Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized. Recent progress in single-photon detectors for quantum communication based on III–V compound semiconductor avalanche photodiodes is reviewed. Specifically, Jun Zhang and Jian-Wei Pan at the University of Science and Technology of China and their colleagues in the USA and Switzerland introduce technological advances for InGaAs/InP single-photon detector systems in the telecommunication band along with their associated applications in quantum communication. III–V single-photon avalanche diodes are the most practical tools available for detecting ultraweak near-infrared light. The scientists overview important parameters for evaluating the performance of detector systems based on single-photon avalanche diodes and describe the experimental characterization of these parameters. They also consider emerging techniques, including high-frequency gating at gigahertz rates and free-running operation using negative-feedback avalanche diodes. Finally, the future prospects of these devices are considered.
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized. Recent progress in single-photon detectors for quantum communication based on III–V compound semiconductor avalanche photodiodes is reviewed. Specifically, Jun Zhang and Jian-Wei Pan at the University of Science and Technology of China and their colleagues in the USA and Switzerland introduce technological advances for InGaAs/InP single-photon detector systems in the telecommunication band along with their associated applications in quantum communication. III–V single-photon avalanche diodes are the most practical tools available for detecting ultraweak near-infrared light. The scientists overview important parameters for evaluating the performance of detector systems based on single-photon avalanche diodes and describe the experimental characterization of these parameters. They also consider emerging techniques, including high-frequency gating at gigahertz rates and free-running operation using negative-feedback avalanche diodes. Finally, the future prospects of these devices are considered.
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.
Two approaches to single-photon detection at telecom wavelengths have been investigated, using semiconductor and superconductor technologies. The low temperature operation of free-running InGaAs/InP negative feedback avalanche diodes (NFADs) was studied, demonstrating that they can operate with an extremely low dark count rate, which opens up a host of new applications. Secondly, superconducting nanowire single-photon detectors (SNSPDs) based on amorphous materials were developed, fabricated and characterized. These detectors are highly attractive because they can achieve excellent attributes simultaneously, such as high efficiency, low noise, good temporal resolution, no afterpulsing and high count rates. Finally, it was demonstrated that the use of NFADs can enable record distance quantum key distribution (QKD) over 307 km of optical fiber. A next generation QKD system has been proposed and numerically analyzed, aiming at extending the record distance by an additional 100 km and increasing the state-of-the-art secret key rate by over an order of magnitude.
Free-running single photon detectors at telecom wavelengths are attractive for many tasks in quantum optics. However, until recently, the convenient and compact InGaAs/InP avalanche photodiodes did not operate with satisfactory performance in this regime due to high dark count rates and afterpulsing effects. Recent development of negative feedback avalanche diodes (NFADs) enabled very fast passive quenching of the avalanche current, effectively reducing the afterpulse probability and subsequently allowing free-running operation. Here, we present analysis of NFAD operation at low temperatures, down to 163 K, which reveals a significant reduction of the dark count rate. We succeeded in developing a compact single photon detection system with a dark count rate of ~1 cps at 10% detection efficiency. To ensure that the NFAD is in a well-defined initial condition during the characterization of the detection efficiency and afterpulsing, we use a recently developed FPGA based test procedure suitable for free-running detectors. To demonstrate the performance of the detector in a real-world application we integrate it into a 1.25 GHz clocked quantum key distribution system. An optimization of the detector temperature allowed secret key distribution in the presence of more than 30 dB of loss in the quantum channel.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
In any quantum communication system, such as a quantum key distribution (QKD) system, data rates are mainly limited by the system clock rate and the various link losses. While the transmission clock rate is limited by the temporal resolution of the single-photon detectors, losses in a fiber-based quantum communication system can be minimized by operating in the near infrared range (NIR), at 1310 nm or 1550 nm. Commercially available InGaAs-based avalanche photo-diodes (APDs) can be operated as single-photon detectors in this wavelength range [Hadfield, 2009]. Due to the severe after-pulsing, InGaAs APDs are typically used in a gated mode and this can limit their application in high-speed quantum communications systems. Superconducting single-photon detectors (SSPDs) can work in the NIR wavelength range with good performance [Gol’tsman et al. 2001; Hadfield, 2009]. However, SSPDs require cryogenic temperatures, and are not widely available on the commercial market at present. In addition, InGaAs/InP based photomultiplier tubes (PMT) can operate in the NIR range, but its performance is limited by very low detection efficiency (1 % at 1600 nm) and large timing jitter (1.5 ns) [Hamamatsu, 2005]. Microchannel plates (MCP) are micro-capillary electron multipliers coated with an electron-emissive material and multiply photon-excited electrons from a photon cathode [Wiza, 1979]. MCPs usually have faster rise times and lower timing jitter than is achievable with PMTs. InGaAs MCPs can work in the NIR range. These MCPs, but are limited by low detection efficiency (~1 %) [Martin, J. & Hink P. 2003]. On the other hand, silicon based avalanche photo-diodes (Si APDs) are compact, relatively inexpensive, and can be operated at ambient temperatures with high detection efficiency and low noise in the visible or near-visible range. Unfortunately they do not work at wavelengths longer than 1000 nm. For those wavelengths, an up-conversion technique has been developed that uses sum-frequency generation (SFG) in a non-linear optical medium to convert the signal photons to a higher frequency (shorter wavelength) in the visible or near visible range. The up-converted photons can then be detected by a Si APD. Up-conversion detectors use commercially available components and devices, and are a practical solution for many applications in quantum communications. To date, several groups have successfully developed highly efficient up-conversion single-photon detectors in the nearinfrared range using periodically poled lithium niobate (PPLN) waveguides [Diamanti et al., 2005; Langrock et al., 2005; Thew et al., 2006; Tanzilli et al., 2005; Xu et al., 2007;] and bulk crystals [Vandevender & Kwiat, 2004].