Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Physics Conference Series

Investigation of the parameters of a single photon detector for quantum communication

Kristina I. Khomyakova, Andrey P. Kokhanenko, Anton Losev

Published Dec 1, 2021• 6 citations
Publisher

Abstract

Abstract Nowadays the best single photon detectors from a practical view are those based on InGaAs/InP avalanche photodiodes, operating at a wavelength of 1.55 μm. The dependence of quantum efficiency and noise levels on the temperature and bias voltage of avalanche photodiodes were carried out.
DOI
10.1088/1742-6596/2140/1/012030

Related papers

Using InP/InGaAs avalanche photodiodes for 1.3 um photon detection

A. A. Anisimov, Andrei V. Medvedev, Sergey I. Markov

InGaAs/InP avalanche photodiode in photon detection mode was researched. The automatic experimental setup was developed. The parameters of single photon detector were optimized for quantum cryptography application in temperature range -38...-57C for 1.3 μm wavelength. Quantum efficiency 16% at quantum bit error rate 10% and dark count probability 7 10-5 at -38C was achieved.

Lasers for Measurements and Information Transfer•Feb 16, 2005•0 citations

Single photon detection used in quantum communication

Haiqiang Ma

In order to improve the sensitivity of single-photon detection systems,InGaAs/InP avalanche photodiode(InGaAs/InP APD) is used in the design of single photon detector of quantum communication.Single photon detector bias generation circuit in gate pulse mode,single-photon signal amplification circuit,single photon signal detection circuit and temperature control module were realized.By selecting high-precision OP37 preamplifier and precision comparator AD8561,quantum efficiency was increased to 18.3%,dark count was controlled within 4.1 × 10-6/ns.

Journal of Applied Optics•Jan 1, 2010•0 citations

Advances in InGaAs/InP single-photon detector systems for quantum communication

Jun Zhang, Mark A Itzler, Hugo Zbinden +1 more

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized. Recent progress in single-photon detectors for quantum communication based on III–V compound semiconductor avalanche photodiodes is reviewed. Specifically, Jun Zhang and Jian-Wei Pan at the University of Science and Technology of China and their colleagues in the USA and Switzerland introduce technological advances for InGaAs/InP single-photon detector systems in the telecommunication band along with their associated applications in quantum communication. III–V single-photon avalanche diodes are the most practical tools available for detecting ultraweak near-infrared light. The scientists overview important parameters for evaluating the performance of detector systems based on single-photon avalanche diodes and describe the experimental characterization of these parameters. They also consider emerging techniques, including high-frequency gating at gigahertz rates and free-running operation using negative-feedback avalanche diodes. Finally, the future prospects of these devices are considered.

arXiv:1501.06261•Light Science & Applications•May 8, 2015•441 citations

Advances in InGaAs/InP single-photon detector systems for quantum communication

Jun Zhang, Mark A. Itzler, Hugo Zbinden +1 more

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.

•Jan 1, 2015•349 citations

Single-photon avalanche diode detectors for quantum key distribution

Gerald S. Buller, Ryan E. Warburton, Saverio Pellegrini +5 more

The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.

IET Optoelectronics•Dec 10, 2007•14 citations

Assembly and characterization of single-photon detectors for quantum networks

Enric Solé Aznar

The use of quantum technologies has risen drastically in the last decades, offering an enhancement in terms of the technological capabilities available nowadays. Found in this field of research, quantum communications based on the transmission of single photons offer new approaches to redefine the use of protocols and devices for specialised applications. As a final result, this leads to the accomplishment of long-range quantum networks with terrestrial and satellite-based communications set to establish a new scale of Telecommunication applications. Within these kinds of applications, this project focuses on the assembly of a single-photon detector using a photodiode of type Single-Photon Avalanche Diode (SPAD), essential device to define the level of performance of any quantum communication system. To carry this out, the system is assembled around its centre piece, an Excelitas APD operated in Geiger mode above its breakdown voltage. The electronic circuit that drives the photodiode is characterised to work with its adjusted bias voltage, its dedicated temperature management system and its active quenching circuit to detect pulses with certainty and precision. The final version of the project is adjusted to work in the 1300nm and 1500nm operating wavelengths as the photodiode used is formed by an InGaAs/InP semiconductor structure. Working on top of the original circuit provided initially, the experimental measurements obtained in the course of the project prove that the design modifications implemented have improved the functioning of the whole system. The main achievements accomplished encompass the generation of pulses for photon detection at 20kHz, the reduction of electromagnetic interferences by a factor 40, the enhancement of the manipulated signals in the circuit by a factor of tens, and the correct management of the SPAD temperature to maintain a fixed value of dark counts for a long time.

•Jul 1, 2026•0 citations
In order to improve the sensitivity of single-photon detection systems,InGaAs/InP avalanche photodiode(InGaAs/InP APD) is used in the design of single photon detector of quantum communication.Single photon detector bias generation circuit in gate pulse mode,single-photon signal amplification circuit,single photon signal detection circuit and temperature control module were realized.By selecting high-precision OP37 preamplifier and precision comparator AD8561,quantum efficiency was increased to 18.3%,dark count was controlled within 4.1 × 10-6/ns.
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized. Recent progress in single-photon detectors for quantum communication based on III–V compound semiconductor avalanche photodiodes is reviewed. Specifically, Jun Zhang and Jian-Wei Pan at the University of Science and Technology of China and their colleagues in the USA and Switzerland introduce technological advances for InGaAs/InP single-photon detector systems in the telecommunication band along with their associated applications in quantum communication. III–V single-photon avalanche diodes are the most practical tools available for detecting ultraweak near-infrared light. The scientists overview important parameters for evaluating the performance of detector systems based on single-photon avalanche diodes and describe the experimental characterization of these parameters. They also consider emerging techniques, including high-frequency gating at gigahertz rates and free-running operation using negative-feedback avalanche diodes. Finally, the future prospects of these devices are considered.
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
The use of quantum technologies has risen drastically in the last decades, offering an enhancement in terms of the technological capabilities available nowadays. Found in this field of research, quantum communications based on the transmission of single photons offer new approaches to redefine the use of protocols and devices for specialised applications. As a final result, this leads to the accomplishment of long-range quantum networks with terrestrial and satellite-based communications set to establish a new scale of Telecommunication applications. Within these kinds of applications, this project focuses on the assembly of a single-photon detector using a photodiode of type Single-Photon Avalanche Diode (SPAD), essential device to define the level of performance of any quantum communication system. To carry this out, the system is assembled around its centre piece, an Excelitas APD operated in Geiger mode above its breakdown voltage. The electronic circuit that drives the photodiode is characterised to work with its adjusted bias voltage, its dedicated temperature management system and its active quenching circuit to detect pulses with certainty and precision. The final version of the project is adjusted to work in the 1300nm and 1500nm operating wavelengths as the photodiode used is formed by an InGaAs/InP semiconductor structure. Working on top of the original circuit provided initially, the experimental measurements obtained in the course of the project prove that the design modifications implemented have improved the functioning of the whole system. The main achievements accomplished encompass the generation of pulses for photon detection at 20kHz, the reduction of electromagnetic interferences by a factor 40, the enhancement of the manipulated signals in the circuit by a factor of tens, and the correct management of the SPAD temperature to maintain a fixed value of dark counts for a long time.