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Chinese Physics B

Nonlinear optical rectification of GaAs/Ga1–x Al x As quantum dots with Hulth-en plus Hellmann confining potential

Yiming Duan, Xuechao Li

Published May 18, 2022• 2 citations
Publisher

Abstract

We investigate the nonlinear optical rectification (NOR) of spherical quantum dots (QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by using the Nikiforov–Uvarov method. Expression for the NOR coefficient is derived by the density matrix theory. The results show that the applied external elements and internal parameters of this system have a strong influence on intraband nonlinear optical properties. It is hopeful that this tuning of the nonlinear optical properties of GaAs/Ga1–x Al x As QDs can make a greater contribution to preparation of new functional optical devices.

DOI
10.1088/1674-1056/ac70bf

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We investigate the nonlinear optical rectification (NOR) of spherical quantum dots (QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by using the Nikiforov–Uvarov method. Expression for the NOR coefficient is derived by the density matrix theory. The results show that the applied external elements and internal parameters of this system have a strong influence on intraband nonlinear optical properties. It is hopeful that this tuning of the nonlinear optical properties of GaAs/Ga1–x Al x As QDs can make a greater contribution to preparation of new functional optical devices.
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The study presents results of the linear and non-linear optical properties of GaAs quantum dots. The reported work aims to provide new results of the quantum dot optical properties confined in Hua plus modified Eckart (HPME) potential. To obtain analytical expressions for the energy eigenvalues and the wave functions, we solved the time-independent Schrödinger equation for the HPME potential by using the parametric Nikiforov-Uvarov (NU) method. Investigation of the linear, third-order nonlinear, and total absorption coefficients and refractive index changes was done with the help of the density matrix approach. The results showed that the energy decreases in a linear manner as the potential parameter, V0. Also, it is observed that as the barrier slope increases, the peaks of the linear, third-order linear, and total absorption coefficient tend to higher values of energy. Furthermore, as the barrier slope increases, the change in refractive indices increases, and their positions shift to higher energies. Additionally, an increase in the structure parameters and optical intensity greatly influences the absorption coefficients and the refractive index changes of the quantum dots.
Abstract This paper systematically explores the third-order nonlinear optical properties and modulation mechanisms of a spherical quantum dot system confined by a Mie-type potential. We analytically solve the Schrödinger equation with Nikiforov–Uvarov method based on effective mass approximation to obtain the eigenenergies and wave function of the system. Subsequently, key third-order nonlinear optical parameters, including the third-harmonic generation (THG) coefficient, total optical absorption coefficients, and refractive index changes, are derived via the density matrix formalism. The results indicate that the nonlinear optical responses strongly depend on the geometric dimensions and the microscopic confinement parameters. By adjusting these parameters, effective control over the THG coefficient can be achieved. Furthermore, this study reveals the significant modulation effects of environmental factors. The synergistic influence of quantum dot size, confinement potential, and environmental interactions is systematically analyzed, providing a theoretical basis for designing high-performance nonlinear optical devices based on quantum dots.
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Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.
In this paper, we have studied optical properties of spherical quantum dots by using Rosen-Morse potential. In this regard, we have first solved the Schrodinger equation and obtained energy levels and wave functions by applying Nikiforov-Uvarov (NU) method. Then, by using density matrix method, we have applied analytical expressions for the linear and third-order nonlinear absorption coefficient and refractive index changes. The results show that the total refractive index changes and the absorption coefficients increase and shift towards higher by enhancing height potential.