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Conference on Lasers and Electro-Optics

Reading and writing of information in a frequency domain optical memory using GaAlAs diode lasers

Peter Pokrowsky, Frank Ghu, Gary C. Bjorklund

Published Jan 1, 1983• 0 citations
Publisher

Abstract

Recently there has been considerable interest in frequency domain optical memories based on the cryogenic phenomenon of photochemical hole burning.1 This phenomenon occurs whenever persistent photochemical changes can be induced by exposure to narrowband optical radiation tuned to a frequency within the inhomogeneously broadened zero phonon line of a photoactive material contained In a host. The narrowband radiation selectively excites that fraction of molecules whose homogeneous linewidth overlaps the excitation frequency. The ensuing photochemical reaction results in a persistent narrow dip or hole in the line shape. Since typical ratios of inhomogeneous- to-homogeneous widths are of the order of 103, 103 resolvable holes can be burned into the inhomogeneous line at each spatial location in the sample. Thus the storage density in such a frequency domain optical memory might ultimately be 103 higher than in a conventional optical memory.

DOI
10.1364/cleo.1983.tum46

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Recently there has been considerable interest in frequency domain optical memories based on the cryogenic phenomenon of photochemical hole burning.1 This phenomenon occurs whenever persistent photochemical changes can be induced by exposure to narrowband optical radiation tuned to a frequency within the inhomogeneously broadened zero phonon line of a photoactive material contained In a host. The narrowband radiation selectively excites that fraction of molecules whose homogeneous linewidth overlaps the excitation frequency. The ensuing photochemical reaction results in a persistent narrow dip or hole in the line shape. Since typical ratios of inhomogeneous- to-homogeneous widths are of the order of 103, 103 resolvable holes can be burned into the inhomogeneous line at each spatial location in the sample. Thus the storage density in such a frequency domain optical memory might ultimately be 103 higher than in a conventional optical memory.
Many investigations have been done on the field of frequency domain optical memories based on photochemical hole burning (PHB). This effect offers an extra dimension for the organization of an optical memory. At cryogenic temperatures several solid state materials such as aggregate color centers in alkali halide crystals exhibit inhomogeneously broadened absorption lines. In such an absorption line permanent narrow holes can be burnt by photochemical processes induced by exposure to intense laser radiation with a wavelength within the inhomogeneously broadened line.
One very exciting application of laser spectroscopy would be to use the high-resolution capabilities of today’s lasers and the phenomenon of persistent spectral hole-burning to form a frequency domain optical storage system.1 In such a system, bits of information would be stored by locally modifying (in the frequency domain) the shape of an inhomogeneously broadened absorption line of an absorber in a solid at low temperatures. Because typical homogeneous widths are 1000X (or more) narrower than typical inhomogeneous widths, as many as 1000 bits could be written in one diffraction-limited 1-μm spot In a sample, yielding the impressive storage density of 1011 bits/cm2.