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International Journal of Modern Physics B

Quantum interference of spontaneous-emission channels near the surface of Bi2Se3

Dimitrios E. Karaoulanis, Vassilios Yannopapas

Published Apr 30, 2021• 4 citations
Publisher

Abstract

We show that the quantum interference between two spontaneous emission channels can be significantly enhanced when a three-level V-type atom is placed near the surface of the topological insulator [Formula: see text]. The enhancement of quantum interference is a result of the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to surface of the [Formula: see text] at the frequencies of polaritonic-type excitations.

DOI
10.1142/s021797922150154x

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We show that the quantum interference between two spontaneous emission channels can be significantly enhanced when a three-level V-type atom is placed near the surface of the topological insulator [Formula: see text]. The enhancement of quantum interference is a result of the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to surface of the [Formula: see text] at the frequencies of polaritonic-type excitations.
In this work, we show that the quantum interference between two spontaneous emission channels can be greatly enhanced when a three-level V-type quantum emitter is placed near the bismuth chalcogenide ( B i 2 T e 3 ). Namely, we calculated the degree of quantum interference for quantum emitters placed in the vicinity of a planar surface of a B i 2 T e 3 slab, as well as near a B i 2 T e 3 microsphere. We found, in particular, that the degree of quantum interference assumes very high values, for both geometries, which is a result of the strong dependence of the spontaneous emission rate on the orientation of a quantum-emitter dipole relative to the B i 2 T e 3 surface, at the frequencies of polaritonic-type excitations. These particular high values of quantum interference can trigger a variety of phenomena associated with quantum interference of spontaneous-emission channels, such as lasing without inversion, coherent populations trapping, transparency, nonlinearities, and so forth.
We show that the quantum interference between two spontaneous emission channels can be greatly enhanced when a three-level V-type atom is placed near plasmonic nanostructures such as metallic slabs, nanospheres, or periodic arrays of metal-coated spheres. The spontaneous emission rate is calculated by a rigorous first-principles electromagnetic Green's tensor technique. The enhancement of quantum interference is attributed to the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to the surface of the nanostructure at the excitation frequencies of surface plasmons.
We investigate the phenomenon of quantum interference in spontaneous emission for a three-level V-type quantum emitter placed between two bismuth-chalcogenide (Bi2Te3, Bi2Se3) microspheres. In particular, we find that the degree of quantum interference can become as high as 0.994, a value which is attributed to the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to the surfaces of the microspheres, at the excitation frequencies of phonon-polariton states of the bismuth-chalcogenide microspheres (anisotropic Purcell effect). As a consequence of the high degree of quantum interference, we observe the occurrence of strong population trapping in the quantum emitter. To the best of our knowledge, the reported values of the degree of quantum interference are record values and are obtained for a relatively simple geometrical setup such as that of a microparticle dimer.
The spontaneous emission interference of a V-type three-level atom located in a topological insulator (TI) multilayer structure is investigated. Based on the reflection coefficients of the TI multilayer derived by the transfer matrix method, the atomic spontaneous emission rate is expressed in terms of the dyadic Green’s function. Due to the accumulation of polarization conversion at each interface in the multilayer structure, the anisotropy of the electromagnetic environment around the atom can be improved and thereby the spontaneous emission is effectively suppressed and quantum interference enhanced. The quantum interference enhancement effect tends to a saturation value with the increasing layer number. The quantum interference of the atom inside the TI multilayer cavity can be stronger than that in front of a TI multilayer within a large range of cavity length for the case of parallel magnetization on TI surfaces.
The spontaneous emission of a V-type three-level quantum emitter near graphene layers is investigated. With appropriate doping densities, graphene layers support transverse electric- (TE-) polarized surface plasmons. This kind of plasmon can enhance the decay rates of dipoles parallel to the layers, and subsequently, strong quantum interference presents between the two orthogonal transition dipoles of the emitter. As a result, the emission field polarization and the spectrum can be radically changed. This can be evidence of the TE-polarized surface plasmons in the graphene layers.
The spontaneous decay and quantum interference of a V\mathsf{V}V-type Zeeman atom placed near a $\ensuremath{\mu}$-negative metamaterial (MNG) slab are investigated. Based on the fact that MNG slab supports only TE-polarized surface-plasmon polariton (SPP) modes, the decay rate of the dipole component parallel to the interface would be much larger than that normal to the interface, because one can couple while another decouple to TE modes. Consequently, high-level anisotropic environment is created and the two dipoles can interfere with each other strongly by sharing such SPP modes even if they are orthogonal. In our work, we analyze the influence of the parameters of the MNG slab as well as the atomic location on the interference intensity in detail. In addition, the dissipation of the slab is considered, and the quantum interference is still excellent even with large absorption.