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Applied Physics Letters

Single-photon emission at 1.5 μ m from an InAs/InP quantum dot with highly suppressed multi-photon emission probabilities

Tomoyuki MIYAZAWA, K. Takemoto, Y. Nambu, Shigehito Miki, Taro Yamashita, Hirotaka Terai, Mikio Fujiwara, Masahide Sasaki, Yoshiki Sakuma, Motomu Takatsu, Tsuyoshi Yamamoto, Yasuhiko Arakawa

Published Sep 26, 2016• 114 citations
Publisher

Abstract

We have demonstrated highly pure single-photon emissions from an InAs/InP quantum dot at the wavelength of 1.5 μm. By applying quasi-resonant excitation, one exciton is deterministically generated in an excited state, which then relaxes to the exciton ground state before recombining to emit a single photon. The photon-correlation function of the emission from the exciton ground state exhibits a record g(2)(0) value of (4.4 ± 0.2) × 10−4 measured using high-performance super-conducting single-photon detectors, without any background subtraction. This single-photon source with extremely low multi-photon emission probability paves the way to realize long distance quantum key distribution and low error-rate quantum computation.

DOI
10.1063/1.4961888

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We have demonstrated highly pure single-photon emissions from an InAs/InP quantum dot at the wavelength of 1.5 μm. By applying quasi-resonant excitation, one exciton is deterministically generated in an excited state, which then relaxes to the exciton ground state before recombining to emit a single photon. The photon-correlation function of the emission from the exciton ground state exhibits a record g(2)(0) value of (4.4 ± 0.2) × 10−4 measured using high-performance super-conducting single-photon detectors, without any background subtraction. This single-photon source with extremely low multi-photon emission probability paves the way to realize long distance quantum key distribution and low error-rate quantum computation.
We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based secure communication technologies.
We first succeeded in generating single-photon pulses in the C-band (1.55-µm band: the highest transmittance in optical telecommunication bands) from a single InAs/InP quantum dot. The quantum dot with 1546.1-nm exciton emission was prepared by controlling the growth conditions. A well-designed mesa structure presented efficient injection of the emitted photons into a single-mode optical fiber. A Hanbury-Brown and Twiss measurement has proved that the photons through the fiber were single photons. We also performed to transmit single-photon pulses through 30-km optical fiber. This preliminary trial is a milestone toward quantum telecommunication using ideal single photons.
Summary form only given. A realization of time-bin entanglement obtained from quantum dots would join the strength of long distance transmission that characterizes this type of entanglement with the single photon state purity of the quantum dot emission. Compared with polarization entanglement from quantum dots this scheme does not require elimination of the fine structure splitting responsible for partial distinguishability of the quantum dot cascades [1].Here, we present our results on coherent and resonant excitation of quantum dots, creation of photon pairs, scattering free emission and measurement of the high purity of the emitted photons [2, 3]. In addition, we will show our measurements of the generated time-bin entanglement. To excite a single quantum dot we performed two-photon resonant excitation of the biexciton state. Here, we exploited the biexciton binding energy in order to use the laser light which was not resonant to any photon emitted from the quantum dot (Fig. 1a). Our measurements were performed on a single self-assembled InAs/GaAs quantum dot. We confirmed the resonant nature of the excitation by observing Rabi oscillations (Fig. 1b). Additionally, we performed Ramsey interference measurement and determined the coherence time of the ground-biexciton state superposition. These measurements show that we can coherently transfer the phase of the excitation laser onto the quantum dot system, a necessary requirement to obtain time-bin entanglement.To test the statistics of the emitted state we measured the auto-correlation of the emitted photons (Fig. 3c). Here, the auto-correlation parameter at zero delay was measured to be 0.012(1) without and 0.0073(8) with background subtraction. In addition, we performed a measurement to characterize the state emitted from a quantum dot using a witness-based criterion described in [4]. With this measurement we experimentally confirmed that the resonantly excited quantum dot emits a non-Gaussian state of light (Fig. 1d). This measurement is the first of this nature ever performed on a semiconductor single photon emitter.
Highly efficient single photon sources are important building blocks for optical quantum information processing. For practical use and long-distance quantum communication, single photons should have fiber-compatible telecom wavelengths. In addition, most quantum communication applications require high degree of indistinguishability of single photons, such that they exhibit interference on a beam splitter. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem in particular at telecom wavelengths. We demonstrate a telecom wavelength source of indistinguishable single photons using an InAs/InP quantum dot in a nanophotonic cavity. To obtain the efficient single quantum dot emission, we employ the higher order mode in L3 photonic crystal cavity that shows a nearly Gaussian transverse mode profile and results in out-coupling efficiency exceeding 46 {\\%} and unusual bright single quantum dot emission exceeding 1.5 million counts per second at a detector. We also observe Purcell enhanced spontaneous emission rate as large as 4 and high linear polarization ratio of 0.96 for the coupled dots. Using this source, we generate high purity single photons at 1.3 ??m wavelength and demonstrate the indistinguishable nature of the emission using a two-photon interference measurement.
We report the distribution of a cryptographic key, secure from photon number splitting attacks, over 35km of optical fiber using single photons from an InAs quantum dot emitting ∼1.3μm in a pillar microcavity. Using below GaAs-bandgap optical excitation, we demonstrate suppression of multiphoton emission to 10% of the Poissonian level without detector dark count subtraction. The source is incorporated into a phase encoded interferometric scheme implementing the BB84 protocol for key distribution over standard telecommunication optical fiber. We show a transmission distance advantage over that possible with (length-optimized) uniform intensity weak coherent pulses at 1310nm in the same system.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.