PSHB has been observed recently for Sm/sup 2+/-doped crystals and glasses.
Persistent spectral hole burning is observed in Sm(2+)-doped glasses at room temperature. The holes are burned in the (7)F(0) ? (5)D(0), (5)D(1) lines of the Sm(2+) ions in three kinds of fluoride glass. The dependence of the burning efficiency on the sample and on the burning intensity is measured. The intensity dependence is approximately linear, and no antihole is observed around the burned hole. The hole-burning mechanism is discussed. The temperature dependence of the homogeneous width is also measured.
The persistent spectral hole-burning phenomenon was investigated for Sm2+ ions-doped Al2O3-SiO2 glasses prepared by the sol-gel method. The efficiency of hole-burning, burned at low temperature ~77K, was proportionally increased with the content of OH groups surrounding the rare-earth ions. The proposed mechanism for hole-burning was the optically activated rearrangement of the OH bonds surrounding the rare-earth ions. The burned-hole was thermally refilled and erased above ~200 K. On the other hand, the glasses obtained by heating in H2 gas or irradiating with x-rays showed PSHB up to room temperature. When heated in H2 gas, the H2 molecules react with oxygen ions to form H2O. Removal of the generated H2O causes the number of oxygen ions surrounding rare-earth ions to decrease, resulting into the reduction of the ions. The hole burning in the H2-treated glasses was performed by the electron transfer between the rare-earth ions and the trapping centers. In contrast, in the x-ray irradiated glass, it was concluded that the rear-earth ions are deuced into the divalent state by electron transfer from the oxygen defect center. The hole defect centers are trapped in oxygen ions bound with Al3+ ions. The spectral hole burning of the x-ray irradiated glasses could be burned by the reverse reaction of the reduction of the rare-earth ions. A short distance between the Sm2+ and oxygen defect centers brought a high-speed hole burning, that is, 30 times faster than in a similar H2 gas treated glass.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.