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arXiv:2606.18711

Integration of diamond nanobeams with SnVs on Al2O3 waveguides for scalable quantum photonic chip application

Yeting Yang, Ryota Kitagawa, Tetsuya Miyatake, Masaharu Hida, Naoki Fushimi, Koki Kaminaka, Takuto Yamaguchi, Toshiki Iwai, Itsuki Takagi, Hidetsugu Matsukiyo, Satomi Ishida, Satoshi Iwamoto, Manabu Ohtomo, Toshiyuki Miyazawa, Kenichi Kawaguchi, Ryoichi Ishihara, Shintaro Sato

physics.opticsquant-phSubmitted Jun 17, 2026• Announced Jun 18, 2026• 0 citations
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Abstract

Tin vacancy (SnV) centers in diamond are promising solid state qubits for integrated quantum photonics. Here, we fabricate and characterize a diamond on Al2O3 dual taper waveguide structure containing SnV centers, demonstrating optical coupling between the diamond nanobeam and the underlying Al2O3 waveguide. The devices are realized using a bilayer fabrication approach compatible with wafer scale lithography. Clear guided SnV- emission is observed in all optically active devices, indicating effective optical coupling in the integrated structure. These results demonstrate a scalable fabrication approach toward integrating diamond color centers with photonic waveguides.

Comments
12 pages, 3 figures, submissted to JJAP

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Tin vacancy (SnV) centers in diamond are promising solid state qubits for integrated quantum photonics. Here, we fabricate and characterize a diamond on Al2O3 dual taper waveguide structure containing SnV centers, demonstrating optical coupling between the diamond nanobeam and the underlying Al2O3 waveguide. The devices are realized using a bilayer fabrication approach compatible with wafer scale lithography. Clear guided SnV- emission is observed in all optically active devices, indicating effective optical coupling in the integrated structure. These results demonstrate a scalable fabrication approach toward integrating diamond color centers with photonic waveguides.
Tin-vacancy (SnV) centers in diamond are promising solid-state qubits for integrated quantum photonics. Here, we fabricate and characterize a diamond-on-Al 2 O 3 dual-taper waveguide structure containing SnV centers, demonstrating optical coupling between the diamond nanobeam and the underlying Al 2 O 3 waveguide. The devices are realized using a bilayer fabrication approach compatible with wafer-scale lithography. Clear guided SnV − emission is observed in all optically active devices, indicating effective optical coupling in the integrated structure. These results demonstrate a scalable fabrication approach toward integrating diamond color centers with photonic waveguides.
Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.
Building quantum networks requires efficient coupling of solid-state quantum emitters to photonic devices. Tinvacancy center (SnV) has attracted much interest for having long spin coherence times at temperatures above 1 K. Employing SnV as an optically addressable qubit requires integration with photonic structures to both route the emitted photons and enhance the light-matter interaction. We present incorporation of high-quality SnV centers with narrow linewidths in suspended diamond waveguides. Furthermore, we fabricate photonic crystal cavities in diamond with embedded SnV centers. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. Time-resolved photoluminescence measurements confirm that this effect is due to radiative Purcell enhancement of the spontaneous emission. Finally, we demonstrate Stark tuning of transition frequency of SnV centers, essential for multiemitter applications. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV -^{\,\textrm{-}}-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV -^{\,\textrm{-}}- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV -^{\,\textrm{-}}- centers in diamond. We integrate SnV -^{\,\textrm{-}}- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%90\%90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV -^{\,\textrm{-}}- centers in diamond.
We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ∼11 000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the β factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.