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Applied Physics Letters

Room-temperature persistent spectral hole burning in Sm-doped KLaF4 crystals

Nobuhiro Kodama, Tomoko Takahashi, Kazuyuki Hirao

Published Mar 30, 1998• 7 citations
Publisher

Abstract

Persistent spectral hole burning is observed at room temperature in the excitation spectrum for the F07→D05 transition of Sm2+ in KLaF4 single crystals. The hole width and depth are about 10 cm−1 and 18% of the total intensity, respectively. It is concluded that the dominant burning mechanism in this crystal is a photoionization of electron trapping at a site other than Sm3+ ions because of the absence of an antihole around the burned hole.

DOI
10.1063/1.120578

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Applied Physics Letters•Jul 5, 1999•10 citations
Persistent spectral hole burning is observed at room temperature in the excitation spectrum for the F07→D05 transition of Sm2+ in KLaF4 single crystals. The hole width and depth are about 10 cm−1 and 18% of the total intensity, respectively. It is concluded that the dominant burning mechanism in this crystal is a photoionization of electron trapping at a site other than Sm3+ ions because of the absence of an antihole around the burned hole.
Persistent spectral hole burning is observed in Sm(2+)-doped glasses at room temperature. The holes are burned in the (7)F(0) ? (5)D(0), (5)D(1) lines of the Sm(2+) ions in three kinds of fluoride glass. The dependence of the burning efficiency on the sample and on the burning intensity is measured. The intensity dependence is approximately linear, and no antihole is observed around the burned hole. The hole-burning mechanism is discussed. The temperature dependence of the homogeneous width is also measured.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.
We reported the first observation of room-temperature persistent spectral hole burning in Sm2+-doped fluoride glass in the last conference [1]. Room-temperature hole burning had been also observed in Sm2+-doped crystals [2]. We found considerable differences in the hole-burning characteristics between Sm2+-doped glasses and Sm2+-doped crystals: The burning-laser-intensity dependence is approximately linear, and no antihole is observed around the hole burned in Sm2+-doped glasses [3]. More detailed experimental studies are needed to clarify the mechanism of the hole burning in this glass and to explore more efficient hole-burning systems. In this paper, we report several experimental results related to wavelength dependence of the hole burning process.
Since the first observation of persistent photon gated spectral hole burning in BaFCl:Sm2+ at liquid helium temperature[1], the successful improvement on this material has been performed in our laboratory by adding bromine and alkline earth metals in the melt to form MyM'1-yFClxBr1-x:Sm (M,M'=Mg, Ca, Sr, Ba; x,y=0-1) system, in which the inhomogeneous line is broadened significantly[2-5] and room temperature hole burning is realized [6]. The hole burning mechanism is found to be photoionization of Sm2+ followed by electron trapping[1]. A kind of principal electron trap is considered to be Sm3+[1], which brings about hole refilling in the holes burnt formerly as burning the next hole because the generated Sm3+ corresponding to the former holes can trap electrons again released in the next hole burning[7]. That means, writing will erase the stored information. To avoiding this effect, introducing an other kind of trap different from Sm3+ for hole burning is necessary In the present paper, we report the results of hole burning in Sm singly doped and Sm, Yb doubly doped SrFCl crystals at 77K and room temperature. Two different trap effects in hole burning are observed and discussed.