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APL Materials

Pure single-photon emission from an InGaN/GaN quantum dot

Mark Holmes, Tongtong Zhu, Fabien C P Massabuau, John C. Jarman, Rachel A. Oliver, Yasuhiko Arakawa

Published Jun 1, 2021• 19 citations
Publisher

Abstract

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.

DOI
10.1063/5.0049488

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•Jan 1, 2020•0 citations
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.
We have demonstrated highly pure single-photon emissions from an InAs/InP quantum dot at the wavelength of 1.5 μm. By applying quasi-resonant excitation, one exciton is deterministically generated in an excited state, which then relaxes to the exciton ground state before recombining to emit a single photon. The photon-correlation function of the emission from the exciton ground state exhibits a record g(2)(0) value of (4.4 ± 0.2) × 10−4 measured using high-performance super-conducting single-photon detectors, without any background subtraction. This single-photon source with extremely low multi-photon emission probability paves the way to realize long distance quantum key distribution and low error-rate quantum computation.
Abstract The temperature dependent single photon emission statistics of interface-fluctuation GaN quantum dots are reported. Quantum light emission is confirmed at temperatures up to ~77 K, by which point the background emission degrades the emission purity and results in a measured g(2) (0) in excess of 0.5. A discussion on the extent of the background contamination is also given through comparison to extensive data taken under various ambient and experimental conditions, revealing that the quantum dots themselves are emitting single photons with high purity.
Quantum light and in particular single photons have become essential resources for a growing number of quantum applications including quantum computing, quantum key distribution and quantum metrology. Solid-state atomlike systems such as semiconductor quantum dots and color defects in crystals have become the hallmark of highly pure single photon emitters in the past two decades. A particular interest has been developed in nanocrystal quantum dots (NQDs) and color centers in diamond as potential compact room-temperature emitters. There are however several challenges that inhibit the use of such sources in current technologies including low photon extraction efficiency, low emission rates and relatively low single photon purities. In this work we will review our efforts in overcoming these technical difficulties using several complementary methods including designing several nanoantenna devices that enhance the directionality and emission rate of the nanoemitter. In addition, we developed several temporal heralding techniques to overcome the hurdle of low single photon purity in NQDs in an effort to produce a highly pure, bright and efficient single photon source on-chip.
Efficient, high rate photon sources with high single-photon purity are essential ingredients for quantum technologies. Single-photon sources based on solid state emitters such as quantum dots are very advantageous for integrated photonic circuits, but they can suffer from a high two-photon emission probability, which in cases of noncryogenic environment cannot be spectrally filtered. Here we propose two temporal purification-by-heralding methods for using a two-photon emission process to yield highly pure and efficient single-photon emission, bypassing the inherent problem of spectrally overlapping biphoton emission at elevated temperatures. We experimentally emulate their feasibility on the emission from a single nanocrystal quantum dot at room temperature, exhibiting single-photon purities exceeding 99.5%, without a significant loss of single-photon efficiency. By utilizing these methods with commercially available components, nanocrystal quantum dots can be made realistic high-quality room-temperature sources for single photons. These approaches can also be applied for any indeterministic source of spectrally broadband photon pairs.
Semiconductor quantum dots emitting in the telecommunication O- and C-bands are promising candidates as single-photon sources for fiber-based quantum communication. In this work, we show how coherent quasi-resonant and phonon-assisted excitation help reveal the intrinsic optical properties of InAs quantum dots embedded in relaxed InGaAs matrices on top of metamorphic InGaAs layers for achieving emission in the telecom bands. By systematically comparing excitation schemes, we separate excitation-induced effects from intrinsic emitter properties. This allows us to observe linewidths as narrow as 21 μμμeV, the disappearance of slow decay channels, and single-photon purity reaching second-order autocorrelation values in the order of 10−210^{-2}10−2. Photoluminescence excitation reveals higher excited states, enabling coherent control of trion transitions and the observation of Rabi-like oscillations in both telecom bands. These results confirm the promising potential of these quantum dots for applications in quantum technologies.
The advent of quantum computation promises exciting advances, not only in fields like medicine and metrology, but many industries that rely on parameter-heavy calculations or simulation of molecular interaction. At the same time Shor's algorithm for quantum computers presents a threat to current asymmetric encryption protocols used in everyday communication. Flying qubits, i.e. single-photons, can help mitigate this problem via quantum key distribution, which is insusceptible to an increase in computational power. In addition, they can link quantum computers, forming a quantum network, so that quantum states can be transmitted between them. Sources of flying qubits need good performance in key metrics like single--photon purity, repetition rate, indistinguishability and brightness to become useful in these applications. They should ideally emit strongly entangled pairs of photons and be matched to other quantum technologies in bandwidth and emission energy. In this thesis the emission characteristics of single epitaxial quantum dots, the single-photon source of our choice, are investigated. Strongly entangled photon-pair emission is demonstrated for three different quantum-dot systems: InAsP quantum dots embedded in nanowire waveguides, suitable for integration into photonic circuits, show emission of single photons and entangled photon pairs under non-resonant and quasi-resonant excitation. Violation of Bell's inequality is demonstrated using the traditional set of polarization angles. GaAs quantum dots grown in droplet--etched nanoholes are tested with two resonant excitation methods: Using resonance fluorescence, near-unity indistinguishability and re-excitation limited single-photon purity, albeit not simultaneously with laser-inherited bandwidth, are measured. Using two-photon resonant excitation we set a new standard for single-photon purity, can generate pairs of entangled photons but suffer from reduced indistinguishability. In addition, nanofabrication of paraboloid shaped reflectors for enhanced extraction efficiency of photons and strain-tuning of the emission energy into resonance with the 87Rb D1-line are demonstrated. Strain-tunable InAs quantum dots emitting in the telecom C-band are investigated under above-band excitation and two different resonant two-photon excitation techniques, all of which cause pure single-photon emission. Using the robust phonon-assisted two-photon excitation technique, close-to ideal entangled photon-pair emission is demonstrated. For many of these findings photon arrival times were recorded over many hours with temporal precision on the order of 10 ps. We have developed a user-friendly, yet versatile piece of software in order to extract as much information as possible from this vast amount of data. These results will facilitate integration of quantum dot based single- and entangled-photon sources into future quantum networks and quantum key distribution systems.