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arXiv:2005.10385 · ACS Photonics

Narrow-Linewidth Tin-Vacancy Centers in a Diamond Waveguide

Alison E. Rugar, Constantin Dory, Shahriar Aghaeimeibodi, Haiyu Lu, Shuo Sun, Sattwik Deb Mishra, Zhi‐Xun Shen, Nicholas A. Melosh, Jelena Vuckovic A

Published Aug 3, 2020• 67 citations
arXivHTMLPDF

Abstract

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.

DOI
10.1021/acsphotonics.0c00833

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Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.
Building quantum networks requires efficient coupling of solid-state quantum emitters to photonic devices. Tinvacancy center (SnV) has attracted much interest for having long spin coherence times at temperatures above 1 K. Employing SnV as an optically addressable qubit requires integration with photonic structures to both route the emitted photons and enhance the light-matter interaction. We present incorporation of high-quality SnV centers with narrow linewidths in suspended diamond waveguides. Furthermore, we fabricate photonic crystal cavities in diamond with embedded SnV centers. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. Time-resolved photoluminescence measurements confirm that this effect is due to radiative Purcell enhancement of the spontaneous emission. Finally, we demonstrate Stark tuning of transition frequency of SnV centers, essential for multiemitter applications. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV -^{\,\textrm{-}}-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV -^{\,\textrm{-}}- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV -^{\,\textrm{-}}- centers in diamond. We integrate SnV -^{\,\textrm{-}}- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%90\%90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV -^{\,\textrm{-}}- centers in diamond.
Quantum networks rely on the efficient coupling of coherent quantum memories to photonic links. Tin-vacancy centers (SnV) have emerged as promising candidates for the implementation of an optically interfaced quantum memory based on their long spin coherence times at temperatures above 1K. To enhance their interaction with photons SnV centers need to be integrated with high-quality photonic structures. In this work, we report the enhancement of coherent emission of SnV centers by coupling them to a nanophotonic waveguide resonator. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. We demonstrate strong enhancement of the radiative recombination rate of SnV centers resulting in their predominant emission via the coherent zero-phonon line and into the cavity mode. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV – ) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV – centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
Tin vacancy (SnV) centers in diamond are promising solid state qubits for integrated quantum photonics. Here, we fabricate and characterize a diamond on Al2O3 dual taper waveguide structure containing SnV centers, demonstrating optical coupling between the diamond nanobeam and the underlying Al2O3 waveguide. The devices are realized using a bilayer fabrication approach compatible with wafer scale lithography. Clear guided SnV- emission is observed in all optically active devices, indicating effective optical coupling in the integrated structure. These results demonstrate a scalable fabrication approach toward integrating diamond color centers with photonic waveguides.