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An Engineering Study of Optical Memories Based on Photochemical Hole Burning.

Gary C. Bjorklund

Published Mar 22, 1983• 0 citations
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Abstract

Contents: Introduction; Research Accomplished -- Detection of Photochemical Holes Using FM Spectroscopy, PHB in Aggregate Color Centers Contained in Alkali Halide Hosts, PHB Memory Systems Configurations, Survey of PHB Recording Materials, Tunable GaAlAs Laser Sources, Reading and Writing of Photochemical Holes using GaAlAs Diode lasers; Publications; Technical Reports; Conference Presentations; Personnel.

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Journal of the Ceramic Society of Japan•Jan 1, 1991•6 citations
Contents: Introduction; Research Accomplished -- Detection of Photochemical Holes Using FM Spectroscopy, PHB in Aggregate Color Centers Contained in Alkali Halide Hosts, PHB Memory Systems Configurations, Survey of PHB Recording Materials, Tunable GaAlAs Laser Sources, Reading and Writing of Photochemical Holes using GaAlAs Diode lasers; Publications; Technical Reports; Conference Presentations; Personnel.
Many investigations have been done on the field of frequency domain optical memories based on photochemical hole burning (PHB). This effect offers an extra dimension for the organization of an optical memory. At cryogenic temperatures several solid state materials such as aggregate color centers in alkali halide crystals exhibit inhomogeneously broadened absorption lines. In such an absorption line permanent narrow holes can be burnt by photochemical processes induced by exposure to intense laser radiation with a wavelength within the inhomogeneously broadened line.
Recently there has been considerable interest in frequency domain optical memories based on the cryogenic phenomenon of photochemical hole burning.1 This phenomenon occurs whenever persistent photochemical changes can be induced by exposure to narrowband optical radiation tuned to a frequency within the inhomogeneously broadened zero phonon line of a photoactive material contained In a host. The narrowband radiation selectively excites that fraction of molecules whose homogeneous linewidth overlaps the excitation frequency. The ensuing photochemical reaction results in a persistent narrow dip or hole in the line shape. Since typical ratios of inhomogeneous- to-homogeneous widths are of the order of 103, 103 resolvable holes can be burned into the inhomogeneous line at each spatial location in the sample. Thus the storage density in such a frequency domain optical memory might ultimately be 103 higher than in a conventional optical memory.
For the last few years, there has been considerable research activity at the IBM San Jose Research Laboratory devoted to frequency domain optical memories based upon photochemical hole burning (PHB). The PHB phenomenon allows optical frequency to be utilized as an additional dimension for the organization of optical memories1 and offers the potential of achieving a 103 gain in achievable storage density over conventional optical memories and a factor of 3 × 104 gain over inductive magnetic recording.
Photochemical hole burning (PHB) is a topic of attracting increasing interest from spectroscopic viewpoints as well as from the practical prospects for ultra-high-density frequency-domain optical storage. Recent advances in PHB study are reviewed mainly focusing on the effects of chemical structure of guest ions and molecules as well as host matrices on the efficiency of hole formation and its temperature dependence, low energy excitation modes and Debye-Waller factors in amorphous matrices, and the mechanism of photon-gated PHB.