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Nonlinear Optics

Studies on the Dynanics of Optical Bistability Swithing in the Internal Fabry-Perot Cavity CdSxSe1-x-Doped Glass Waveguide Device

Wenji Peng, Qingxing Li, Z. X. Yu, Ning An, Xu Mai

Published Jan 1, 1992• 0 citations
Publisher

Abstract

Glasses doped with semiconductor microcrystalline CdS x Se1- x (10 nm – 100 nm in dimension) have recently attracted muuch interest due to their large third-order nonlinearities and fast response times. Jain and Lind have been reported the third-order nonlinear susceptibilities χ(8) of CdS x Se1- x -doped glasses were measured to be 10-9–10-8 esu in a degenerate four-wave mixing (DFWM) experiment and that the origin of the nonlinearity can be attributed to the generation of a short-live electron-hole plasma (band-filling effect)1. The nonlinear response of CdS x Se1- x -doped glass has been got to be about 3.5 ps2. So it has great potential to be used in developing high-speed and low-power nonlinear optical devices. Junji Yumoto8 observed the optical bistablility made using an external Fabry-Perot (F-P) cavity containing CdS x Se1- x -doped glasses with bistable-switching time of 25 ps. In this paper we report the observation of optical bistability of an internal F-P cavity structure single-mode waveguide device made of CdS x Se1−x-doped glass.

DOI
10.1364/nlo.1992.we24

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Glasses doped with semiconductor microcrystalline CdS x Se1- x (10 nm – 100 nm in dimension) have recently attracted muuch interest due to their large third-order nonlinearities and fast response times. Jain and Lind have been reported the third-order nonlinear susceptibilities χ(8) of CdS x Se1- x -doped glasses were measured to be 10-9–10-8 esu in a degenerate four-wave mixing (DFWM) experiment and that the origin of the nonlinearity can be attributed to the generation of a short-live electron-hole plasma (band-filling effect)1. The nonlinear response of CdS x Se1- x -doped glass has been got to be about 3.5 ps2. So it has great potential to be used in developing high-speed and low-power nonlinear optical devices. Junji Yumoto8 observed the optical bistablility made using an external Fabry-Perot (F-P) cavity containing CdS x Se1- x -doped glasses with bistable-switching time of 25 ps. In this paper we report the observation of optical bistability of an internal F-P cavity structure single-mode waveguide device made of CdS x Se1−x-doped glass.
We report the optical bistability in CdS x Se 1- x -doped glass channel waveguide with rise and fall times of about 24 and 30 ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3 mW. The third-order nonlinear susceptibility (χ (3) ) of CdS x Se 1- x -doped glass is estimated experimentally to be 1.8 × 10 -9 esu. The high speed switching and the value of χ (3) show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.
In the past decade, experimental results of transient optical bistabilities in etalons of CdSxSe1-x doped glasses have been presented by many authors[1-3]. Switching speed of ns to ps orders has been obtained. However, there still do not exist a dynamics theory of this transient optical bistability. This paper emphasizes the dependence of the implementation of transient optical bistabilities on the incident pulse width, the media response time, the FP cavity establishing time, and also, the influence of the incident pulse width on the switching speed.
We designed and manufactured an optical bistability waveguide device based on nonlinear one-dimensional photonic crystal used CdS_xSe_(1-x) doped glass. This kind of semiconductor doped glass has large nonlinear refractive index and nonlinear fast response time. The distribution of refractive index of the nonlinear one-dimensional photonic crystal waveguide satisfies sine function. We obtained the nonlinear photonic crystal waveguide by exposure holography and etching techniques. Length of the photonic crystal waveguide is about 3 mm. The height of the peak-groove of the waveguide is 0.1 μm. According to our design, the center of bandgap of the one-dimensional photonic crystal lies at 514.5 nm while the power density of the incident light, the incident light was reflected by the photonic crystal. When the power density of the incident light increasing, the bandgap is shifting to the direc-tion of short wavelength due to the decreasing of the refractive index with the increasing of the incident power density, so more incident light is transmitted. In experiment, we used an active mode-locking pulse of Ar ion laser as the light source which wavelength is 514.5 nm, repeating frequency is 82 MHz and pulse width is 200 ps. The light beam was coupled into the device by prism with a laser average power of 1.28 W (in the case of nonlinear saturation operation, optimum coupling efficiency is about 6%). Pulse wave forms of incident light and transmitted from sample were recorded in turn by 7 904 oscilloscope. The optical bistability curve of input power density and output one is fitted by computer. We obtained the threshold power density of bistable switch to be 1.60×10~5 W/cm~2 (it is equivalent to average power of 77 mW) and both the rise and fall time are 63 ps. We used the Finite Difference Time Domain Method to obtain the characteristics of the bandgap shift with the incident power density increasing of the nonlinear photonic crystal and calculate the optical bistability curve of this device. In theory, the threshold power density of bistable switch is about 1.40×10~5 W/cm~2 and the switch time is about 50 ps. The theoretical results agree well with the experimental ones. This device is a new and feasible one for optical information process and optical computing in the future.
Optical bistability (OB) is capable of rapidly and reversibly transforming a parameter of an optical signal from one state to another, and homologous nonlinear optical bistable devices are core components of high-speed all-optical communication and all-optical networks. In this paper, we theoretically investigated the controllable OB from a Fabry–Pérot (FP) cavity with a nonlinear three-dimensional Dirac semimetal (3D DSM) in the terahertz band. The OB stems from the third-order nonlinear bulk conductivity of the 3D DSM and the resonance mode has a positive effect on the generation of OB. This FP cavity structure is able to tune the OB because the transmittance and the reflectance can be modulated by the Fermi energy of the 3D DSM. We believe that this FP cavity configuration could provide a reference concept for realizing tunable bistable devices.
Most of the intrinsic optical devices which have been studied in recent years consist of a Fabry-Perot resonator containing a nonlinear medium. The response time of such devices is determined by the transients associated with the high-Q resonator and the response time of the nonlinear medium. The fastest devices must be free of any Fabry-Perot cavity. The excitation of either surface plasmons at a nonlinear interface or guided waves in thin nonlinear films is a way to obtain an ultrafast bistable optical device. These two kinds of device have been studied.
Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.