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Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences

InSb devices: transphasors with high gain, bistable swtiches and sequential logic gates

Andrew Walker, Frank A. P. Tooley, Michael E. Prise, Jinesh Mathew, Ajoy Kumar Kar, Mohammad Reza Taghizadeh, Stanley Desmond Smith

Published Dec 18, 1984• 38 citations
Publisher

Abstract

Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).

DOI
10.1098/rsta.1984.0103

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Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).
We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.
Detailed results are presented of two-beam optical transistor (transphasor) studies in a single InSb etalon using a CW CO laser to provide the bias beam and a Pb S1-xSExdiode laser to generate a modulated signal. The gain-bandwidth product has been measured to be ∼ 1.2 MHz for gain values ≥ 3 and is reduced at lower gain. A full expression for the absolute value of the optical gain is derived and shows good agreement with these results. An experimental method to estimate the device and material response time through the gain/ frequency dependence is presented. A medium response time of 230 ns ± 10 percent has been deduced for the conditions of these experiments.
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.
Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K,n_{2} \simeq 3 \times 10^{-3}cm2/W [corresponding to an effective\chi^{(3)} \sim 1ESU] is measured and OB is observed at ∼8 mW. Transphasor action at 5 K is presented and the influence of degenerate four-wave mixing is discussed. The basic physics of the microscopic mechanism for n2(bandgap-resonant saturation) is summarized and a simplified, generalized model is derived. This model and arguments on cavity optimization are used to predict order of magnitude limits to switching power, energy, and speed, both in InSb and other semiconductors, even in the absence of excitonic enhancement.