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Annual Meeting Optical Society of America

Optical bistability in semiconductor CdHgTe etalon

Qiuhu Shi, Ya-wen Yang

Published Jan 1, 1991• 0 citations

Abstract

We have observed bistability of the n-type Cd x Hg1− x Te in Auger-dominated in the following conditions: the input probe beam, obtained by splitting the CO2 laser with a ZnSe splitter, was incident upon the CdHgTe detector 1. The output probe beam, passing through the Fabry-Perot etalon, was detected by the CdHgTe detector 2. All beams were chopped using a mechanical chopper with a tunable mark/space ratio between 20:1 at a high speed synchronous motor. The signals of the incident and transmission intensity synchronously detected by using the CdHgTe detectors at 77 K were displayed on an oscilloscope. Our specimen was n-type Cd x Hg1− x Te (x = 0.225) at 77 K, the intrinsic carrier concentration n = 9.8 × 1014 cm-3, the mobility μ = 3.15 × 104 (cm2/V sec). The absorption coefficient α = 72 cm was polished plane parallel to form an etalon 215 μm thick, the reflectivities of which are R F = R B = R = 32%. In our experiment, the incident intensity I is 750 W/cm2 and both the laser mode and power stability met the standards.

DOI: 10.1364/oam.1991.thmm50

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Many authors have experimentally examined the nonlinearities of HgCdTe at resonance with the CO2 laser wavelength [1]. At room temperature non1inearities of electronic origin, arising from band filling, are weak because of Auger recombination and are masked by thermal effects. In this communication we extend the analysis of ref. 1 on thermally induced optical bistability at low power: we show, for the first time in HgCdTe, the appearance of clockwise hysteresis cycles in transmission as input power Pi is increased, due to nonlinear absorption. We can account for both absorptive and refractive nonlinear contributions by simultaneous monitoring of transmission and reflection. The Hg0.815Cd0.185Te plates (280 um in thickness, with doping pa =1*1016 cm-3, prepared and polished by Elettronica SpA) were placed without heatsinking in a thermally controlled environment. In Fig. 1 the transmitted (Pt) and reflected (Pr) power is shown as a function of Pi: the three data sets differ in cavity mistuning. The thermooptic effect was measured directly, by a close focus optical pyrometer, and indirectly by taking data at different thermal bath temperature T. The values of Pi at the hysteresis associated to a given cavity interference order (indicated with the symbols of Fig. 1c) drift with T (Fig. 2): the maximum induced temperature increase is inferred to be 30-35°C, with steps of 2.5-3.5°C at the switching points, and a value of dn/dT = -2.8*10-3 K-1 is deduced. Fig. 3 presents numerical results (to be compared with Fig. 1b) obtained parametrically solving the nonlinear Fabry Perot equations using the absorption measured after AR coating one sample face. This nonlinear absorption will be discussed in terms of a free carrier origin.

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