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Topical Meeting on Optical Bistability (OB)

Nonlinear Refraction and Increasing Absorption in HgCdTe Optical Bistability at Room Temperature: an Experimental Study

Peter Coppo, S. Cecchi, P. Salieri, F. T. Arecchi

Published Jan 1, 1988• 0 citations
Publisher

Abstract

Many authors have experimentally examined the nonlinearities of HgCdTe at resonance with the CO2 laser wavelength [1]. At room temperature non1inearities of electronic origin, arising from band filling, are weak because of Auger recombination and are masked by thermal effects. In this communication we extend the analysis of ref. 1 on thermally induced optical bistability at low power: we show, for the first time in HgCdTe, the appearance of clockwise hysteresis cycles in transmission as input power Pi is increased, due to nonlinear absorption. We can account for both absorptive and refractive nonlinear contributions by simultaneous monitoring of transmission and reflection. The Hg0.815Cd0.185Te plates (280 um in thickness, with doping pa =1*1016 cm-3, prepared and polished by Elettronica SpA) were placed without heatsinking in a thermally controlled environment. In Fig. 1 the transmitted (Pt) and reflected (Pr) power is shown as a function of Pi: the three data sets differ in cavity mistuning. The thermooptic effect was measured directly, by a close focus optical pyrometer, and indirectly by taking data at different thermal bath temperature T. The values of Pi at the hysteresis associated to a given cavity interference order (indicated with the symbols of Fig. 1c) drift with T (Fig. 2): the maximum induced temperature increase is inferred to be 30-35°C, with steps of 2.5-3.5°C at the switching points, and a value of dn/dT = -2.8*10-3 K-1 is deduced. Fig. 3 presents numerical results (to be compared with Fig. 1b) obtained parametrically solving the nonlinear Fabry Perot equations using the absorption measured after AR coating one sample face. This nonlinear absorption will be discussed in terms of a free carrier origin.

DOI
10.1364/obi.1988.the.7

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Many authors have experimentally examined the nonlinearities of HgCdTe at resonance with the CO2 laser wavelength [1]. At room temperature non1inearities of electronic origin, arising from band filling, are weak because of Auger recombination and are masked by thermal effects. In this communication we extend the analysis of ref. 1 on thermally induced optical bistability at low power: we show, for the first time in HgCdTe, the appearance of clockwise hysteresis cycles in transmission as input power Pi is increased, due to nonlinear absorption. We can account for both absorptive and refractive nonlinear contributions by simultaneous monitoring of transmission and reflection. The Hg0.815Cd0.185Te plates (280 um in thickness, with doping pa =11016 cm-3, prepared and polished by Elettronica SpA) were placed without heatsinking in a thermally controlled environment. In Fig. 1 the transmitted (Pt) and reflected (Pr) power is shown as a function of Pi: the three data sets differ in cavity mistuning. The thermooptic effect was measured directly, by a close focus optical pyrometer, and indirectly by taking data at different thermal bath temperature T. The values of Pi at the hysteresis associated to a given cavity interference order (indicated with the symbols of Fig. 1c) drift with T (Fig. 2): the maximum induced temperature increase is inferred to be 30-35°C, with steps of 2.5-3.5°C at the switching points, and a value of dn/dT = -2.810-3 K-1 is deduced. Fig. 3 presents numerical results (to be compared with Fig. 1b) obtained parametrically solving the nonlinear Fabry Perot equations using the absorption measured after AR coating one sample face. This nonlinear absorption will be discussed in terms of a free carrier origin.
Abstract We discuss the origin and characteristics of the very large intensity-dependent changes in the refractive index of the semiconductor cadmium mercury telluride at 10.6 m. With continuous wave (c.w.) radiation and sample temperatures of 77 K nonlinear Fabry-Perot effects can be observed at powers as low as 1 mW. The Auger dominated recombination process and the thermal contributions to the refractive index make observations of optical bistability difficult with c.w. radiation. However, the use of a pulsed CO2 laser and two-photon absorption of the radiation does lead to the observation of bistability at room temperature. We compare these results with the reported work on InSb.
Optical bistability in the presence of an optically induced absorption is observed when a thin 13-μm CdS sample is inserted between two mirrors of 90 % reflectivity, in our experiment, a modulated cw laser of ~15-mW peak power is tuned on each side of the free exciton resonance in CdS, and the transmission characteristics are studied. A theoretical calculation including both absorptive and dispersive effects is presented and good agreement is obtained. The absorption coefficient and the index of refraction of the material are connected by Kramers-Kronig relations. Propagation effects are taken into account. Sufficiently long pulses (40 ms) are considered to allow the thermally induced absorption to occur. For detunings above the free exciton resonance, we predict that counterclockwise hysteresis loops will first be observed as the intensity rises; for detunings below the free exciton resonance, only clockwise hysteresis loops are predicted. These predictions were experimentally verified. Power levels of the order of 5–10 mW were sufficient to observe bistability. Cavity effects were also observed.
A detailed study of bandgap resonant optical nonlinearities in n-type InAs and their use in an optical bistable device is presented. The results of measurements of both nonlinear absorption and nonlinear refraction taken with an HF laser show good agreement with a band-filling model in which the contribution from the light-hole band and the effects of large initial free carrier densities are included. Evidence of the saturation of the nonlinear refraction through the carrier-density-dependent recombination rate is presented, and it is shown that this effect together with diffraction effects accounts for the critical power for bistability observed in the reflected signal from an InAs etalon at 77 K.