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Applied Physics A

Simple fabrication of miniaturized glass cells for atomic vapor spectroscopy

Athanasios Laliotis, S. Villalba, H. Failache

Published Apr 24, 2022• 5 citations
Publisher
DOI
10.1007/s00339-022-05569-y

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The fabrication processes of chip-scale alkali atom vapor cells are designed, which include silicon micromachining, filling arrays of miniaturized cells with rubidium azide, hermetic packaging using anodic bonding technology, and photodecomposition of rubidium azide. The improved anodic bonding technology is demonstrated and used to improve the gastight bonding of alkali atom vapor cells to the glass/silicon/glass bonding structure. After the anodic bonding of the glass and silicon wafer is finished, an Al metal film with a certain thickness is sputtered at a certain angle at the back (i.e., the glass side) and side of the glass/silicon-bonded structure. Therefore, the electrical contact is led into the silicon wafer when a second anodic bonding is performed, and a high-quality glass/silicon/glass bonding structure is realized. Such anodic structures have great bond strength and gastight bonding of as low as 2.5×10-8Pa·m3·s-1. After gastight sealing, the cells are irradiated with ultraviolet, causing the azide to photodissociate into pure rubidium and nitrogen in situ. Rubidium optical absorption spectrum indicates that rubidium atoms are effectively sealed in the cells. It is confirmed that the process for the fabrication of the chip-scale alkali atom vapor cells is simple and feasible.

Scientia Sinica Informationis•May 1, 2015•1 citation
We report on the atomic spectroscopy and laser frequency stabilization using a new type of a miniaturized glass vapor cell with a scalable thickness varying from 500 nm up to 8 μm. The cell is fabricated by lithography and etching techniques in a Pyrex glass substrate, followed by anodic bonding. It is filled with rubidium vapor using a distillation procedure. This simple and cost-effective fabrication method provides an attractive and compact solution for atomic cells, with applications in quantum metrology, sensing, communication, and light-vapor manipulations at the subwavelength scale. Using the fabricated cell, we have performed fluorescence and transmission spectroscopy of the Rubidium D2 line and observed sub-Doppler broadened lines. As an example, for a potential application, we have used the fabricated cell to demonstrate the stabilization of a 780 nm diode laser to the level about 10−10 in fractional frequency.
In this letter, we present a novel microfabricated shaped rubidium vapor cell with 3 cm optical path length for miniaturized atomic magnetometers. The novel shaped rubidium vapor cells are manufactured by a wafer-level fabrication process, and the process consists of the following three steps sequentially: first, wet etching to form oblong shallow cavity arrays; second, anodic bonding, glass reflowing, and wet etching to obtain a glass wafer with shaped structures; third, anodic bonding and chemical reaction to obtain the wafer-level shaped rubidium vapor cells. A miniaturized atomic magnetometer using the novel shaped rubidium vapor cell is characterized in the geomagnetic environment. The performance of the novel shaped rubidium vapor cell is compared with the traditional microfabricated rubidium vapor cell of a “glass–silicon–glass” sandwich structure. Results show that the measured geomagnetic field is 47.85 μT. It is demonstrated that the dispersive signal's slope of the novel shaped rubidium vapor cell is 15 times larger than that of the traditional one. Results also indicate that the miniaturized atomic magnetometer working in the geomagnetic environment has a magnetic noise spectral density of 3.5 pT/Hz1/2from 1 to 2 Hz.
The fabrication processes of chip-scale alkali atom vapor cells are designed, which include silicon micromachining, filling arrays of miniaturized cells with rubidium azide, hermetic packaging using anodic bonding technology, and photodecomposition of rubidium azide. The improved anodic bonding technology is demonstrated and used to improve the gastight bonding of alkali atom vapor cells to the glass/silicon/glass bonding structure. After the anodic bonding of the glass and silicon wafer is finished, an Al metal film with a certain thickness is sputtered at a certain angle at the back (i.e., the glass side) and side of the glass/silicon-bonded structure. Therefore, the electrical contact is led into the silicon wafer when a second anodic bonding is performed, and a high-quality glass/silicon/glass bonding structure is realized. Such anodic structures have great bond strength and gastight bonding of as low as 2.5×10-8Pa·m3·s-1. After gastight sealing, the cells are irradiated with ultraviolet, causing the azide to photodissociate into pure rubidium and nitrogen in situ. Rubidium optical absorption spectrum indicates that rubidium atoms are effectively sealed in the cells. It is confirmed that the process for the fabrication of the chip-scale alkali atom vapor cells is simple and feasible.