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Superconductor Science and Technology

Design and implementation of bit-parallel RSFQ shift register memories

Wanning Xu, Liliang Ying, Qian Lin, Jie Ren, Zhen Wang

Published Jun 4, 2021• 11 citations
Publisher

Abstract

Abstract In this paper, a shift register (SR) memory based on rapid single flux quantum (RSFQ) logic for bit-parallel access is proposed. The memory cell changes from a row in the memory array to a column to increase the bit of data accessed per one clock cycle. The design of the 8 bit × 2 bit (8 × 2) memory is introduced. The memory consists of four parts: a SR memory array, an input buffer, an output buffer, and a controller, in which the controller is used to produce a control signal at a certain clock cycle specified by the address data. We have obtained the low speed test of the 8 × 2 memory fabricated by 6 kA cm −2 Nb process (SIMIT-Nb03), all bit-parallel access operations (write, read, clear and write, and read again) have been verified. We also simulated the 8 × 8 memory with data width expansion and obtained the maximum operating frequency of 34 GHz after the place and route with the SIMIT-Nb03 cell library. Based on the hierarchical storage, we have used the 8 × 8 memory as a basic block to construct large size of memory system, the access time and bandwidth have been evaluated. The bit-parallel memory shows higher bandwidth than bit-serial memory with the same capacity, especially for large capacity memory.

DOI
10.1088/1361-6668/ac086e

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IEEE Transactions on Applied Superconductivity•Jan 1, 1993•73 citations
Abstract In this paper, a shift register (SR) memory based on rapid single flux quantum (RSFQ) logic for bit-parallel access is proposed. The memory cell changes from a row in the memory array to a column to increase the bit of data accessed per one clock cycle. The design of the 8 bit × 2 bit (8 × 2) memory is introduced. The memory consists of four parts: a SR memory array, an input buffer, an output buffer, and a controller, in which the controller is used to produce a control signal at a certain clock cycle specified by the address data. We have obtained the low speed test of the 8 × 2 memory fabricated by 6 kA cm −2 Nb process (SIMIT-Nb03), all bit-parallel access operations (write, read, clear and write, and read again) have been verified. We also simulated the 8 × 8 memory with data width expansion and obtained the maximum operating frequency of 34 GHz after the place and route with the SIMIT-Nb03 cell library. Based on the hierarchical storage, we have used the 8 × 8 memory as a basic block to construct large size of memory system, the access time and bandwidth have been evaluated. The bit-parallel memory shows higher bandwidth than bit-serial memory with the same capacity, especially for large capacity memory.
The lack of a high-density and high-speed memory is a serious impediment for realization of large-scale RSFQ digital systems. A shift resister memory, which has high throughput and simple circuit structure, is one candidate to overcome this drawback. We show a design framework of the shift register memory, which is usable for the high-speed register files and the main memories of the RSFQ microprocessor. The proposed system consists of an array of shift registers and a packet decoder that switches a high-speed serial data stream into the specified shift register. The target clock frequency is 16 GHz assuming 2.5 kA/cm/sup 2/ Nb standard process. We have estimated the propagation delay and the circuit area of the data-driven self-timed (DDST) packet decoder. Based on this estimation, we have also evaluated the access time and the area of the memory system. Several key components, including the one-to-two packet switch and the one-to-four DDST packet decoder, were implemented and their correct operations were confirmed.
In the realization of large-scale single-flux-quantum (SFQ) digital systems, one of the most serious problems is the lack of high-density and high-speed memories. We have been developing random access memories using SFQ shift registers, which are one candidate to solve the memory problem in the SFQ digital system because of their high throughput and short access time. In this paper we have designed and tested a (4 × 8)-bit SFQ shift register file as a demonstration of the SFQ shift register memory system. Its target clock frequency is 20 GHz assuming an NEC 2.5 kA cm −2 Nb standard process. In the test, we have confirmed that 8-bit dual-rail data can be loaded to appropriate shift registers specified by 2-bit address data. We have also verified that the loaded data are read out and written back to the same shift register at high speed. A tested dc bias margin at 20 GHz is ±5%.
We demonstrated a high-density shift-register-based random access memory system based on rapid single-flux-quantum (RSFQ) logic. This memory system was developed to be integrated with bit-serial RSFQ microprocessors, which are called the CORE e series. It is composed of a shift-register array to store data, a decoder to select the shift register pointed to by a given address, and mergers to output data. To achieve high density, we introduced a new memory system structure and designed compact storage elements and other peripheral components. We integrated two 256-bit memory systems (32 entries for 8-bit data and instructions each) with a CORE e microprocessor and fabricated it using the National Institute of Advanced Industrial Science and Technology 10-kA/cm2Advanced Process. The area occupied by each memory system is 2.69 mm2. We obtained correct operations for all of the addresses in low-frequency tests. The typical measured bias margin was 86%-106%.
Error rates of rapid-single-flux-quantum (RSFQ) shift register memories were investigated using a high-speed error-rate measurement system in order to demonstrate their reliability and stability. We designed and implemented an 8 times 8-bit shift register memory using the CONNECT cell library and the SRL 2.5 kA/cm2Nb process. The total number of Josephson junctions including the test system is 4184, and the circuit area is 2.1 mm times 3.2 mm. We measured the error rates of every storage node by reading out the data 216times at the clock frequency of 16 GHz. The measured error rates were lower than 10-10with DC bias margin better than plusmn5%.
With Moore's law approaching its physical limits, low-temperature computing technology is ushering in unprecedented development opportunities. Rapid single-flux-quantum (RSFQ) circuit technology is currently the most mature superconducting integrated circuit technology. Based on the current fabrication process, we propose an 8-bit bit-parallel RSFQ microprocessor. The proposed microprocessor processes 8-bit data each clock cycle. Ten different instructions are executed. The microprocessor mainly consists of an on-chip instruction memory, two data registers, an instruction decoder, an 8-bit bit-parallel arithmetic logic unit, and a program counter. The microprocessor contains 7702 JJs (based on the Open Dataset of CONNECT Cell Library for AIST ADP2) without considering splitters, Josephson transmission lines, and passive transmission lines. We perform a logic-level simulation of the proposed microprocessor. The simulation results show correct operation with a target frequency of 16.7 GHz.
Rapid single flux quantum (RSFQ) 512-bit and 1024-bit shift registers have been demonstrated. These are the longest superconducting shift registers reported to date, employing 1045 and 2069 Josephson junctions, respectively. The circuit functionality has been confirmed with dc bias margins of +or-23% and +or-14% for the 512-bit and the 1024-bit shift registers, respectively. The 512-bit shift register has been tested to 20 GHz and 1024-bit register to 19 GHz using an external clock trigger with relative delay measurements at single and double SFQ clock frequencies. The shift registers with the same design have been used for successful implementation of the acquisition shift register (ASR) memory for the projected transient digitizer. These shift registers have the ability to acquire data at high speeds (gigahertz range), statically hold the acquired data, and then read-out the data into conventional room-temperature electronics at low speeds (megahertz range). A 32-bit ASR has been tested up to 18 GHz (the limit of our test setup), and a 1024-bit ASR-up to 16 GHz of acquisition rates, both at 33 MHz read-out frequency. Total power dissipation is about 1 mW for the 1024-bit circuit. The chips are fabricated using Hypres' Nb/AlO/sub x//Nb process with a junction critical current density of 1.0 kA/cm/sup 2/.>