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Applied Sciences

Recent Progress in On-Chip Erbium-Based Light Sources

Bo Wang, Peiqi Zhou, Xingjun Wang

Published Nov 18, 2022• 15 citations
Publisher

Abstract

In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challenges and development directions of the on-chip Er-based light sources are discussed.

DOI
10.3390/app122211712

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Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.

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In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challenges and development directions of the on-chip Er-based light sources are discussed.
Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.
Abstract Photonic quantum technology is essentially based on the exchange of individual photons as information carriers. Therefore, the development of practical single-photon sources that emit single photons on-demand is a crucial contribution to advance this emerging technology and to promote its first real-world applications. In the last two decades, a large number of quantum light sources based on solid-state emitters have been developed on a laboratory scale. Corresponding structures today have almost ideal optical and quantum-optical properties. For practical applications, however, one crucial factor is usually missing, namely direct on-chip fiber coupling, which is essential, for example, for the direct integration of such quantum devices into fiber-based quantum networks. In fact, the development of fiber-coupled quantum light sources is still in its infancy, with very promising advances having been made in recent years. Against this background, this review article presents the current status of the development of fiber-coupled quantum light sources based on solid-state quantum emitters and discusses challenges, technological solutions and future prospects. Among other things, the numerical optimization of the fiber coupling efficiency, coupling methods, and important realizations of such quantum devices are presented and compared. Overall, this article provides an important overview of the state-of-the-art and the performance parameters of fiber-coupled quantum light sources that have been achieved so far. It is aimed equally at experts in the scientific field and at students and newcomers who want to get an overview of the current developments.
The use of rare earth ions (REIs)—typically embedded as atomic defects in solids—has emerged as a promising strategy for practical quantum memories. In particular, the Er ion has garnered significant attention due to its telecom C-band optical transition, which makes it a suitable candidate for integration into existing optical fiber networks without the need for photon wavelength conversion. However, successful scalability of such a quantum memory platform would benefit greatly from employing a host material that is fully compatible with silicon and modern CMOS fabrication processes. In this study, we present the synthesis of Er-doped TiO2 thin films directly on standard silicon or silicon-on-insulator (SOI) substrates using atomic layer deposition (ALD). Our thin film exhibits favorable emitter properties at cryogenic temperatures (T = 3.5 K), including a narrow inhomogeneous linewidth and optical lifetime approaching that of bulk values. Additionally, the ALD process provides ample opportunities for device fabrication and integration with other components, further enhancing its potential for practical applications. Overall, our findings suggest that Er-doped TiO2 thin films synthesized via ALD represent a promising approach for developing practical quantum memories that can be seamlessly integrated with silicon photonics. This work lays a foundation for the development of quantum technologies with potential applications in communication, computing, and cryptography.
The capability of realizing quantum photonics implementations on-chip will have a strong impact on several aspects of quantum computation and information processing. The implementation of large scale integrated quantum photonic technologies requires on-chip reconfigurable waveguide circuits as well as single-photon sources and detectors. Many successes have been made in recent years to demonstrate complex quantum circuits in many material platforms. Among all these platforms, the Silicon-on-Insulator (SOI) platform is outstanding as it is well developed for classical applications and therefore deploys a high component density, mature fabrication techniques and compatibility with the telecom regime and the complementary metal-oxide-semiconductor (CMOS) technology. However, the lack of on-demand non-classical light sources, directly incorporated in silicon chips, forces the use of nonlinear processes to generate non-classical light states: the probabilistic nature of the emission process sets a limit in the maximally achievable experimental complexity. The use of on-demand sources will have a strong impact on the device’s scalability.
Rare-earth ion defects in solid-state hosts have emerged as a promising candidate for emissive quantum memories owing to their inherent spin–photon interface and long optical and spin coherence times. Erbium (Er3+) in particular has optical transitions in the C-band making it well suited to the use of existing telecom technology infrastructure. In this work, we present a platform to integrate rare-earth ions into standard silicon photonic circuits. Erbium is co-deposited in CMOS-compatible TiO2 host films onto SOI and patterned into high Purcell factor photonic crystal cavities. Purcell factors in excess of 500 are observed and transient spectral hole burning and photoluminescence excitation scans reveal homogeneous linewidths below 15 MHz. Additionally, we show that photonic wirebonding can provide a solution for low-loss and thermally stable fiber-to-chip coupling.
Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.