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Technical digest - International Electron Devices Meeting/Technical digest

Quantum Photonics with SnV Centers in Diamond

Shahriar Aghaeimeibodi, Jelena Vuckovic A

Published Dec 11, 2021• 2 citations
Publisher

Abstract

In this presentation, we will discuss our recent efforts on realizing a quantum photonic platform for diamond color centers. In particular, we demonstrate integration of tin-vacancy (SnV) spin qubits in diamond to optical waveguides, cavities, and nanopillars. We show that SnV centers created using our recent technique based on shallow ion implantation and overgrowth maintain their quality when placed in nanostructures.

DOI
10.1109/iedm19574.2021.9720697

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Bulletin of the American Physical Society•Mar 9, 2018•0 citations
In this presentation, we will discuss our recent efforts on realizing a quantum photonic platform for diamond color centers. In particular, we demonstrate integration of tin-vacancy (SnV) spin qubits in diamond to optical waveguides, cavities, and nanopillars. We show that SnV centers created using our recent technique based on shallow ion implantation and overgrowth maintain their quality when placed in nanostructures.
Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV -^{\,\textrm{-}}-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV -^{\,\textrm{-}}- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV -^{\,\textrm{-}}- centers in diamond. We integrate SnV -^{\,\textrm{-}}- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%90\%90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV -^{\,\textrm{-}}- centers in diamond.
Tin vacancy (SnV) centers in diamond are promising solid state qubits for integrated quantum photonics. Here, we fabricate and characterize a diamond on Al2O3 dual taper waveguide structure containing SnV centers, demonstrating optical coupling between the diamond nanobeam and the underlying Al2O3 waveguide. The devices are realized using a bilayer fabrication approach compatible with wafer scale lithography. Clear guided SnV- emission is observed in all optically active devices, indicating effective optical coupling in the integrated structure. These results demonstrate a scalable fabrication approach toward integrating diamond color centers with photonic waveguides.
Nanodiamonds containing single tin-vacancy (SnV) centers have the potential for integration into nanophotonic devices employed in quantum technologies such as quantum sensing, quantum information processing and quantum communication. The present study assessed single SnV centers in nanodiamonds less than 10 nm in size. Such centers were generated by implanting Sn ions into size-selected small nanodiamonds followed by high-temperature annealing. A sharp emission peak with a line width of 2.6 nm was observed at 618.7 nm, corresponding to the zero phonon line of SnV centers in bulk diamond. The Debye–Waller factor for this peak at room temperature was estimated to be 0.38 and so was slightly greater than the value for bulk diamond. A second-order correlation function yielded a g 2 (0) value of 0.04 ± 0.11, indicating single-photon emission. The successful creation of single SnV centers in nanodiamonds is a critical step toward integrating nanophotonic devices for photonic quantum technologies.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.