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Acta Physica Sinica (Overseas Edition)

Studies on the dynamics of optical bistability switching in the internal Fabry-Perot cavity with a CdS x Se 1- x -doped glass channel waveguide

Wenji Peng, Qingxing Li, Yu Zhenxin, Ning An, Xu Mai

Published Nov 1, 1992• 1 citation
Publisher

Abstract

We report the optical bistability in CdS x Se 1- x -doped glass channel waveguide with rise and fall times of about 24 and 30 ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3 mW. The third-order nonlinear susceptibility (χ (3) ) of CdS x Se 1- x -doped glass is estimated experimentally to be 1.8 × 10 -9 esu. The high speed switching and the value of χ (3) show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.

DOI
10.1088/1004-423x/1/3/004

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physica status solidi (b)•Apr 1, 1995•3 citations
We report the optical bistability in CdS x Se 1- x -doped glass channel waveguide with rise and fall times of about 24 and 30 ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3 mW. The third-order nonlinear susceptibility (χ (3) ) of CdS x Se 1- x -doped glass is estimated experimentally to be 1.8 × 10 -9 esu. The high speed switching and the value of χ (3) show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.
Glasses doped with semiconductor microcrystalline CdS x Se1- x (10 nm – 100 nm in dimension) have recently attracted muuch interest due to their large third-order nonlinearities and fast response times. Jain and Lind have been reported the third-order nonlinear susceptibilities χ(8) of CdS x Se1- x -doped glasses were measured to be 10-9–10-8 esu in a degenerate four-wave mixing (DFWM) experiment and that the origin of the nonlinearity can be attributed to the generation of a short-live electron-hole plasma (band-filling effect)1. The nonlinear response of CdS x Se1- x -doped glass has been got to be about 3.5 ps2. So it has great potential to be used in developing high-speed and low-power nonlinear optical devices. Junji Yumoto8 observed the optical bistablility made using an external Fabry-Perot (F-P) cavity containing CdS x Se1- x -doped glasses with bistable-switching time of 25 ps. In this paper we report the observation of optical bistability of an internal F-P cavity structure single-mode waveguide device made of CdS x Se1−x-doped glass.
In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.
We designed and manufactured an optical bistability waveguide device based on nonlinear one-dimensional photonic crystal used CdS_xSe_(1-x) doped glass. This kind of semiconductor doped glass has large nonlinear refractive index and nonlinear fast response time. The distribution of refractive index of the nonlinear one-dimensional photonic crystal waveguide satisfies sine function. We obtained the nonlinear photonic crystal waveguide by exposure holography and etching techniques. Length of the photonic crystal waveguide is about 3 mm. The height of the peak-groove of the waveguide is 0.1 μm. According to our design, the center of bandgap of the one-dimensional photonic crystal lies at 514.5 nm while the power density of the incident light, the incident light was reflected by the photonic crystal. When the power density of the incident light increasing, the bandgap is shifting to the direc-tion of short wavelength due to the decreasing of the refractive index with the increasing of the incident power density, so more incident light is transmitted. In experiment, we used an active mode-locking pulse of Ar ion laser as the light source which wavelength is 514.5 nm, repeating frequency is 82 MHz and pulse width is 200 ps. The light beam was coupled into the device by prism with a laser average power of 1.28 W (in the case of nonlinear saturation operation, optimum coupling efficiency is about 6%). Pulse wave forms of incident light and transmitted from sample were recorded in turn by 7 904 oscilloscope. The optical bistability curve of input power density and output one is fitted by computer. We obtained the threshold power density of bistable switch to be 1.60×10~5 W/cm~2 (it is equivalent to average power of 77 mW) and both the rise and fall time are 63 ps. We used the Finite Difference Time Domain Method to obtain the characteristics of the bandgap shift with the incident power density increasing of the nonlinear photonic crystal and calculate the optical bistability curve of this device. In theory, the threshold power density of bistable switch is about 1.40×10~5 W/cm~2 and the switch time is about 50 ps. The theoretical results agree well with the experimental ones. This device is a new and feasible one for optical information process and optical computing in the future.
Nonlinear semiconductor waveguides are investigated with respect to their use for optical bistability and temporal optical switching with results given for silicon-on-sapphire devices. The performance of the waveguides is assessed with comparisons to nonlinear Fabry-Perot cavities, and the conditions for optical bistability are theoretically shown to be possible by combining a waveguide and a diffraction-grating coupler. Structures experimentally investigated include semiconductor layers epitaxially grown on substrates having low refractive indices. Optical switching is reported on reflected or transmitted beams and on the guided-wave intensity by means of excitation pulses in the nanosecond or picosecond range. The data confirm the usefulness of nonlinear waveguides as alternative devices for temporal optical switching and logic-gate development in part due to their good switching times.
Abstract Nonlinear optical transmission in unintentionally or lightly doped CdS crystals is studied theoretically and experimentally near the band gap. A spatially homogeneous three‐level model is developed which explains the observed optical switching process and its dependence upon incident intensity, wavelength, lattice temperature, and surface reflectivity. It is shown that the switching is due to the dynamics of the generation‐recombination processes involving donors, acceptors, and the conduction band, and not due to transmissive optical bistability.