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Optical Data Storage

Reading and Writing of Photochemical Holes Using GaAIAs Diode Lasers

Peter Pokrowsky, W. E. Moerner, F. Chu, Gary C. Bjorklund

Published Jan 1, 1983• 0 citations
Publisher

Abstract

Many investigations have been done on the field of frequency domain optical memories based on photochemical hole burning (PHB). This effect offers an extra dimension for the organization of an optical memory. At cryogenic temperatures several solid state materials such as aggregate color centers in alkali halide crystals exhibit inhomogeneously broadened absorption lines. In such an absorption line permanent narrow holes can be burnt by photochemical processes induced by exposure to intense laser radiation with a wavelength within the inhomogeneously broadened line.

DOI
10.1364/ods.1983.wa7

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An Engineering Study of Optical Memories Based on Photochemical Hole Burning.

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Contents: Introduction; Research Accomplished -- Detection of Photochemical Holes Using FM Spectroscopy, PHB in Aggregate Color Centers Contained in Alkali Halide Hosts, PHB Memory Systems Configurations, Survey of PHB Recording Materials, Tunable GaAlAs Laser Sources, Reading and Writing of Photochemical Holes using GaAlAs Diode lasers; Publications; Technical Reports; Conference Presentations; Personnel.

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Conference on Lasers and Electro-Optics•Jan 1, 1985•0 citations
Many investigations have been done on the field of frequency domain optical memories based on photochemical hole burning (PHB). This effect offers an extra dimension for the organization of an optical memory. At cryogenic temperatures several solid state materials such as aggregate color centers in alkali halide crystals exhibit inhomogeneously broadened absorption lines. In such an absorption line permanent narrow holes can be burnt by photochemical processes induced by exposure to intense laser radiation with a wavelength within the inhomogeneously broadened line.
Recently there has been considerable interest in frequency domain optical memories based on the cryogenic phenomenon of photochemical hole burning.1 This phenomenon occurs whenever persistent photochemical changes can be induced by exposure to narrowband optical radiation tuned to a frequency within the inhomogeneously broadened zero phonon line of a photoactive material contained In a host. The narrowband radiation selectively excites that fraction of molecules whose homogeneous linewidth overlaps the excitation frequency. The ensuing photochemical reaction results in a persistent narrow dip or hole in the line shape. Since typical ratios of inhomogeneous- to-homogeneous widths are of the order of 103, 103 resolvable holes can be burned into the inhomogeneous line at each spatial location in the sample. Thus the storage density in such a frequency domain optical memory might ultimately be 103 higher than in a conventional optical memory.
Persistent spectral hole-burning (PHB, also called photochemical hole-burning) permits use of the optical frequency for encoding digital information through the presence and absence of spectral holes that are burned in inhomogeneously broadened absorption lines at low (liquid helium) temperatures. The optical frequency or wavelength at which a given hole is burned acts as an additional dimension for data storage, hence this optical recording scheme has been called Frequency Domain Optical Storage (FDOS). The combination of spectral and spatial data-recording can make storage densities in excess of 1010 bits/cm2 possible; furthermore, since rotation of the recording medium is not necessary, shorter random access times will result. The future success of the FDOS concept will rely on progress in several technological and engineering areas as well as on advances in several critical materials areas1.
Persistent spectral hole-burning (PHB) has been proposed as the essential element of a frequency domain optical storage system1 in which the frequency at which a hole is burned in an inhomogeneously broadened absorption line at low temperatures serves as an additional dimension for the storage of digital information. Essentially all of the mechanisms studied until recently have been single-photon mechanisms, i.e., the photoionduced change leading to hole-burning (writing) for a given center occurs with a certain fixed probability after the absorption of one photon. Such linear, monophotonic processes suffer from the drawback that the act of detecting holes (reading) can also produce changes in the absorption line. Recent modeling studies of the generalized single-photon process2 have shown that thousands to tens of thousands of reads can be obtained from single-photon mechanisms only when the material possesses high quantum efficiency and low absorption cross section. These restrictive requirements do not apply for photon-gated hole-burning mechanisms, i.e., those mechanisms for which hole-burning occurs only in the presence of an additional “gating” light source, because for these mechanisms, reading is performed in the absence of the gating light and is therefore nondestructive.