NASA STI/Recon Technical Report N

Reading and writing of photochemical holes using GaAlAs diode lasers

Peter Pokrowsky, W. E. Moerner, F. Chu, Gary C. Bjorklund

Published Feb 1, 1983• 0 citations

Abstract

A current-tuned GaAlAs-diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833-nm zero-phonon line of the R′ color center in LiF. Applications for reading and writing data into frequency-domain optical memories based on photochemical hole burning are discussed.

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