Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Optical switching in a CdHgTe étalon at room temperature

Jinesh Mathew, D. Craig, Alan Miller

Published Jan 15, 1985• 16 citations
Publisher

Abstract

We report optical switching (dynamic optical bistability) in a 200-μm-thick, uncoated Cd0.23Hg0.77Te étalon at room temperature by two-photon excitation with a short pulse CO2 laser at 10.6 μm.
DOI
10.1063/1.95709

Related papers

Two photon induced optical bistability in CdHgTe at room temperature

D. Craig, Ajoy Kumar Kar, Jinesh Mathew +1 more

We report the first observation of quasi-steady state optical bistability in a 360 μm thick, uncoated Cd0.23Hg0.77Te etalon at room temperature as a result of the generation of free carriers through two photon absorption of pulsed 10.6 μm radiation from a hybrid TEA CO2laser (FWHM = 1.75 μs). The experimental results are compared with the predictions of a computer model.

IEEE Journal of Quantum Electronics•Sep 1, 1985•25 citations

Optical bistability in semiconductor CdHgTe etalon

Qiuhu Shi, Ya-wen Yang

We have observed bistability of the n-type Cd x Hg1− x Te in Auger-dominated in the following conditions: the input probe beam, obtained by splitting the CO2 laser with a ZnSe splitter, was incident upon the CdHgTe detector 1. The output probe beam, passing through the Fabry-Perot etalon, was detected by the CdHgTe detector 2. All beams were chopped using a mechanical chopper with a tunable mark/space ratio between 20:1 at a high speed synchronous motor. The signals of the incident and transmission intensity synchronously detected by using the CdHgTe detectors at 77 K were displayed on an oscilloscope. Our specimen was n-type Cd x Hg1− x Te (x = 0.225) at 77 K, the intrinsic carrier concentration n = 9.8 × 1014 cm-3, the mobility μ = 3.15 × 104 (cm2/V sec). The absorption coefficient α = 72 cm was polished plane parallel to form an etalon 215 μm thick, the reflectivities of which are R F = R B = R = 32%. In our experiment, the incident intensity I is 750 W/cm2 and both the laser mode and power stability met the standards.

Annual Meeting Optical Society of America•Jan 1, 1991•0 citations

Optical Nonlinearity and Fast Switching in PbSnTe Fabry‐Perot Etalon

T. Paskova, Lubomir I. Pavlov, Petar Asenov Atanasov +2 more

Abstract Optical bistability is observed in a PbSnTe etalon at room temperature by two‐photon exitation with tunable TEA CO2 laser. The experimental results are compared with a numerical model which also takes into account the heating of the sample.

physica status solidi (b)•Dec 1, 1988•1 citation

Dynamic behavior and response-time control of two-photon optical bistability in InSb at 10.6 µm wavelength

Wei Ji, Ajoy Kumar Kar, Peter L. Chua +1 more

A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO2laser. Good agreement can be obtained between this semi-empirical theory and experiment. The reduction of switching times to ∼ 1 ns by n-type doping has been demonstrated experimentally.

IEEE Journal of Quantum Electronics•Nov 1, 1987•1 citation

Quasi-CW optical bistability in InSb at room temperature

Wei Ji, Ajoy Kumar Kar, Jinesh Mathew +1 more

We report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two photon absorption of 10 μm radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.

IEEE Journal of Quantum Electronics•Feb 1, 1986•21 citations

Picojoule, subnanosecond all-optical switching in a CdS etalon

M. Dagenais, Wayne F. Sharfin

We report the fastest ON/OFF switching bistable optical device yet demonstrated. The device consists of a 13-μm thick CdS platelet in a Fabry-Perot cavity formed by two external mirrors with 90% reflectivity. Very well-defined OM and OFF states with switching times of < 1 nsec (ON) and 2 nsec (OFF) are observed when the laser frequency is tuned to within about one halfwidth below the inhomogeneously broadened bound exciton resonance in CdS. In Fig. 1, the Input and output pulse forms are shown revealing the fast switching.

Conference on Lasers and Electro-Optics•Jan 1, 1985•0 citations
We have observed bistability of the n-type Cd x Hg1− x Te in Auger-dominated in the following conditions: the input probe beam, obtained by splitting the CO2 laser with a ZnSe splitter, was incident upon the CdHgTe detector 1. The output probe beam, passing through the Fabry-Perot etalon, was detected by the CdHgTe detector 2. All beams were chopped using a mechanical chopper with a tunable mark/space ratio between 20:1 at a high speed synchronous motor. The signals of the incident and transmission intensity synchronously detected by using the CdHgTe detectors at 77 K were displayed on an oscilloscope. Our specimen was n-type Cd x Hg1− x Te (x = 0.225) at 77 K, the intrinsic carrier concentration n = 9.8 × 1014 cm-3, the mobility μ = 3.15 × 104 (cm2/V sec). The absorption coefficient α = 72 cm was polished plane parallel to form an etalon 215 μm thick, the reflectivities of which are R F = R B = R = 32%. In our experiment, the incident intensity I is 750 W/cm2 and both the laser mode and power stability met the standards.
We report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two photon absorption of 10 μm radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.
We report the fastest ON/OFF switching bistable optical device yet demonstrated. The device consists of a 13-μm thick CdS platelet in a Fabry-Perot cavity formed by two external mirrors with 90% reflectivity. Very well-defined OM and OFF states with switching times of < 1 nsec (ON) and 2 nsec (OFF) are observed when the laser frequency is tuned to within about one halfwidth below the inhomogeneously broadened bound exciton resonance in CdS. In Fig. 1, the Input and output pulse forms are shown revealing the fast switching.