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Nonlinear Dynamics in Optical Systems

Dynamic Optical Bistability in A Semiconductor Doped Glass Etalon

Chunfei Li, Yinglin Song, Zha Zizhong, Lei Zhang

Published Jan 1, 1992• 0 citations
Publisher

Abstract

In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.

DOI
10.1364/nldos.1992.tuc19

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In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.
Glasses doped with semiconductor microcrystalline CdS x Se1- x (10 nm – 100 nm in dimension) have recently attracted muuch interest due to their large third-order nonlinearities and fast response times. Jain and Lind have been reported the third-order nonlinear susceptibilities χ(8) of CdS x Se1- x -doped glasses were measured to be 10-9–10-8 esu in a degenerate four-wave mixing (DFWM) experiment and that the origin of the nonlinearity can be attributed to the generation of a short-live electron-hole plasma (band-filling effect)1. The nonlinear response of CdS x Se1- x -doped glass has been got to be about 3.5 ps2. So it has great potential to be used in developing high-speed and low-power nonlinear optical devices. Junji Yumoto8 observed the optical bistablility made using an external Fabry-Perot (F-P) cavity containing CdS x Se1- x -doped glasses with bistable-switching time of 25 ps. In this paper we report the observation of optical bistability of an internal F-P cavity structure single-mode waveguide device made of CdS x Se1−x-doped glass.
A time-dependent theory of optical bistability is developed and applied to laser amplifiers and passive semiconductor etalons. Results of the theory show an output intensity spike in switch-up which occurs after a time delay determined largely by the carrier recombination time, and before which the transition is unstable. Although for passive etalons the spike is rather broad (of order 1 ns for parameters appropriate to GaAs at 0.85 μm or InGaAsP at 1.55 μm) and of low amplitude, for amplifiers it is roughly an order of magnitude narrower and higher in amplitude. As a consequence, it is predicted that clock speeds for semiconductor bistable switching elements will be limited to rates commensurate with the carrier recombination time, not only for switch-down operations (as already well known) but also for switch-up operations.
We report the optical bistability in CdS x Se 1- x -doped glass channel waveguide with rise and fall times of about 24 and 30 ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3 mW. The third-order nonlinear susceptibility (χ (3) ) of CdS x Se 1- x -doped glass is estimated experimentally to be 1.8 × 10 -9 esu. The high speed switching and the value of χ (3) show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.
In this work, the external switching dynamics of a Fabry-Perot etalon are studied via optical bistability system simulation. The simulated set-up of this investigation consists of two laser beams; the first beam is continuous (CW) which is considered as a biasing beam and capable of holding the bistable system for a certain range, which we are interested in, from a point that is very close self-switching to a point where the switching is unachievable. The second beam is modulated by passing the first beam through an acousto-optic modulator (AOM) to produce pulses with a minimum rise time and is used as an external source (coherent switching). In this work, we obtained the optical bistable loops by applying absorption coefficient (α) = 20cm-1, e sample etalon thickness (D) = 110μm, forward mirror reflectivity (Rf) = 0.6, and backward mirror reflectivity (Rb) = 0.95. The steady state characteristic of an initial detuning of the cavity (φ0) = 0.8 was studied at the conditions of no external input pulse intensity (M(t) = 0) and switching that takes place at Is(ON)= 0.57mW and Is(OFF) = 0.4mW.