Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of Quantum Electronics

Dynamic behavior and response-time control of two-photon optical bistability in InSb at 10.6 µm wavelength

Wei Ji, Ajoy Kumar Kar, Peter L. Chua, Andrew Walker

Published Nov 1, 1987• 1 citation
Publisher

Abstract

A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO2laser. Good agreement can be obtained between this semi-empirical theory and experiment. The reduction of switching times to ∼ 1 ns by n-type doping has been demonstrated experimentally.

DOI
10.1109/jqe.1987.1073243

Related papers

Quasi-CW optical bistability in InSb at room temperature

Wei Ji, Ajoy Kumar Kar, Jinesh Mathew +1 more

We report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two photon absorption of 10 μm radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.

IEEE Journal of Quantum Electronics•Feb 1, 1986•21 citations

Dynamic Optical Bistability in A Semiconductor Doped Glass Etalon

Chunfei Li, Yinglin Song, Zha Zizhong +1 more

In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.

Nonlinear Dynamics in Optical Systems•Jan 1, 1992•0 citations

InSb devices: transphasors with high gain, bistable swtiches and sequential logic gates

Andrew Walker, Frank A. P. Tooley, Michael E. Prise +4 more

Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).

Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences•Dec 18, 1984•38 citations

Cascaded Bistable Optical Devices Based on Two Photon Absorption in Room Temperature InSb

Wei Ji, Ajoy Kumar Kar, Ursula Keller +2 more

InSb at room temperature exhibits significant dispersive nonlinearity at 10 μm as a result of generation of free carriers by a two-photon absorption process(1). This has enabled us to study optical bistability in InSb at room temperature using pulsed CO2 laser radiation(2).

Topical Meeting on Optical Bistability (OB)•Jan 1, 1985•0 citations

Optical switching in a CdHgTe étalon at room temperature

Jinesh Mathew, D. Craig, Alan Miller

We report optical switching (dynamic optical bistability) in a 200-μm-thick, uncoated Cd0.23Hg0.77Te étalon at room temperature by two-photon excitation with a short pulse CO2 laser at 10.6 μm.

Applied Physics Letters•Jan 15, 1985•16 citations

Time dependent analysis of active and passive optical bistability in semiconductors

M.J. Adams

A time-dependent theory of optical bistability is developed and applied to laser amplifiers and passive semiconductor etalons. Results of the theory show an output intensity spike in switch-up which occurs after a time delay determined largely by the carrier recombination time, and before which the transition is unstable. Although for passive etalons the spike is rather broad (of order 1 ns for parameters appropriate to GaAs at 0.85 μm or InGaAsP at 1.55 μm) and of low amplitude, for amplifiers it is roughly an order of magnitude narrower and higher in amplitude. As a consequence, it is predicted that clock speeds for semiconductor bistable switching elements will be limited to rates commensurate with the carrier recombination time, not only for switch-down operations (as already well known) but also for switch-up operations.

IEE Proceedings J Optoelectronics•Jan 1, 1985•45 citations
A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO2laser. Good agreement can be obtained between this semi-empirical theory and experiment. The reduction of switching times to ∼ 1 ns by n-type doping has been demonstrated experimentally.
We report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two photon absorption of 10 μm radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.
In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.
Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).
A time-dependent theory of optical bistability is developed and applied to laser amplifiers and passive semiconductor etalons. Results of the theory show an output intensity spike in switch-up which occurs after a time delay determined largely by the carrier recombination time, and before which the transition is unstable. Although for passive etalons the spike is rather broad (of order 1 ns for parameters appropriate to GaAs at 0.85 μm or InGaAsP at 1.55 μm) and of low amplitude, for amplifiers it is roughly an order of magnitude narrower and higher in amplitude. As a consequence, it is predicted that clock speeds for semiconductor bistable switching elements will be limited to rates commensurate with the carrier recombination time, not only for switch-down operations (as already well known) but also for switch-up operations.